Eng Huat Toh

FINFET WITH STRESSORS

Self-aligned contact for replacement metal gate and silicide last processes

Ldmos with improved breakdown voltage

NANO-ELECTRO-MECHANICAL SYSTEM (NEMS) STRUCTURES ON BULK SUBSTRATES

TRANSISTOR DEVICES HAVING AN ANTI-FUSE CONFIGURATION AND METHODS OF FORMING THE SAME

MEMORY CELL WITH DECOUPLED CHANNELS

FINFET WITH ISOLATION

COMPACT RRAM DEVICE AND METHODS OF MAKING SAME

DEEP DEPLETED CHANNEL MOSFET WITH MINIMIZED DOPANT FLUCTUATION AND DIFFUSION LEVELS

BURIED CHANNEL FINFET SONOS WITH IMPROVED P/E CYCLING ENDURANCE