Eugene V. Solodovnik

High-Temperature Hardware: Development of a 10-kW High-Temperature, High-Power-Density Three-Phase ac-dc-ac SiC Converter

This article presents the development and experimental performance of a 10-W, all-silicon carbide (SiC), 250 °C junction temperature, high-powerdensity, three-phase ac-dc-ac converter. The electromagnetic interference filter, thermal system, high-temperature package, and gate drive design are discussed in detail. Tests confirming the feasibility and validating the theoretical basis of the prototype converter system are described. Over the last 20 years, advances in industrial and research efforts in electronic power conversion have steadily been moving toward higher power densities, which has resulted in improvements in converter system performance; reductions in physical size; and reductions in mass, weight, and cost. However, this pushes the limits of the existing control, packaging, and thermal management technology for power converter systems.

Development of a 10 kW high temperature, high power density three-phase AC-DC-AC SiC converter

This paper presents the development and experimental performance of a 10 kW, all SiC, 250°C junction temperature high-power-density three-phase ac-dc-ac converter. The electromagnetic interference filter, thermal system, high temperature package, and gate drive design are discussed in detail. Finally, tests confirming the feasibility and validating the theoretical basis of the prototype converter system are described.

Development of an all SiC high power density three-phase rectifier with interleaving

With interleaving, DPWM and SiC semiconductors, the design of a 15 kW high power density three-phase ac-dc rectifier is presented. The development of main passive components, main active components, and the system are reported in detail. With the presented technologies, the specific power density can be pushed to more than 2kW/lb.