Emily L. Warren

Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH3 surface preparation

Antiphase-domain (APD) free GaP films were grown on Si(100) substrates prepared by annealing under dilute AsH3 in situ in an MOCVD reactor. LEED and AES surface analysis of Si(100) surfaces prepared by this treatment show that AsH3 etching quickly removes O and C contaminants at a relatively low temperature (690–740 °C), and creates a single-domain “A-type” As/Si surface reconstruction. The resulting GaP epilayers grown at the same temperature are APD-free, and could thereby serve as templates for direct growth of III-V semiconductors on Si. This single chamber process has a low thermal budget, and can enable heteroepitaxial integration of III-Vs and Si at an industrial scale.

Implementation of tunneling pasivated contacts into industrially relevant n-Cz Si solar cells

We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 <; 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.

Ordered Silicon Microwire Arrays Grown from Substrates Patterned Using Imprint Lithography and Electrodeposition

Silicon microwires grown by the vapor-liquid-solid process have attracted a great deal of interest as potential light absorbers for solar energy conversion. However, the research-scale techniques that have been demonstrated to produce ordered arrays of micro and nanowires may not be optimal for use as high-throughput processes needed for large-scale manufacturing. Herein we demonstrate the use of microimprint lithography to fabricate patterned templates for the confinement of an electrodeposited Cu catalyst for the vapor-liquid-solid (VLS) growth of Si microwires. A reusable polydimethylsiloxane stamp was used to pattern holes in silica sol-gels on silicon substrates, and the Cu catalyst was electrodeposited into the holes. Ordered arrays of crystalline p-type Si microwires were grown across the sol-gel-patterned substrates with materials quality and performance comparable to microwires fabricated with high-purity metal catalysts and cleanroom processing.

Investigation of GaP/Si heteroepitaxy on MOCVD prepared Si(100) surfaces

Antiphase-domain (APD) free growth of GaP on Si has been achieved on Si surfaces prepared in situ by etching with AsH3. The pre-nucleation AsH3 etching removes O and C contaminants at a relatively low temperature, and creates a single-domain arsenic-terminated Si surface. The As-As dimer rows are all parallel to the step edges, and subsequent GaP growth by MOCVD retains this dimerization orientation. Both LEED and TEM indicate that the resulting epilayer is APD-free, and could thereby serve as a template for III-V/Si multijunction solar cells.

Maximizing tandem solar cell power extraction using a three-terminal design

Tandem or multijunction solar cells can greatly increase the efficiency of solar energy conversion by absorbing different energies of the incident solar illumination in semiconductors with different band-gaps, which can operate more efficiently than a single absorber. Many different designs of tandem cells based on high efficiency top cells and Si bottom cells have been proposed, and there is ongoing debate as to whether the sub-cells should be wired in series (to create a tandem device with two terminals) or operated independently (four terminals). An alternative cell configuration that combines some of the strengths of both is a three-terminal device consisting of a top cell optically in series with a modified interdigitated back contact (IBC) Si cell featuring a conductive top contact. Such a configuration can enable improved energy yield while only requiring external wiring on the front and back of the solar cell stack. In this paper, we investigate the operation of three terminal tandems in detail using technology computer aided design (TCAD) device physics simulations. Using III–V top cells as an example case, we show how the addition of a third terminal can deliver comparable power output to a four terminal device, and substantially more power than a two-terminal device, while also enabling power injection and extraction between the two sub-circuits under a variety of spectral conditions.

Single crystal growth and phase stability of photovoltaic grade ZnSiP2 by flux technique

ZnSiP2 is a potential optoelectronic material with possible application in lasers, LEDs, photonic integrated circuits, and photovoltaics. The development of ZnSiP2 as a photovoltaic material could address the current technological challenge of implementing a monolithic top cell on silicon for tandem photovoltaics. In this work we present a detailed description of the growth of ZnSiP2 single crystals, which has enabled thorough optoelectronic characterization. A flux growth technique was used, under various conditions, to grow ZnSiP2 single crystals in Zn solution. The results of these growth experiments, along with analysis of previously determined phase diagrams, show that three secondary phases form as a result of the Zn flux growth technique: Zn3P2, Si, and the remaining Zn flux. Potential reasons for the formation of these particular phases are discussed, but their presence is found to be non-detrimental, and they can easily be removed. The resulting single crystals are high purity and enable the characterization of the fundamental optoelectronic properties of ZnSiP2.

Yield analysis and comparison of GaInP/Si and GaInP/GaAs multi-terminal tandem solar cells

We present a yield analysis of tandem devices consisting of GaInP top cells on Si or GaAs bottom cells with different terminal configurations. Inputs are the I-V and external quantum efficiency of the individual subcells and the irradiance-dependent module temperature of the bottom cell. Our model calculates the temperature of the tandem module by taking into account the performance, spectral working range and luminescent coupling of the different tandem devices, enabling an irradiance- and weather-dependent yield analysis for these modules. We apply the model to compare two types of two junction devices, a GaInP/GaAs monolithically grown tandem device, and a GaInP top cell stacked on a Si bottom cell, the present two best dual junction devices. When the subcells are series connected both technologies perform equally well. The performance of the GaInP/Si can be significantly improved relatively by 5.8% using 3-terminal (3T) devices with a back-contacted bottom cell instead of a 2T configuration, showing a...

Energy conversion properties of ZnSiP 2 , a lattice-matched material for silicon-based tandem photovoltaics

ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.

Study of nickel silicide as a copper diffusion barrier in monocrystalline silicon solar cells

NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

Selective area growth of GaAs on Si patterned using nanoimprint lithography

Heteroepitaxial selective area growth (SAG) of GaAs on patterned Si substrates is a potential low-cost approach to integrate III-V and Si materials for tandem or multijunction solar cells. The use of nanoscale openings in a dielectric material can minimize nucleation-related defects and allow thinner buffer layers to be used to accommodate lattice mismatch between Si and an epitaxial III-V layer. For photovoltaic applications, the cost of patterning and growth, as well as the impact on the performance of the Si bottom cell must be considered. We present preliminary results on the use of soft nanoimprint lithography (SNIL) to create patterned nucleation templates for the heteroepitaxial SAG of GaAs on Si. We demonstrate that SNIL patterning of passivating layers on the Si substrate improves measured minority carrier properties relative to unprotected Si. Cost modeling of the SNIL process shows that adding a patterning step only adds a minor contribution to the overall cost of a tandem III-V/Si solar cell, and can enable significant savings if it enables thinner buffer layers.