Eric Baudelot
Siemens
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Featured researches published by Eric Baudelot.
international symposium on power semiconductor devices and ic s | 2000
Peter Friedrichs; Heinz Mitlehner; Karl Otto Dohnke; Dethard Peters; Reinhold Schörner; Ulrich Weinert; Eric Baudelot; Dietrich Stephani
Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. In this paper, MOSFETs and JFETs capable to block 1800 V with a specific on-resistance of 47 m/spl Omega/ cm/sup 2/ and 14.5 m/spl Omega/ cm/sup 2/, resp., are discussed. However, there are additional advantages making SiC devices attractive for the system designer. The authors present fast recovery of the 6H-SiC MOSFET reverse diode (Q/sub rr/ 30 nC, t/sub rr/ 20 ns) and fast switching as well as short circuit capability (1 ms) of vertical VJFETs. Finally, a short outlook to future SiC switching devices is given.
Archive | 2001
Eric Baudelot; Manfred Bruckmann; Heinz Mitlehner; Dietrich Stephani; Benno Weis
Archive | 2000
Eric Baudelot; Manfred Bruckmann; Heinz Mitlehner; Benno Weis
Archive | 2002
Eric Baudelot; Albrecht Donat; Bernhard Foecking; Hubert Schierling; Ralf Schweigert; Günter Schwesig
Archive | 2002
Eric Baudelot; Albrecht Donat; Bernhard Foecking; Hubert Schierling; Ralf Schweigert; Günter Schwesig
Archive | 2001
Eric Baudelot; Manfred Bruckmann; Heinz Mitlehner; Benno Weis
Archive | 2001
Eric Baudelot; Manfred Bruckmann; Heinz Mitlehner; Benno Weis
Archive | 1998
Eric Baudelot; Manfred Bruckmann; Heinz Mitlehner; Benno Weis
Archive | 2006
Eric Baudelot
Archive | 1998
Eric Baudelot; Manfred Bruckmann; Heinz Mitlehner; Benno Weis
