Erik Janzén

Diffusion of tellurium dopant in silicon

The diffusion of tellurium in silicon has been investigated by means of secondary ion mass spectrometry. In the temperature interval between 900 and 1250 °C the diffusion coefficient has been found to range from ∼2×10−15 to 6×10−12 cm2/s, i.e., several orders of magnitude lower than the diffusion coefficients of the other chalcogens S and Se. In units of cm2/s and eV, the results may be expressed as DTe=0.50 exp(−3.34/kT), suggestive of a predominantly substitutional mechanism of diffusion.

Fourier photo‐admittance spectroscopy

A new method of measurement is described in which Fourier technique is applied to diodes. It has the high signal‐to‐noise ratio and resolution of Fourier spectroscopy, as applied previously to photoconductors, as well as the thin‐layer sensitivity of junction techniques. It extends the usefulness of junction techniques to spectral regions where, with a conventional monochromator, room‐temperature radiation dominates over the incident monochromatic light. The method is exemplified by measurements on a level 0.3 eV below the conduction band in selenium‐doped silicon.

Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS

The deep levels ON1 and ON2a/b introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON2a/b defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.

Fano resonances in sulfur, selenium and tellurium doped silicon

Abstract There are structures above the ionization edge in sulfur, selenium or tellurium doped silicon, which can be interpreted as Fano resonances. The interacting processes are a no-phonon transition to the continuum and the transition to a bound excited state accompanied by emission of an intervalley phonon. The binding energies of the ls(E) and 2s(A l ) states are determined.