Brenden R. Ortiz

Material descriptors for predicting thermoelectric performance

In the context of materials design and high-throughput computational searches for new thermoelectric materials, the need to compute electron and phonon transport properties renders direct assessment of the thermoelectric figure of merit (zT) for large numbers of compounds untenable. Here we develop a semi-empirical approach rooted in first-principles calculations that allows relatively simple computational assessment of the intrinsic bulk material properties which govern zT. These include carrier mobility, effective mass, and lattice thermal conductivity, which combine to form a semi-empirical metric (descriptor) termed βSE. We assess the predictive power of βSE against a range of known thermoelectric materials, as well as demonstrate its use in high-throughput screening for promising candidate materials.

Potential for high thermoelectric performance in n-type Zintl compounds: a case study of Ba doped KAlSb4

High-throughput calculations (first-principles density functional theory and semi-empirical transport models) have the potential to guide the discovery of new thermoelectric materials. Herein we have computationally assessed the potential for thermoelectric performance of 145 complex Zintl pnictides. Of the 145 Zintl compounds assessed, 17% show promising n-type transport properties, compared with only 6% showing promising p-type transport. We predict that n-type Zintl compounds should exhibit high mobility μn while maintaining the low thermal conductivity κL typical of Zintl phases. Thus, not only do candidate n-type Zintls outnumber their p-type counterparts, but they may also exhibit improved thermoelectric performance. From the computational search, we have selected n-type KAlSb4 as a promising thermoelectric material. Synthesis and characterization of polycrystalline KAlSb4 reveals non-degenerate n-type transport. With Ba substitution, the carrier concentration is tuned between 1018 and 1019 e− cm−3 with a maximum Ba solubility of 0.7% on the K site. High temperature transport measurements confirm a high μn (50 cm2 V−1 s−1) coupled with a near minimum κL (0.5 W m−1 K−1) at 370 °C. Together, these properties yield a zT of 0.7 at 370 °C for the composition K0.99Ba0.01AlSb4. Based on the theoretical predictions and subsequent experimental validation, we find significant motivation for the exploration of n-type thermoelectric performance in other Zintl pnictides.

Thermoelectric properties of bromine filled CoSb3 skutterudite

Historically, the improved thermoelectric performance of skutterudite compounds has largely been driven by the incorporation of electropositive donors on interstitial sites. These “rattlers” serve to optimize both electronic and thermal properties by tuning the carrier concentration and scattering phonons. In this work, we show that interstitial bromine can be incorporated into CoSb3 and assess the impact on electronic and thermal transport. In contrast to prior high pressure syntheses with iodine, interstitial bromine incorporation is achieved at ambient pressure. Transport properties are stable up to at least 375 °C. Bromine serves as an electronegative acceptor and can induce degenerate (>5 × 1019 cm−3) hole densities. In contrast to other p-type skutterudite compositions, bromine preserves the intrinsically high hole mobility of CoSb3 while significantly reducing the lattice thermal conductivity. The development of a stable p-type dopant for the interstitial filler site enables the development of skutterudites with both donor and acceptor interstitials to maximize phonon scattering while maintaining the high mobility of CoSb3.

Development of ZnSiP

A major technological challenge in photovoltaics is the implementation of a lattice matched optically efficient material to be used in conjunction with silicon for tandem photovoltaics. Detailed balance calculations predict an increase in efficiency of up to 12 percentage points for a tandem cell compared with single junction silicon. Given that the III-V materials currently hold world record efficiencies, both for single and multijunction cells, it would be transformative to develop a material that has similar properties to the III-Vs which is also lattice matched to silicon. The II-IV-V2 chalcopyrites are a promising class of materials that could satisfy these criteria. ZnSiP2 in particular is known to have a bandgap of ~2 eV, a lattice mismatch with silicon of 0.5%, and is earth abundant. Its direct bandgap is symmetry-forbidden. We have grown single crystals of ZnSiP2 by a flux growth technique. Structure and phase purity have been confirmed by X-ray diffraction and transmission electron microscopy. Optical measurements, along with a calculation of the absorption spectrum, confirm the ~2 eV bandgap. Because of its structural similarity to both crystalline silicon and the III-Vs, ZnSiP2 is expected to have good optoelectronic performance.

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The controlled decomposition of metastable alloys is an attractive route to form nanostructured thermoelectric materials with reduced thermal conductivity. The ternary SnTe–MnTe and SnTe–SnSe heterostructural alloys have been demonstrated as promising materials for thermoelectric applications. In this work, the quaternary Sn1−yMnyTe1−xSex phase space serves as a relevant model system to explore how a combination of computational and combinatorial-growth methods can be used to study equilibrium and non-equilibrium solubility limits. Results from first principle calculations indicate low equilibrium solubility for x,y 0.2. These theoretical and experimental results were used to guide the bulk synthesis of metastable alloys. The ability to reproduce the non-equilibrium solubility levels in bulk materials indicates that such theoretical calculations and combinatorial growth can inform bulk synthetic routes. Further, the large difference between equilibrium and non-equilibrium solubility limits in Sn1−yMnyTe1−xSex indicates these metastable alloys are attractive in terms of nano-precipitate formation for potential thermoelectric applications.

for Si-Based Tandem Solar Cells

Recent, and somewhat surprising, successful n-type doping of Mg3Sb2 was the key to realizing high thermoelectric performance in this material. Herein, we use first-principles defect calculations to investigate different extrinsic n-type doping strategies for Mg3Sb2 and to reveal general chemical trends in terms of dopant solubilities and maximal achievable electron concentrations. In agreement with experiments, we find that Sb substitution is an effective doping strategy, with Se and Te doping predicted to yield up to ∼8 × 1019 cm−3 electrons. However, we also find that Mg substitution with trivalent (or higher) cations can be even more effective; in particular, the predicted highest achievable electron concentration (∼5 × 1020 cm−3) with La as an extrinsic dopant exceeds that of Se and Te doping. Interstitial doping (Li, Zn, Cu, Be) is found to be largely ineffective either due to self-compensation (Li) or high formation energy (Zn, Cu, Be). Our results offer La as an alternative dopant to Te and Se and reinforce the need for careful phase boundary mapping in achieving high electron concentrations in Mg3Sb2.

Solubility limits in quaternary SnTe-based alloys

ZnSiP2 is a potential optoelectronic material with possible application in lasers, LEDs, photonic integrated circuits, and photovoltaics. The development of ZnSiP2 as a photovoltaic material could address the current technological challenge of implementing a monolithic top cell on silicon for tandem photovoltaics. In this work we present a detailed description of the growth of ZnSiP2 single crystals, which has enabled thorough optoelectronic characterization. A flux growth technique was used, under various conditions, to grow ZnSiP2 single crystals in Zn solution. The results of these growth experiments, along with analysis of previously determined phase diagrams, show that three secondary phases form as a result of the Zn flux growth technique: Zn3P2, Si, and the remaining Zn flux. Potential reasons for the formation of these particular phases are discussed, but their presence is found to be non-detrimental, and they can easily be removed. The resulting single crystals are high purity and enable the characterization of the fundamental optoelectronic properties of ZnSiP2.

Investigation of n-type doping strategies for Mg3Sb2

Emerging photovoltaic materials need to prove their viability by demonstrating excellent electronic properties. In ternary and multinary semiconductors, disorder and off-stoichiometry often cause defects that limit the potential for high-efficiency solar cells. Here we report on Zn-rich ZnSnN2 (Zn/(Zn + Sn) = 0.67) photoluminescence, high-resolution X-ray diffraction, and electronic structure calculations based on Monte-Carlo structural models. The mutual compensation of Zn excess and O incorporation affords a desirable reduction of the otherwise degenerate n-type doping, but also leads to a strongly off-stoichiometric and disordered atomic structure. It is therefore remarkable that we observe only near-edge photoluminescence from well-resolved excitons and shallow donors and acceptors. Based on first principles calculations, this result is explained by the mutual passivation of ZnSn and ON defects that renders both electronically benign. The calculated bandgaps range between 1.4 and 1.8 eV, depending on the degree of non-equilibrium disorder. The experimentally determined value of 1.5 eV in post-deposition annealed samples falls within this interval, indicating that further bandgap engineering by disorder control should be feasible via appropriate annealing protocols.

Single crystal growth and phase stability of photovoltaic grade ZnSiP2 by flux technique

The study of thermoelectric materials spans condensed matter physics, materials science and engineering, and solid-state chemistry. The diversity of the participants and the inherent complexity of the topic mean that it is difficult, if not impossible, for a researcher to be fluent in all aspects of the field. This review, which grew out of a one-week summer school for graduate students, aims to provide an introduction and practical guidance for selected conceptual, synthetic, and characterization approaches and to craft a common umbrella of language, theory, and experimental practice for those engaged in the field of thermoelectric materials. This review does not attempt to cover all major aspects of thermoelectric materials research or review state-of-the-art thermoelectric materials. Rather, the topics discussed herein reflect the expertise and experience of the authors. We begin by discussing a universal approach to modeling electronic transport using Landauer theory. The core sections of the review are focused on bulk inorganic materials and include a discussion of effective strategies for powder and single crystal synthesis, the use of national synchrotron sources to characterize crystalline materials, error analysis, and modeling of transport data using an effective mass model, and characterization of phonon behavior using inelastic neutron scattering and ultrasonic speed of sound measurements. The final core section discusses the challenges faced when synthesizing carbon-based samples and the measuring or interpretation of their transport properties. We conclude this review with a brief discussion of some of the grand challenges and opportunities that remain to be addressed in the study of thermoelectrics.

Exciton photoluminescence and benign defect complex formation in zinc tin nitride

ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.