Eric Dulkeith

Group index and group velocity dispersion in silicon-on-insulator photonic wires

We determine group index and group velocity dispersion (GVD) of SOI single-mode strip waveguides (photonic wires) with 525x226nm cross-section over the entire telecommunication bandwidth by employing an integrated Mach-Zehnder interferometer. The measured GVD yields 4400 ps/(nm*km) at 1550 nm and exceeds that of standard single-mode fibers by almost three orders of magnitude. In the photonic wires the GVD is mainly determined by strong light confinement rather than by material dispersion. Our results indicate that despite this high GVD, dispersion-induced signal impairment is negligible in photonic circuits for data rates up to 100-Gb/s and total waveguide lengths as long as about 1 meter. The measured group index and GVD are used as benchmarks to compare model calculations originating from four different theoretical methods.

Self-phase-modulation in submicron silicon-on-insulator photonic wires

We measure the transmission of ps-pulses through silicon-on-insulator submicron waveguides for excitation wavelengths between 1400 and 1650 nm and peak powers covering four orders of magnitude. Self-phase-modulation induced spectral broadening is found to be significant at coupled peak powers of even a few tens of mW. The nonlinear-index coefficient, extracted from the experimental data, is estimated as n(2) ~ 5*10(-18) m(2)/W at 1500 nm. The experimental results show good agreement with model calculations that take into account nonlinear phase shift, first- and second order dispersion, mode confinement, frequency dispersion of n(2), and dynamics of two-photon-absorption-generated free carriers. Comparison with theory indicates that an observed twofold increase of spectral broadening between 1400 and 1650 nm can be assigned to the dispersion of n(2) as well as first order- rather than second-order dispersion effects. The analysis of pulse broadening, spectral shift and transmission saturation allows estimating a power threshold for nonlinearity-induced signal impairment in nanophotonic devices.

Engineering nonlinearities in nanoscale optical systems: physics and applications in dispersion-engineered silicon nanophotonic wires

The nonlinear optics of Si photonic wires is discussed. The distinctive features of these waveguides are that they have extremely large third-order susceptibility χ(3) and dispersive properties. The strong dispersion and large third-order nonlinearity in Si photonic wires cause the linear and nonlinear optical physics in these guides to be intimately linked. By carefully choosing the waveguide dimensions, both linear and nonlinear optical properties of Si wires can be engineered. We review the fundamental optical physics and emerging applications for these Si wires. In many cases, the relatively low threshold powers for nonlinear optical effects in these wires make them potential candidates for functional on-chip nonlinear optical devices of just a few millimeters in length; conversely, the absence of nonlinear optical impairment is important for the use of Si wires in on-chip interconnects. In addition, the characteristic length scales of linear and nonlinear optical effects in Si wires are markedly different from those in commonly used optical guiding systems, such as optical fibers or photonic crystal fibers, and therefore guiding structures based on Si wires represent ideal optical media for investigating new and intriguing physical phenomena.

Nonlinear-optical phase modification in dispersion-engineered Si photonic wires

The strong dispersion and large third-order nonlinearity in Si photonic wires are intimately linked in the optical physics needed for the optical control of phase. By carefully choosing the waveguide dimensions, both linear and nonlinear optical properties of Si wires can be engineered. In this paper we provide a review of the control of phase using nonlinear-optical effects such as self-phase and cross-phase modulation in dispersion-engineered Si wires. The low threshold powers for phase-changing effects in Si-wires make them potential candidates for functional nonlinear optical devices of just a few millimeters in length.

Mapping the optical properties of slab-type two-dimensional photonic crystal waveguides

We report on systematic experimental mapping of the transmission properties of two-dimensional silicon-on-insulator photonic crystal waveguides for a broad range of hole radii, slab thicknesses and waveguide lengths for both TE and TM polarizations. Detailed analysis of numerous spectral features allows a direct comparison of experimental data with 3D plane wave and finite-difference time-domain calculations. We find, counter-intuitively, that the bandwidth for low-loss propagation completely vanishes for structural parameters where the photonic band gap is maximized. Our results demonstrate that, in order to maximize the bandwidth of low-loss waveguiding, the hole radius must be significantly reduced. While the photonic band gap considerably narrows, the bandwidth of low-loss propagation in PhC waveguides is increased up to 125nm with losses as low as 8

Efficient self-phase modulation in submicron silicon-on-insulator waveguides

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Ultrafast Optical-pulse Propagation on Si Chips

2dB/cm.

Mapping the optical properties of SOI-type photonic crystal waveguides

We investigate experimentally and theoretically self-phase modulation and group velocity dispersion induced spectral broadening of picosecond pulses in silicon wires. Already for very low peak powers the limit for dense wavelength demultiplexing is reached.

Group velocity engineering in silicon nanophotonic circuits

The extremely strong crystalline-Si optical nonlinearity allows a wide variety of fs-pulse propagation effects to be readily seen at low input powers on Si chips. This talk presents a theoretical and experimental investigation using ultrasmall, Si-wire waveguides

Ultrafast Pulse Propagation on Si Chips

We report on systematic mapping of transmission properties of W1 waveguides as a function of structural parameters. We demonstrate experimentally and theoretically that the bandwidth is maximized up to 120 nm by decreasing the hole radius.