Erich Schlecht

Penetrating 3-D Imaging at 4- and 25-m Range Using a Submillimeter-Wave Radar

We show experimentally that a high-resolution imaging radar operating at 576-605 GHz is capable of detecting weapons concealed by clothing at standoff ranges of 4-25 m. We also demonstrate the critical advantage of 3-D image reconstruction for visualizing hidden objects using active-illumination coherent terahertz imaging. The present system can image a torso with <1 cm resolution at 4 m standoff in about five minutes. Greater standoff distances and much higher frame rates should be achievable by capitalizing on the bandwidth, output power, and compactness of solid state Schottky-diode based terahertz mixers and multiplied sources.

An all-solid-state broad-band frequency multiplier chain at 1500 GHz

We report the results of a high-performance all-solid-state broad-band frequency multiplier chain at 1500 GHz, which uses four cascaded planar Schottky-barrier varactor doublers. The multipliers are driven by monolithic-microwave integrated-circuit-based high electron-mobility transistor power amplifiers around 95 GHz with 100-150 mW of pump power. The design incorporates balanced doublers utilizing novel substrateless and membrane device fabrication technologies, achieving low-loss broad-band multipliers working in the terahertz range. For a drive power of approximately 100 mW in the 88-99-GHz range, the doublers achieved room-temperature peak efficiencies of approximately 30% at the 190-GHz stage, 20% at 375 GHz, 9% at 750 GHz, and 4% at the 1500-GHz stage. When the chain was cooled to 120 K, approximately 40 /spl mu/W of peak output power was measured for 100 mW of input pump power.

A High-Resolution Imaging Radar at 580 GHz

We have developed a high-resolution imaging radar at 580 GHz. Coherent illumination in the 576-589 GHz range and phase-sensitive detection are implemented in an all-solid-state design based on Schottky diode sensors and sources. By employing the frequency-modulated continuous wave (FMCW) radar technique, we achieve centimeter-scale range resolution while utilizing fractional bandwidths of less than 3%. Our high operating frequencies also permit centimeter-scale cross-range resolution at several-meter standoff distances without large apertures. Scanning of a single-pixel transceiver enables targets to be rapidly mapped in three dimensions, and here we apply this technology to the detection of concealed objects on persons.

A 540-640-GHz high-efficiency four-anode frequency tripler

We report on the design and performance of a broad-band, high-power 540-640-GHz fix-tuned balanced frequency tripler chip that utilizes four planar Schottky anodes. The suspended strip-line circuit is fabricated with a 12-/spl mu/m-thick support frame and is mounted in a split waveguide block. The chip is supported by thick beam leads that are also used to provide precise RF grounding. At room temperature, the tripler delivers 0.9-1.8 mW across the band with an estimated efficiency of 4.5%-9%. When cooled to 120 K, the tripler provides 2.0-4.2 mW across the band with an estimated efficiency of 8%-12%.

Fabrication of 200 to 2700 GHz multiplier devices using GaAs and metal membranes

Multiplier device fabrication techniques have been developed to enable robust implementation of monolithic circuits well into the THz frequency range. To minimize the dielectric loading of the waveguides, some circuits are realized entirely on a 3 /spl mu/m thick GaAs membrane with metal beamleads acting as RF probes and DC contact points. Other designs retain some thicker GaAs as a support and handling structure, allowing a membrane of bare metal or thin GaAs to be suspended across an input or output waveguide. Extensive use is made of selective etches, both reactive ion (RIE) and wet chemical, to maintain critical dimensions. Electron beam (e-beam) lithography provides the small contact areas required at the highest frequencies. Planar multiplier circuits for 200 GHz to 2700 GHz have been demonstrated using a variety of metal and GaAs membrane configurations made available by these fabrication techniques.

A 1.7-1.9 THz local oscillator source

We report on the design and performance of a /spl times/2/spl times/3/spl times/3 frequency multiplier chain to the 1.7-1.9 THz band. GaAs-based planar Schottky diodes are utilized in each stage. A W-band power amplifier, driven by a commercially available synthesizer, was used to pump the chain with 100 mW of input power. The peak measured output power at room temperature is 3 /spl mu/W at 1740 GHz. When cooled to 120 K, the chain provides more than 1.5 /spl mu/W from 1730 to 1875 GHz and produced a peak of 15 /spl mu/W at 1746 GHz.

200, 400 and 800 GHz Schottky diode "substrateless" multipliers: design and results

Several sub-millimeter doubler circuits have been designed and built using a new fabrication technology. To reduce the RF losses in the passive circuitry, the substrate under the transmission lines is etched away, leaving the metal suspended in air held by its edges on a GaAs frame. This allows the circuit to be handled and mounted easily, and makes it very robust. To demonstrate this technology, broadband balanced planar doublers have been built and tested at 400 GHz. The next generation 200, 400 and 800 GHz doublers with improved performance are also discussed. The 368-424 GHz circuits were measured and achieved 20% efficiency at 387 GHz. The 3 dB bandwidth of the fix-tuned doubler is around 9%. The maximum output power measured is around 8 mW and drops down to 1 mW at 417 GHz. This represents the highest frequency waveguide based planar doubler to date in the literature.

Demonstration of a room temperature 2.48–2.75 THz coherent spectroscopy source

We report the first demonstration of a continuous wave coherent source covering 2.48-2.75 THz, with greater than 10% instantaneous tuning bandwidth and having 1-14 μW of output power at room temperature. This source is based on a 91.8-101.8 GHz synthesizer followed by a power amplifier and three cascaded frequency triplers. It demonstrates for the first time that purely electronic solid-state sources can generate a useful amount of power in a region of the electromagnetic spectrum where lasers (solid state or gas) were previously the only available coherent sources. The bandwidth, agility, and operability of this THz source have enabled wideband, high resolution spectroscopic measurements of water, methanol, and carbon monoxide with a resolution and signal-to-noise ratio unmatched by any other existing system, providing new insight in the physics of these molecules. Furthermore, the power and optical beam quality are high enough to observe the Lamb-dip effect in water. The source frequency has an absolute accuracy better than 1 part in 10(12) and the spectrometer achieves sub-Doppler frequency resolution better than 1 part in 10(8). The harmonic purity is better than 25 dB. This source can serve as a coherent signal for absorption spectroscopy, a local oscillator for a variety of heterodyne systems and can be used as a method for precision control of more powerful but much less frequency agile quantum mechanical terahertz sources.

A high-power Ka-band quasi-optical amplifier array

Results for a high-power Ka-band quasi-optical amplifier array are presented in this paper. The amplifier consists of a 45-element double-sided active array with a hard-horn feed. Excess heat is removed via a metal carrier integrated into the array with liquid cooling at the periphery. Each unit cell of the array consists of transmitting and receiving patch antennas, driver and power amplifier monolithic microwave integrated circuits on input and output layers, and a through-plate coaxial transition, which connects the input and output layers. An estimated 25 W is radiated when the amplifier is used as an antenna feed, otherwise 13 W is collected into waveguide. Experimental results and construction details are discussed.

A broadband 800 GHz Schottky balanced doubler

A broadband planar Schottky balanced doubler at 800 GHz has been designed and built. The design utilizes two Schottky diodes in a balanced configuration on a 12 /spl mu/m thick gallium arsenide (GaAs) substrate as a supporting frame. This broadband doubler (designed for 735 GHz to 850 GHz) uses a split waveguide block and has a relatively simple, fast, and robust assembly procedure. The doubler achieved /spl ap/10% efficiency at 765 GHz, giving 1.1 mW of peak output power when pumped with about 9 mW of input power at room temperature.