Erman Engin

Photon pair generation in a silicon micro-ring resonator with reverse bias enhancement

Photon sources are fundamental components for any quantum photonic technology. The ability to generate high count-rate and low-noise correlated photon pairs via spontaneous parametric down-conversion using bulk crystals has been the cornerstone of modern quantum optics. However, future practical quantum technologies will require a scalable integration approach, and waveguide-based photon sources with high-count rate and low-noise characteristics will be an essential part of chip-based quantum technologies. Here, we demonstrate photon pair generation through spontaneous four-wave mixing in a silicon micro-ring resonator, reporting separately a maximum coincidence-to-accidental (CAR) ratio of 602 ± 37 (for a generation rate of 827kHz), and a maximum photon pair generation rate of 123 MHz ± 11 kHz (with a CAR value of 37). To overcome free-carrier related performance degradations we have investigated reverse biased p-i-n structures, demonstrating an improvement in the pair generation rate by a factor of up to 2 with negligible impact on CAR.

Quantum interference and manipulation of entanglement in silicon wire waveguide quantum circuits

Integrated quantum photonic waveguide circuits are a promising approach to realizing future photonic quantum technologies. Here, we present an integrated photonic quantum technology platform utilizing the silicon-on- insulator material system, where quantum interference and the manipulation of quantum states of light are demonstrated in components orders of magnitude smaller than previous implementations. Two-photon quantum interference is presented in a multi-mode interference coupler, and the manipulation of entanglement is demonstrated in a Mach-Zehnder interferometer, opening the way to an all-silicon photonic quantum technology platform.

Gallium arsenide (GaAs) quantum photonic waveguide circuits

Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach–Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.

GaN directional couplers for integrated quantum photonics

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip [C. K. Hong, et al., Phys. Rev. Lett. 59, 2044 (1987)] with 96% visibility.

FDTD Simulation of Inverse 3-D Face-Centered Cubic Photonic Crystal Cavities

We present the modeling and simulation of 3-D face-centered cubic photonic crystal (PhC) cavities with various defects. We use the plane-wave expansion method to map the allowed modes and photonic bandgaps. Having determined the photonic bands we design specific defects and input-output waveguides and model the coupling between defects and waveguides using the 3-D finite-difference time-domain method. We have calculated the Q-factors and modal volumes (Veff) of the resonant cavity modes for the PhC structures made of materials including germanium (Ge), silicon (Si), gallium phosphide (GaP), titanium dioxide (TiO2), and silica (SiO2). We then use our estimates of Q and Veff to quantify the enhancement of spontaneous emission and possibility of achieving strong coupling with color centers and quantum dots.

Novel high-Q modes in thick 2D photonic crystal slabs

The periodic nature of photonic crystals (PCs) (Yablonovitch 1987 Phys. Rev. Lett. 58 2059?62; John 1987 Phys. Rev. Lett. 58 2486?9) has been extensively exploited for the past quarter of a century using photonic bandgap (PBG) effects to manipulate photons in engineered electromagnetic structures. Structures such as photonic crystal nanocavities are widely considered to be key in realizing future nanoscale optoelectronic devices. These cavities are capable of creating resonant modes with high-quality factor (Q) and small mode volume, in other words a large Purcell factor (Purcell 1946 Phys. Rev. 69 681), and have been widely researched in the two-dimensional photonic crystal slab (PCS) defect cavity configuration (Painter et?al 1999 J. Opt. Soc. Am. B 16 275?85). Here, we demonstrate for the first time how three confinement mechanisms are thought to coincide to give rise to a high-Q resonance for a slab containing a modified L3 defect where the slab thickness is such that the guiding in the slab is no longer single moded (Tandaechanurat et?al 2008 Opt. Express 16 448?55). This is in contrast to the conventional design approach, where the PCS thickness is chosen to be of the order of half a lattice constant to ensure that a PBG exists to confine cavity modes strongly within the slab (Painter et?al 1999 J. Opt. Soc. Am. B 16 275?85; Johnson et?al 1999 Phys. Rev. B 60 5751?8; Khankhoje et?al 2010 Nanotechnology 21 065202). These newly identified high-Q modes can be important in terms of the fabrication of slabs and other devices such as vertical pillars since they allow high-Q factors in thicker and more fabrication tolerant geometries.

Quantum interference in silicon waveguide circuits

Quantum interference and manipulation of quantum states of light using silicon-on-insulator waveguide circuits is presented, demonstrating the potential for a silicon quantum photonics technology platform.

Quantum integrated photonics on GaAs

We present a quantum integrated photonics platform on GaAs including waveguide single-photon sources and detectors on the same chip.

Integrated quantum photonics

This paper reviews recent advances in integrated waveguide circuits, lithographically fabricated for quantum optics. With the increase in complexity of realizable quantum architectures, the need for stability and high quality nonclassical interference within large optical circuits has become a matter of concern in modern quantum optics. Using integrated waveguide structures, we demonstrate a high performance platform from which to further develop quantum technologies and experimental quantum physics using single photons. We review the performance of directional couplers in Hong-Ou-Mandel experiments, together with inherently stable interferometers with controlled phase shifts for quantum state preparation, manipulation, and measurement as well as demonstrating the first on-chip quantum metrology experiments. These fundamental components of optical quantum circuits are used together to construct integrated linear optical realizations of two-photon quantum controlled logic gates. The high quality quantum mechanical performance observed at the single photon level signifies their central role in future optical quantum technologies.

Photonic crystal defect cavity Q-factor optimization using slab thickness

Three mechanisms are studied which give rise to a high-Q L3 cavity mode in a 2D photonic crystal slab where the in-plane photonic bandgap is closed due to increased slab thickness.