Erik Vilain Thomsen

Piezoresistive effect in top-down fabricated silicon nanowires

We have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the piezoresistive effect of 633% compared to bulk silicon. Preliminary temperature measurements indicate a larger temperature dependence of silicon nanowires, compared to bulk silicon. An increase of up to 34% compared to bulk polysilicon is observed in polysilicon nanowires with decreasing dimensions.

3-D imaging using row–column-addressed arrays with integrated apodization— part ii: transducer fabrication and experimental results

This paper demonstrates the fabrication, characterization, and experimental imaging results of a 62+62 element λ/2-pitch row-column-addressed capacitive micromachined ultrasonic transducer (CMUT) array with integrated apodization. A new fabrication process was used to manufacture a 26.3 mm by 26.3 mm array using five lithography steps. The array includes an integrated apodization, presented in detail in Part I of this paper, which is designed to reduce the amplitude of the ghost echoes that are otherwise prominent for row-column-addressed arrays. Custom front-end electronics were produced with the capability of transmitting and receiving on all elements, and the option of disabling the integrated apodization. The center frequency and -6-dB fractional bandwidth of the array elements were 2.77 ± 0.26 MHz and 102 ± 10%, respectively. The surface transmit pressure at 2.5 MHz was 590 ± 73 kPa, and the sensitivity was 0.299 ± 0.090 V/Pa. The nearest neighbor crosstalk level was -23.9 ± 3.7 dB, while the transmit-to-receive-elements crosstalk level was -40.2 ± 3.5 dB. Imaging of a 0.3-mm-diameter steel wire using synthetic transmit focusing with 62 single-element emissions demonstrated axial and lateral FWHMs of 0.71 mm and 1.79 mm (f-number: 1.4), respectively, compared with simulated axial and lateral FWHMs of 0.69 mm and 1.76 mm. The dominant ghost echo was reduced by 15.8 dB in measurements using the integrated apodization compared with the disabled configuration. The effect was reproduced in simulations, showing a ghost echo reduction of 18.9 dB.

A wearable “electronic patch” for wireless continuous monitoring of chronically diseased patients

We present a wearable health system (WHS) for non-invasive and wireless monitoring of physiological signals. The system is made as an electronic patch where sensors, low power electronics, and radio communication are integrated in an adhesive material of hydrocolloid polymer making it a sticking patch. The patch is made with a reusable part and a disposable part which contains the adhesive material and the battery. This part is changed once every week. The patch has a size of 88 mm by 60 mm and a thickness of 5 mm. It is made for attachment on truncus or the greater muscle groups. The patch is demonstrated in two applications: Monitoring of electromyography (EMG) and arterial oxygen saturation by pulse oximetry (SpO2). The pulse oximetry sensor is made of a concentric backside Silicon photodiode with a hole in the middle for the two light sources. This makes it suitable for reflectance pulse oximetry. For the EMG application three standard dry silver electrodes are used separated by 10 mm.

3-D imaging using row-column-addressed arrays with integrated apodization - part i: apodization design and line element beamforming

This paper investigates the effect of transducerintegrated apodization in row-column-addressed arrays and presents a beamforming approach specific for such arrays. Row-column addressing 2-D arrays greatly reduces the number of active channels needed to acquire a 3-D volume. A disadvantage of row-column-addressed arrays is an apparent ghost effect in the point spread function caused by edge waves. This paper investigates the origin of the edge waves and the effect of introducing an integrated apodization to reduce the ghost echoes. The performance of a λ/2-pitch 5-MHz 128 + 128 row-column-addressed array with different apodizations is simulated. A Hann apodization is shown to decrease imaging performance away from the center axis of the array because of a decrease in main lobe amplitude. Instead, a static roll-off apodization region located at the ends of the line elements is proposed. In simulations, the peak ghost echo intensity of a scatterer at (x, y, z) = (8, 3, 30) mm was decreased by 43 dB by integrating roll-off apodization into the array. The main lobe was unaffected by the apodization. Simulations of a 3-mm-diameter anechoic blood vessel at 30 mm depth showed that applying the transducer-integrated apodization increased the apparent diameter of the vessel from 2.0 mm to 2.4 mm, corresponding to an increase from 67% to 80% of the true vessel diameter. The line element beamforming approach is shown to be essential for achieving correct time-of-flight calculations, and hence avoid geometrical distortions. In Part II of this work, experimental results from a capacitive micromachined ultrasonic transducer with integrated roll-off apodization are given to validate the effect of integrating apodization into the line elements.

Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

We present a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The most common piezoelectric energy harvesting devices utilize a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric material. It provides mechanical support but it also reduces the power output. Our device replaces the support with another layer of the piezoelectric material, and with the absence of an inactive mechanical support all of the stresses induced by the vibrations will be harvested by the active piezoelectric elements.

MEMS-based thick film PZT vibrational energy harvester

We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 µW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s−2) input acceleration at its resonant frequency of 235 Hz.

Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters

We describe the fabrication and characterization of a significantly improved version of a microelectromechanical system-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass; the harvester is fabricated in a fully monolithic process. The main advantage of bimorph vibration energy harvesters is that strain energy is not lost in mechanical support materials since only Pb(ZrxTi1-x)O3 (PZT) is strained; as a result, the effective system coupling coefficient is increased, and thus a potential for significantly higher output power is released. In addition, when the two layers are connected in series, the output voltage is increased, and as a result the relative power loss in the necessary rectifying circuit is reduced. We describe an improved process scheme for the energy harvester, which resulted in a robust fabrication process with a record high fabrication yield of 98%. The robust fabrication process allowed a high pressure treatment of the screen printed PZT thick films prior to sintering. The high pressure treatment improved the PZT thick film performance and increased the harvester power output to 37.1 ?W at 1 g root mean square acceleration. We also characterize the harvester performance when only one of the PZT layers is used while the other is left open or short circuit.

A Ring-Shaped Photodiode Designed for Use in a Reflectance Pulse Oximetry Sensor in Wireless Health Monitoring Applications

We report a photodiode for use in a reflectance pulse oximeter for use in autonomous and low-power homecare applications. The novelty of the reflectance pulse oximeter is a large ring shaped backside silicon pn photodiode. The ring-shaped photodiode gives optimal gathering of light and thereby enable very low light-emitting diode (LED) driving currents for the pulse oximeter. The photodiode also have a two layer SiO2/SiN interference filter yielding 98% transmission at the measuring wavelengths, 660 nm and 940 nm, and suppressing other wavelengths down to 50% transmission. The photodiode has a radius of 3.68 mm and a width of 0.78 mm giving an area of 18 mm2. The capacitance of the photodiode is measured to 34.5 nF. The quantum efficiency of the photodiode is measured to 55% and 62% at 660 nm and 940 nm, respectively. It is acceptable for this prototype but can be improved. The sensor also has an on-chip integrated Au thermistor for measuring the skin temperature of the body. The thermistor has a Temperature Coefficient of Resistance of 2.7·10-3 K-1 and a repeatability on temperature measurements of ±0.26°C. The photodiode is fabricated in a clean room environment by two diffusion processes and an Advanced Silicon Etch to make the hole in the middle for the LEDs. The sensor is designed to be integrated in a sticking patch of hydrocolloid polymer together with integrated electronics, radio communication unit, and a coin cell battery. The reflectance pulse oximetry sensor is demonstrated to work in a laboratory setup with a Ledtronics dual LED with wavelengths of 660 and 940 nm. Using this setup photoplethysmograms which clearly show the cardiovascular cycle have been recorded. The sensor is shown to work very well with low currents of less than 10 mA.

Piezoresistance in p-type silicon revisited

We calculate the shear piezocoefficient π44 in p-type Si with a 6×6 k⋅p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find that the relaxation-time model needs to include all scattering mechanisms in order to obtain correct temperature and acceptor density dependencies. The k⋅p results are compared to results obtained using a recent tight-binding (TB) model. The magnitude of the π44 piezocoefficient obtained from the TB model is a factor of 4 lower than experimental values; however, the temperature and acceptor density dependencies of the normalized values agree with experiments. The 6×6 Hamiltonian model shows good agreement between the absolute value of π44 and the temperature and acceptor density dependencies when compared to experiments. Finally, we present a fitting function of temperature and acceptor density to the 6×6 model that can be ...

Novel Designs for Application Specific MEMS Pressure Sensors

In the framework of developing innovative microfabricated pressure sensors, we present here three designs based on different readout principles, each one tailored for a specific application. A touch mode capacitive pressure sensor with high sensitivity (14 pF/bar), low temperature dependence and high capacitive output signal (more than 100 pF) is depicted. An optical pressure sensor intrinsically immune to electromagnetic interference, with large pressure range (0–350 bar) and a sensitivity of 1 pm/bar is presented. Finally, a resonating wireless pressure sensor power source free with a sensitivity of 650 KHz/mmHg is described. These sensors will be related with their applications in harsh environment, distributed systems and medical environment, respectively. For many aspects, commercially available sensors, which in vast majority are piezoresistive, are not suited for the applications proposed.