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Dive into the research topics where Elliot J. Fuller is active.

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Featured researches published by Elliot J. Fuller.


Applied Physics Letters | 2013

Quantitative Kelvin probe force microscopy of current-carrying devices

Elliot J. Fuller; Deng Pan; Brad L. Corso; O. Tolga Gul; Jose R. Gomez; Philip G. Collins

Kelvin probe force microscopy (KPFM) should be a key tool for characterizing the device physics of nanoscale electronics because it can directly image electrostatic potentials. In practice, though, distant connective electrodes interfere with accurate KPFM potential measurements and compromise its applicability. A parameterized KPFM technique described here determines these influences empirically during imaging, so that accurate potential profiles can be deduced from arbitrary device geometries without additional modeling. The technique is demonstrated on current-carrying single-walled carbon nanotubes (SWNTs), directly resolving average resistances per unit length of 70 kΩ/μm in semimetallic SWNTs and 200 kΩ/μm in semiconducting SWNTs.


Nano Letters | 2015

One-dimensional Poole-Frenkel conduction in the single defect limit

Elliot J. Fuller; Deng Pan; Brad L. Corso; O. Tolga Gul; Philip G. Collins

A single point defect surrounded on either side by quasi-ballistic, semimetallic carbon nanotube is a nearly ideal system for investigating disorder in one-dimensional (1D) conductors and comparing experiment to theory. Here, individual single-walled nanotubes (SWNTs) are investigated before and after the incorporation of single point defects. Transport and local Kelvin Probe force microscopy independently demonstrate high-resistance depletion regions over 1.0 μm wide surrounding one point defect in semimetallic SWNTs. Transport measurements show that conductance through such wide depletion regions occurs via a modified, 1D version of Poole-Frenkel field-assisted emission. Given the breadth of theory dedicated to the possible effects of disorder in 1D systems, it is surprising that a Poole-Frenkel mechanism appears to describe defect scattering and resistance in this semimetallic system.


Proceedings of SPIE | 2013

Electronic Effects of Defects in One-Dimensional Channels

Elliot J. Fuller; Deng Pan; Brad L. Corso; O. Tolga Gul; Philip G. Collins

As electronic devices shrink to the one-dimensional limit, unusual device physics can result, even at room temperature. Nanoscale conductors like single-walled carbon nanotubes (SWNTs) are particularly useful tools for experimentally investigating these effects. Our characterization of point defects in SWNTs has focused on these electronic consequences. A single scattering site in an otherwise quasi-ballistic SWNT introduces resistance, transconductance, and chemical sensitivity, and here we investigate these contributions using a combination of transport and scanning probe techniques. The transport measurements determine the two-terminal contributions over a wide range of bias, temperature, and environmental conditions, while the scanning probe work provides complementary confirmation that the effects originate at a particular site along the conduction path in a SWNT. Together, the combination proves that single point defects behave like scattering barriers having Poole-Frenkel transport characteristics. The Poole-Frenkel barriers have heights of 10 – 30 meV and gate-dependent widths that grow as large as 1 μm due to the uniquely poor screening in one dimension. Poole-Frenkel characteristics suggest that the barriers contain at least one localized electronic state, and that this state primarily contributes to conduction under high bias or high temperature conditions. Because these localized states vary from one device to another, we hypothesize that each might be unique to a particular defect’s chemical type.


Physical Review B | 2012

Distinguishing carbon nanotube defect chemistry using scanning gate spectroscopy

Steven R. Hunt; Elliot J. Fuller; Brad L. Corso; Philip G. Collins


Physical Review B | 2014

Mean free paths in single-walled carbon nanotubes measured by Kelvin probe force microscopy

Elliot J. Fuller; Deng Pan; Brad L. Corso; O. Tolga Gul; Philip G. Collins


Bulletin of the American Physical Society | 2018

Floating gate memory based on ion-insertion electrodes for low-voltage analog computing

Elliot J. Fuller; Scott T Keene; Zhongrui Wang; Sapan Agarwal; François Léonard; Yang Joshua; Matthew Marinella; Alberto Salleo; Albert Alec Talin


Archive | 2016

Neuromorphic Algorithm Acceleration with Resistive Memory NanoCrossbars.

Matthew Marinella; Sapan Agarwal; Elliot J. Fuller; Albert Alec Talin; Farid El Gabaly Marquez; Robin B. Jacobs-Gedrim; David Russell Hughart; Ronald S. Goeke; Alexander H. Hsia; Richard Louis Schiek; Steven J. Plimpton; Conrad D. James


Archive | 2016

Device to System Modeling Framework to Enable a 10 fJ per Instruction Neuromorphic Computer.

Matthew Marinella; Sapan Agarwal; Albert Alec Talin; Frederick B. McCormick; Steven J. Plimpton; Farid El Gabaly Marquez; Elliot J. Fuller; Robin B. Jacobs-Gedrim; David Russell Hughart; Ronald S. Goeke; Alexander H. Hsia


Archive | 2016

Lithium ion synaptic transistor for analog computation (LISTA).

Albert Alec Talin; Elliot J. Fuller; Farid El Gabaly Marquez; Matthew Marinella; Sapan Agarwal; François Léonard


Archive | 2016

in operando Kelvin probe force microscopy of solid-state batteries.

Elliot J. Fuller; Farid El Gabaly Marquez; François Léonard; Albert Alec Talin

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Brad L. Corso

University of California

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Albert Alec Talin

Sandia National Laboratories

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Deng Pan

University of California

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O. Tolga Gul

University of California

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Sapan Agarwal

Sandia National Laboratories

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François Léonard

Sandia National Laboratories

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Alexander H. Hsia

Sandia National Laboratories

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