Evan M. Smith

Optical Salisbury screen with design-tunable resonant absorption bands

A thin-film selective absorber at visible and near infra-red wavelengths is demonstrated. The structure consists of an optically thick layer of gold, a SiO2 dielectric spacer and a partially transparent gold film on top. The optical cavity so formed traps and absorbs light at a resonance wavelength determined by the film thicknesses. Observed fundamental-resonance absorption strengths are in the range 93%–97%. The absorption red-shifts and broadens as the thickness of the top gold layer is decreased with little change in absorption strength. Thus, strong absorption with design-tunable wavelength and width is achieved easily by unstructured blanket depositions. Observed angle-dependent spectra agree well with the recent three-layer analytical model of Shu et al. [Opt. Express 21, 25307 (2013)], if effective medium approximation is used to calculate the permittivity of the top gold film when it becomes discontinuous at the lowest thicknesses.

Thin-film, wide-angle, design-tunable, selective absorber from near UV to far infrared

We experimentally demonstrate a structured thin film that selectively absorbs incident electromagnetic waves in discrete bands, which by design occur in any chosen range from near UV to far infrared. The structure consists of conducting islands separated from a conducting plane by a dielectric layer. By changing dimensions and materials, we have achieved broad absorption resonances centered at 0.36, 1.1, 14, and 53 microns wavelength. Angle-dependent specular reflectivity spectra are measured using UV-visible or Fourier spectrometers. The peak absorption ranges from 85 to 98%. The absorption resonances are explained using the model of an LCR resonant circuit created by coupling between dipolar plasma resonance in the surface structures and their image dipoles in the ground plane. The resonance wavelength is proportional to the dielectric permittivity and to the linear dimension of the surface structures. These absorbers have application to thermal detectors of electromagnetic radiation.

Electrodynamic properties of aqueous spray-deposited SnO2:F films for infrared plasmonics

Abstract. Electrodynamic properties of fluorine-doped tin oxide films grown by aqueous-spray-based heterogeneous reaction on heated hydrophilic substrates were investigated with emphasis on applications to infrared plasmonics. These properties were correlated with physical ones such as crystallinity, dopant and electron concentrations, conductivity, and mobility. The degree of crystallinity for the nanocrystalline films increases with F concentration and growth temperature. The F concentration in the films is proportional to that in the starting solution. Electron concentration and Hall mobility rise more slowly with F concentration. At their highest, both F and electron concentrations are ∼2% of the Sn concentration. In more lightly doped films, the electron concentration significantly exceeds the F concentration. The achieved resistivity of the doped films is lower than for undoped SnO2 film by 20 to 750 times. The infrared complex permittivity spectrum shows a shift in plasma wavelength from 15 to 2  μm with more than two orders increase in F concentration.

Linear bolometer array using a high TCR VOx-Au film

We present a design for a low-noise bolometer linear array based on the temperature-dependent conductivity of a VOx- Au film. Typical thin film bolometers must compromise between low resistivity to limit Johnson noise and high temperature coefficient of resistivity (TCR) to maximize responsivity. Our vanadium oxide is alloyed with a small concentration of gold by co-sputtering, which gives very low resistivity and very high TCR simultaneously. The film is fabricated on an air bridge device having high thermal conductivity and small thermal time constant optimized for 30 to 60 Hz frame rates. The linear array functions as a low-power profile sensor with a modulated bias. For 1 V bias, we predict responsivity exceeding 1200 V/W. Johnson noise dominates with predicted NEP values as low as 1.0 × 10-11 W/Hz1/2. Preliminary device testing shows film resistivity below 2.5 Ω-cm with TCR exceeding -2.0%. Preliminary measurements of NEP and D* are reported.

Micro electro mechanical cantilever with electrostatically controlled tip contact

A micro-electro-mechanical system (MEMS) cantilever that lifts from the surface by electrostatic force is described. The design is composed of three conductors: a fixed buried plate, a fixed surface plate, and a moveable cantilever. All have the same square shape and are arranged parallel in a vertical stack with aligned edges. The surface plate and cantilever are biased at the same potential, and the buried plate is oppositely biased. Theoretical analysis based on values of position-dependent coefficients of capacitance and electrostatic induction from finite element method demonstrates the sign of the force on the cantilever and determines its magnitude. Video microscopy and electrical measurements demonstrate the electrostatic lifting of the cantilever in a fabricated MEMS device. The vertical displacement of the cantilever is quantified from changes in optical interference fringes, and the displacement magnitude agrees with expectations based on estimated strengths of upward electrostatic force and do...

Release of MEMS devices with hard-baked polyimide sacrificial layer

Removal of polyimides used as sacrificial layer in fabricating MEMS devices can be challenging after hardbaking, which may easily result by the end of multiple-step processing. We consider the specific commercial co-developable polyimide ProLift 100 (Brewer Science). Excessive heat hardens this material, so that during wet release in TMAH based solvents, intact sheets break free from the substrate, move around in the solution, and break delicate structures. On the other hand, dry reactive-ion etching of hard-baked ProLift is so slow, that MEMS structures are damaged from undesirably-prolonged physical bombardment by plasma ions. We found that blanket exposure to ultraviolet light allows rapid dry etch of the ProLift surrounding the desired structures without damaging them. Subsequent removal of ProLift from under the devices can then be safely performed using wet or dry etch. We demonstrate the approach on PECVD-grown silicon-oxide cantilevers of 100 micron × 100 micron area supported 2 microns above the substrate by ~100-micron-long 8-micron-wide oxide arms.

Dual band sensitivity enhancements of a VO(x) microbolometer array using a patterned gold black absorber.

Infrared-absorbing gold black has been selectively patterned onto the active surfaces of a vanadium-oxide-based infrared bolometer array. Patterning by metal lift-off relies on protection of the fragile gold black with an evaporated oxide, which preserves much of gold blacks high absorptance. This patterned gold black also survives the dry-etch removal of the sacrificial polyimide used to fabricate the air-bridge bolometers. For our fabricated devices, infrared responsivity is improved 22% in the long-wave IR and 70% in the mid-wave IR by the gold black coating, with no significant change in detector noise, using a 300°C blackbody and 80 Hz chopping rate. The increase in the time constant caused by the additional mass of gold black is ∼15%.

Vertical electrostatic force in MEMS cantilever IR sensor

A MEMS cantilever IR detector that repetitively lifts from the surface under the influence of a saw-tooth electrostatic force, where the contact duty cycle is a measure of the absorbed IR radiation, is analyzed. The design is comprised of three parallel conducting plates. Fixed buried and surface plates are held at opposite potential. A moveable cantilever is biased the same as the surface plate. Calculations based on energy methods with position-dependent capacity and electrostatic induction coefficients demonstrate the upward sign of the force on the cantilever and determine the force magnitude. 2D finite element method calculations of the local fields confirm the sign of the force and determine its distribution across the cantilever. The upward force is maximized when the surface plate is slightly larger than the other two. The electrostatic repulsion is compared with Casimir sticking force to determine the maximum useful contact area. MEMS devices were fabricated and the vertical displacement of the cantilever was observed in a number of experiments. The approach may be applied also to MEMS actuators and micromirrors.

MEMS clocking-cantilever thermal detector

We present performance calculations for a MEMS cantilever device for sensing heat input from convection or radiation. The cantilever deflects upwards under an electrostatic repulsive force from an applied periodic saw-tooth bias voltage, and returns to a null position as the bias decreases. Heat absorbed during the cycle causes the cantilever to deflect downwards, thus decreasing the time to return to the null position. In these calculations, the total deflection with respect to absorbed heat is determined and is described as a function of time. We present estimates of responsivity and noise.

Thermomechancial characterization in a radiant energy imager using null switching

Thermomechanical noise for a MEMs-based infrared detector using null switching (US patent 7977635) depends on vibrational amplitude, since IR radiation is transduced to a change in the duty cycle of a repetitively closing switch. Equipartition theorem gives a maximum rms vibrational amplitude of 45 pm for the fabricated cantilever switch at its natural frequency. This gives a worst case timing uncertainty of 700 ns and an NEP of 2 pW/Sqrt[Hz].