Eric Scott Moyer

Ultra low-k porous silicon dioxide films from a plasma process

Ultra low dielectric constant porous silicon dioxide films were obtained through a plasma curing process. The process developed was based on a hydrogen silsesquioxane (HSQ) spin-on process with induction of porosity. The dielectric constants of plasma cured films are in a range of 2.0-2.2. The Youngs modulus values of the porous silicon dioxide films are between 5.7 and 9.0 GPa. The plasma cured porous films demonstrate the characteristics of porous silicon oxide. Furthermore, post plasma treatments have been developed to curb moisture adsorption in the films. The advantages of the plasma curing process are lower temperature, shorter processing time, and higher mechanical strength of the film than the thermal curing process.

57.3: Transparent Silicon‐based Low‐k Dielectric Materials for TFT‐LTPS Displays

Silsesquioxane resins are of particular interest for use as insulator materials in flat panel display applications due to their balance of electrical, optical, and mechanical properties. In this study, a series of HSQ and MSQ resins were synthesized and characterized in terms of their structures and thin film properties. These resin systems yielded high quality thin films with high modulus, good adhesion to silicon and glass substrates, high optical transparency (>98 % @ 300 − 800 nm), good planarization properties, excellent gap fill capability, good thermal and chemical stability to various photoresist and ITO etch chemicals necessary for the fabrication of flat panel displays.

Ultra Low-K Inorganic Silsesquioxane Films with Tunable Electrical and Mechanical Properties

Low-k dielectric films have been developed using a new silsesquioxane based chemistry that allows both the electrical and mechanical properties to be tuned to specific values. By controlling the composition and film processing conditions of spin-on formulations, dielectric constants in the range 1.5 to 3.0 are obtained with modulus values that range from 1 to 30 GPa. The modulus and dielectric constant are tuned by controlling porosity, which varies from 0 to >60%, and final film composition which varies from HSiO 3/2 to SiO 4/2 . The spin-on formulation includes hydrogen silsesquioxane resin and solvents. Adjusting the ratio of solvents to resin in the spin-on formulation controls porosity. As-spun films are treated with ammonia and moisture to oxidize the resin and form a mechanically self-supporting gel. Solvent removal and further conversion to a more “silica-like” composition occur during thermal curing at temperatures of 400 to 450°C. The final film composition was controlled through both room temperature oxidation and thermal processing. Final film properties are optimized for a balance of electrical, mechanical and thermal properties to meet the specific requirements of a wide range of applications. Processed films exhibit no stress corrosion cracking or delamination upon indentation, with indenter penetration exceeding the film thickness, and followed by exposure to water at room temperature. Films also exhibit high adhesive strength (> 60MPa) and low moisture absorption. Processing conditions, composition and properties of thin are discussed.

Ultra low dielectric constant silsesquioxane based resin [ILDs]

Low dielectric constant films have been developed by a new silsesquioxane based chemistry with k values approaching 1.5. A process has been developed which allows the control of the electrical and mechanical properties of the films. In addition, thick, crack-free films can be prepared which are suitable for copper damascene processes.

Development of Spin-on Pre Metal Dielectrics (PMD) for 0.10UM Design Rule and Beyond

Spin-on pre metal dielectric (PMD) materials are being developed for memory and logic devices at 0.10 um design rules and beyond. The stringent design rules require a PMD material with a low thermal budget, excellent gap fill capability, and etch resistance similar to that of a thermal oxide. Spin-on PMD is being developed to meet these requirements as current PMD technologies of HDP CVD and BPSG reflow are constrained by void formation or high thermal budget requirement. One common challenge that faces spin-on PMD is inhomogeneous densification, or “corner etch”. In this paper EELS-STEM, FTIR, SEM and HF wet etching were used to study the mechanism of this phenomenon. This information provides a possible route for the development of spin-on PMD resins.