Erin Patrick

Corrosion of Tungsten Microelectrodes used in Neural Recording Applications

In neuroprosthetic applications, long-term electrode viability is necessary for robust recording of the activity of neural populations used for generating communication and control signals. The corrosion of tungsten microwire electrodes used for intracortical recording applications was analyzed in a controlled bench-top study and compared to the corrosion of tungsten microwires used in an in vivo study. Two electrolytes were investigated for the bench-top electrochemical analysis: 0.9% phosphate buffered saline (PBS) and 0.9% PBS containing 30 mM of hydrogen peroxide. The oxidation and reduction reactions responsible for corrosion were found by measurement of the open circuit potential and analysis of Pourbaix diagrams. Dissolution of tungsten to form the tungstic ion was found to be the corrosion mechanism. The corrosion rate was estimated from the polarization resistance, which was extrapolated from the electrochemical impedance spectroscopy data. The results show that tungsten microwires in an electrolyte of PBS have a corrosion rate of 300-700 μm/yr. The corrosion rate for tungsten microwires in an electrolyte containing PBS and 30 mM H₂O₂ is accelerated to 10,000-20,000 μm/yr. The corrosion rate was found to be controlled by the concentration of the reacting species in the cathodic reaction (e.g. O₂ and H₂O₂). The in vivo corrosion rate, averaged over the duration of implantation, was estimated to be 100 μm/yr. The reduced in vivo corrosion rate as compared to the bench-top rate is attributed to decreased rate of oxygen diffusion caused by the presence of a biological film and a reduced concentration of available oxygen in the brain.

Electrode impedance analysis of chronic tungsten microwire neural implants: understanding abiotic vs. biotic contributions

Changes in biotic and abiotic factors can be reflected in the complex impedance spectrum of the microelectrodes chronically implanted into the neural tissue. The recording surface of the tungsten electrode in vivo undergoes abiotic changes due to recording site corrosion and insulation delamination as well as biotic changes due to tissue encapsulation as a result of the foreign body immune response. We reported earlier that large changes in electrode impedance measured at 1 kHz were correlated with poor electrode functional performance, quantified through electrophysiological recordings during the chronic lifetime of the electrode. There is a need to identity the factors that contribute to the chronic impedance variation. In this work, we use numerical simulation and regression to equivalent circuit models to evaluate both the abiotic and biotic contributions to the impedance response over chronic implant duration. COMSOL® simulation of abiotic electrode morphology changes provide a possible explanation for the decrease in the electrode impedance at long implant duration while biotic changes play an important role in the large increase in impedance observed initially.

Design and Fabrication of a Flexible Substrate Microelectrode Array for Brain Machine Interfaces

We report a neural microelectrode array design that leverages the recording properties of conventional microwire electrode arrays with the additional features of precise control of the electrode geometries. Using microfabrication techniques, a neural probe array is fabricated that possesses a flexible polyimide-based cable. The performance of the design was tested with electrochemical impedance spectroscopy and in vivo studies. The gold-plated electrode site has an impedance value of 0.9 MOmega at 1 kHz. Acute neural recording provided high neuronal yields, peak-to-peak amplitudes (as high as 100muV), and signal-to-noise ratios (27dB)

Perspective on Flipping Circuits I

A flipped-classroom approach was implemented in a Circuits I class for electrical and computer engineering majors to lower its high attrition and failure rate. Students were asked to watch online lectures and then come to class prepared to work problems in small groups of four. The attitude, retention, and performance of students in the flipped group in Spring 2013 were compared to those for the traditionally taught group in Fall 2012. The Fall 2012 lectures were recorded, so that each group saw the same lectures. Student retention and test performance was significantly higher in the flipped course. In Fall 2012, 56% of the initially enrolled students received a C or better. In Spring 2013, this improved to 83%. The first exam scores were significantly better in Spring 2013, and this helped with student success. The authors believe that it was the alignment of online lectures, face-to-face student/teacher and peer/peer interactions, combined with the active learning component of the flipped classroom that led to these improvements .

Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage

A combination of TRIM and FLOODS models the effect of radiation damage on AlGaN/GaN HEMTs. While excellent fits are obtained for threshold voltage shift, the models do not fully explain the increased reliability observed experimentally. In short, the addition of negatively-charged traps in the GaN buffer layer does not significantly change the electric field at the gate edges at radiation fluence levels seen in this study. We propose that negative trapped charge at the nitride/AlGaN interface actually produces the virtual-gate effect that results in decreasing the magnitude of the electric field at the gate edges and thus the increase in critical voltage. Simulation results including nitride interface charge show significant changes in electric field profiles while the I-V device characteristics do not change.

Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage

The effect of proton irradiation on the off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was studied by irradiating protons from the backside of the samples through via holes fabricated directly under the active area of the HEMTs. There was no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for HEMTs irradiated with 275 keV protons, for which the defects created by the proton irradiation were intentionally placed in the GaN buffer. HEMTs with defects positioned in the 2 dimensional electron gas channel region and AlGaN barrier using 330 keV protons not only showed degradation of both drain current and extrinsic transconductance but also exhibited an improvement of the off-state drain breakdown voltage. Finite-element simulations showed the enhancement of the latter were due to a reduction in electric field strength at the gate edges by introduction of charged defects.

Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistors were electrically stressed using off-state high reverse gate biases. In devices demonstrating the largest, most rapid decrease in normalized maximum drain current, defects were found at the gate/AlGaN epilayer interface and characterized using high-angle annular dark-field scanning transmission electron microscopy. These defects appear to be a reaction between the Ni layer of the Ni/Au gate metal stack and the AlGaN epilayer. Additionally, simulations of the electric field lines from the defective devices match the defect morphology. These results provide important insight toward understanding failure mechanisms and improving reliability of Ni-gate AlGaN/GaN high electron mobility transistors.

Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping

Sub-bandgap optical pumping with wavelengths of 671, 532, or 447 nm was employed to study traps in AlGaN/GaN high electron mobility transistors. The trap energies were determined from the Arrhenius plots of transient drain current at different temperatures. Prominent states were located around 0.7 eV below the conduction band, and these are commonly reported to be nonradiative traps due to defects trapped on dislocations or possibly Ga interstitials. In addition, traps located at 1.9 and 2.35 eV below the conduction band were found, which have been reported as NGa antisite and VGa–ON complexes, respectively. The postillumination drain current decays were analyzed with a persistent photoconductivity method, and time constants were extracted and associated with the recapture process in the AlGaN barrier and GaN channel layers.

Flexible polymer substrate and tungsten microelectrode array for an implantable neural recording system

This paper describes the process flow and testing of a substrate for a fully implantable neural recording system. Tungsten microwires are hybrid-packaged on a micromachined flexible polymer substrate forming an intracortical microelectrode array for brain machine interfaces. The microelectrode array is characterized on the bench top and tested in vivo. The microelectrode noise floor is less than 2 μV and acute recording results show a signal to noise ratio of 9.9–17.3 dB. The technique of hybrid fabrication of the electrodes on a flexible substrate provides a general platform for the development of an implantable neural recording system

Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation

Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the two dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only ...