Sharee J. McNab

Active control of slow light on a chip with photonic crystal waveguides

It is known that light can be slowed down in dispersive materials near resonances. Dramatic reduction of the light group velocity—and even bringing light pulses to a complete halt—has been demonstrated recently in various atomic and solid state systems, where the material absorption is cancelled via quantum optical coherent effects. Exploitation of slow light phenomena has potential for applications ranging from all-optical storage to all-optical switching. Existing schemes, however, are restricted to the narrow frequency range of the material resonance, which limits the operation frequency, maximum data rate and storage capacity. Moreover, the implementation of external lasers, low pressures and/or low temperatures prevents miniaturization and hinders practical applications. Here we experimentally demonstrate an over 300-fold reduction of the group velocity on a silicon chip via an ultra-compact photonic integrated circuit using low-loss silicon photonic crystal waveguides that can support an optical mode with a submicrometre cross-section. In addition, we show fast (∼100 ns) and efficient (2 mW electric power) active control of the group velocity by localized heating of the photonic crystal waveguide with an integrated micro-heater.

Losses in single-mode silicon-on-insulator strip waveguides and bends

We report the fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers. Owing to the small sidewall surface roughness achieved by processing on a standard 200mm CMOS fabrication line, minimal propagation losses of 3.6+/-0.1dB/cm for the TE polarization were measured at the telecommunications wavelength of 1.5microm. Losses per 90 masculine bend are measured to be 0.086+/-0.005dB for a bending radius of 1microm and as low as 0.013+/-0.005dB for a bend radius of 2microm. These record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.

Ultra-low loss photonic integrated circuit with membrane-type photonic crystal waveguides

We report the design and testing of an SOI-based photonic integrated circuit containing two-dimensional membrane-type photonic crystal waveguides. The circuit comprises spot-size converters to efficiently couple light from a fiber into single-mode strip waveguides and butt-couplers to couple from strip waveguides to photonic crystal waveguides. Each optical interface was optimized to minimize back-reflections and reduce the Fabry-Perot noise. The transmission characteristics of each component are measured and record low propagation losses in photonic crystal waveguides of 24dB/cm are reported. The combination of an efficient two-stage coupling scheme and utilization of ultra-long (up to 2mm) photonic crystal waveguides reduces the uncertainty in determining the loss figure to 3dB/cm.

Raman amplification in ultrasmall silicon-on-insulator wire waveguides.

We measure stimulated Raman gain at 1550 nm in an ultrasmall SOI strip waveguide, cross-section of 0.098 microm2. We obtain signal amplification of up to 0.7 dB in the counter-propagating configuration for a sample length of 4.2 mm and using a diode pump at 1435 nm with powers of <30 mW. The Raman amplifier has a figure-of-merit (FOM) of 57.47 dB/cm/W. This work shows the feasibility of ultrasmall SOI waveguides for the development of SOI-based on-chip optical amplifiers and active photonic integrated circuits.

C-band wavelength conversion in silicon photonic wire waveguides

We demonstrate C-band wavelength conversion in Si photonic-wire waveguides with submicron cross-section by means of nonresonant, nondegenerate four-wave mixing (FWM) using low-power, cw-laser sources. Our analysis shows that for these deeply scaled Si waveguides, FWM can be observed despite the large phase mismatch imposed by strong waveguide dispersion. The theoretical calculations agree well with proof-of-concept experiments. The nonresonant character of the FWM scheme employed allows to demonstrate frequency tuning of the idler from ~ 20 GHz to > 100 GHz thus covering several C-band DWDM channels.

Coupling into the slow light mode in slab-type photonic crystal waveguides

Coupling external light signals into a photonic crystal (PhC) waveguide becomes increasingly inefficient as the group velocity of the waveguiding mode slows down. We have systematically studied the efficiency of coupling in the slow light regime for samples with different truncations of the photonic lattice at the coupling interface between a strip waveguide and a PhC waveguide. An inverse power law dependence is found to best fit the experimental scaling of the coupling loss on the group index. Coupling efficiency is significantly improved up to group indices of 100 for a truncation of the lattice that favors the appearance of photonic surface states at the coupling interface in resonance with the slow light mode.

Ultrafast-pulse self-phase modulation and third-order dispersion in Si photonic wire-waveguides

By propagating femtosecond pulses inside submicron-crosssection Si photonic-wire waveguides with anomalous dispersion, we demonstrate that the pulse-propagation dynamics is strongly influenced by the combined action of optical nonlinearity and up to third-order dispersion with minimal carrier effects. Because of strong light confinement, a nonlinear phase shift of a few pi due to self-phase modulation is observed at a pulse peak-power of just ~250 mW. We also observe soliton-emitted radiation, fully supported by theoretical analysis, from which we determine directly the third-order dispersion coefficient, beta(3) = -0.73 +/- 0.05 ps(3)/m at 1537 nm.

Cross-phase modulation-induced spectral and temporal effects on co-propagating femtosecond pulses in silicon photonic wires.

By performing time-resolved experiments and power-dependent measurements using femtosecond pulses inside submicron cross-section Si photonic-wire waveguides, we demonstrate strong cross-phase modulation (XPM) effects. We find that XPM in Si wires can be significant even for low peak pump powers, i.e., ~15 mW for pi phase shift. Our experimental data closely match numerical simulations using a rigorous coupled-wave theoretical treatment. Our results suggest that XPM is a potentially useful approach for all-optical control of photonic devices in Si wires.

Nonlinear-optical phase modification in dispersion-engineered Si photonic wires

The strong dispersion and large third-order nonlinearity in Si photonic wires are intimately linked in the optical physics needed for the optical control of phase. By carefully choosing the waveguide dimensions, both linear and nonlinear optical properties of Si wires can be engineered. In this paper we provide a review of the control of phase using nonlinear-optical effects such as self-phase and cross-phase modulation in dispersion-engineered Si wires. The low threshold powers for phase-changing effects in Si-wires make them potential candidates for functional nonlinear optical devices of just a few millimeters in length.

Mapping the optical properties of slab-type two-dimensional photonic crystal waveguides

We report on systematic experimental mapping of the transmission properties of two-dimensional silicon-on-insulator photonic crystal waveguides for a broad range of hole radii, slab thicknesses and waveguide lengths for both TE and TM polarizations. Detailed analysis of numerous spectral features allows a direct comparison of experimental data with 3D plane wave and finite-difference time-domain calculations. We find, counter-intuitively, that the bandwidth for low-loss propagation completely vanishes for structural parameters where the photonic band gap is maximized. Our results demonstrate that, in order to maximize the bandwidth of low-loss waveguiding, the hole radius must be significantly reduced. While the photonic band gap considerably narrows, the bandwidth of low-loss propagation in PhC waveguides is increased up to 125nm with losses as low as 8