Eric Stinaff

Optical pumping of the electronic and nuclear spin of single charge-tunable quantum dots.

We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.

Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules

Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. The authors have grown vertically aligned pairs of InAs∕GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. They present a systemic investigation of tunneling energies over a wide range of interdot barrier thickness. The concepts discussed here provide an important tool for the systematic design and characterization of more complicated quantum dot nanostructures.

Polarized fine structure in the photoluminescence excitation spectrum of a negatively charged quantum dot.

We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge-tunable quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wave functions through asymmetric e-e and e-h exchange interactions.

Electrically Tunable g Factors in Quantum Dot Molecular Spin States

We present a magnetophotoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g factors of different spin states that have molecular wave functions distributed over both quantum dots. We propose a phenomenological model for the change in g factor based on resonant changes in the amplitude of the wave function in the barrier due to the formation of bonding and antibonding orbitals.

Spin fine structure of optically excited quantum dot molecules

The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of

Photoluminescence spectroscopy of the molecular biexciton in vertically stacked InAs-GaAs quantum dot pairs

\mathrm{In}\mathrm{As}∕\mathrm{Ga}\mathrm{As}

Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy.

double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin-exchange interactions, Pauli exclusion, and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals but also spins.

Quantum-confined Stark effects in coupled InAs/GaAs quantum dots

We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances. The spectra are described well within a few-level, few-particle molecular model. Their properties can be modified broadly by an electric field and by structural design, which makes them highly attractive for controlling nonlinear optical properties.

Suppression of Dyakonov-Perel spin relaxation in high-mobility n-GaAs.

Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by k·p theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exchange interactions are studied and we found the system is in the strong confinement regime. Microphotoluminescence spectra and lifetimes were calculated and compared with measurements performed on a set of quantum rings in a single sample. Some features of spectra are in good agreement.

Broadband femtosecond transient absorption spectroscopy for a CVD Mo S 2 monolayer

We report the effects of tunnel coupling on the Quantum-Confined Stark Effect (QCSE) for excitons in InAs/GaAs coupled quantum dots (CQDs). As the barrier separating the dots is reduced, the zero-field dipole moment and the polarizability are both found to increase. This systematic variation as a function of barrier thickness is due to factors including the formation of molecular wavefunctions, the electron/hole effective masses, and the CQD structural properties. The dipole moment for the interdot exciton is found to be up to 100 times larger than that of the intradot exciton resulting in a predominantly linear shift with field. The ability to control the QCSE of the exciton in a single CQD could be useful for a new class of single photon optical switches and tunable emitters.