Erik Perzon

Infrared photocurrent spectral response from plastic solar cell with low-band-gap polyfluorene and fullerene derivative

Plastic solar cells were fabricated using a low-band-gap alternating copolymer of fluorene and a donor–acceptor–donor moiety (APFO-Green1), blended with [6,6]-phenyl-C61-butyric acid methylester or 3′-(3,5-Bis-trifluoromethylphenyl)-1′-(4-nitrophenyl)pyrazolino[60]fullerene as electron acceptors. The polymer shows optical absorption in two wavelength ranges from 300<λ<500nm and 650<λ<1000nm. Devices based on APFO-Green1 blended with the later fullerene exhibit an outstanding photovoltaic behavior at the infrared range, where the external quantum efficiency is as high as 8.4% at 840nm and 7% at 900nm, while the onset of photogeneration is found at 1μm. A photocurrent density of 1.76mA∕cm2, open-circuit voltage of 0.54V, and power conversion efficiency of 0.3% are achieved under the illumination of AM1.5 (1000W∕m2) from a solar simulator.

1 micron wavelength photo- and electroluminescence from a conjugated polymer

We report photo- and electroluminescence from an alternating conjugated polymer consisting of fluorene units and low-band gap donor-acceptor-donor (D–A–D) units. The D–A–D segment includes two elec ...

High carrier mobility in low band gap polymer-based field-effect transistors

A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluo ...

Red and near infrared polarized light emissions from polyfluorene copolymer based light emitting diodes

The authors report polarized red, electroluminescence peak at 705 nm and near IR, electroluminescence peak at 950 nm, light emission from light emitting diodes based on two polyfluorene copolymers. The copolymers are synthesized from a fluorene monomer combined with donor-acceptor-donor comonomers and designed to have a low band gap and form birefringent liq. cryst. phases. Emission occurs from aligned thin films of polymer layers. The emissive layers are aligned by spin coating on a layer of rubbed conducting polymer poly(3,4-ethylene dioxythiophene)-poly(styrene sulfonate) and thermally converted into glassy nematic liq. cryst. state. [on SciFinder (R)]

Light amplification in polymer field effect transistor structures

The amplified spontaneous emission (ASE) of optically pumped films of poly(2-(2′,5′-bis(octyloxy)benzene)-1,4-phenylenevinylene (BOP-PPV) was studied in structures comprising a gate electrode, a thin film of gate insulator material (SiO2) and the polymer film as luminescent semiconducting layer (i.e. a field effect transistor without the source and drain electrodes). The influences of different gate electrodes on the threshold and the wavelength of the amplified emission were measured for variable thickness of the gate insulator. An exponential increase in ASE threshold (It) with decreasing separation between electrode and polymer layer was observed. In structures with 200 nm SiO2 gate insulator, It=300 kW/cm2 with an n-Si gate electrode and 200 kW/cm2 with Au electrode (100 nm thick). Compared to the same polymer film on pure SiO2 (It=2 kW/cm2), this increase results from waveguide losses in the nearby gate electrode. With an indium–tin–oxide (ITO) gate electrode (140 nm thick) on glass, again with a 200...

Optical amplification of the cutoff mode in planar asymmetric polymer waveguides

Modes with low threshold for optical gain were observed at wavelengths close to the cutoff in experiments probing the amplified spontaneous emission of light-emitting polymer thin films. The polymer was the semiconductor layer in a multilayer semiconductor–insulator–metal structure that simulates the one-dimensional waveguide characteristics in the channel of a field-effect transistor. The “cutoff” mode propagates at the polymer/gate-insulator interface, has an optical gain threshold of approximately 10 kW/cm2, and is not influenced by absorption of the gate electrode. The wavelength of the amplified emission tracks the cutoff wavelength of the asymmetric double-waveguide structure and the cutoff mode is, therefore, tunable in wavelength. Our results suggest that the light-emitting field-effect transistor architecture is a promising route for the construction of an injection laser.

Sub-picosecond time-dependent mobility in low-band-gap polyphenylene:Fullerene blend probed by terahertz spectroscopy

Time-resolved terahertz spectroscopy is used to investigate photoinduced dynamics of charge carriers in a polymer heterojunction. We directly observe instantaneous generation of highly mobile charge carriers followed by a rapid drop in their mobility.

Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers

We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 micrometer. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 0.003 cm2/Vs and current on/off ratio of 104 were achieved at ambient atmosphere.