Robert E. Peale

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

Strong plasmon resonances have been observed in the terahertz transmission spectra (1–5 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor (HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating, which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.

Longwave plasmonics on doped silicon and silicides

The realization of plasmo-electronic integrated circuits in a silicon chip will be enabled by two new plasmonic materials that are proposed and modeled in this article. The first is ion-implanted Si (n-type or p-type) at the surface of an intrinsic Si chip. The second is a thin-layer silicide such as Pd(2)Si, NiSi, PtSi(2) WSi(2) or CoSi(2) formed at the Si chip surface. For doping concentrations of 10(20) cm(-3) and 10(21) cm(-3), our dispersion calculations show that bound surface plasmon polaritons will propagate with low loss on stripe-shaped plasmonic waveguides over the 10 to 55 microm and 2.8 to 15 microm wavelength ranges, respectively. For Pd(2)Si/Si plasmonic waveguides, the wavelength range of 0.5 to 7.5 microm is useful and here the propagation lengths are 1 to 2300 microm. For both doped and silicided guides, the SPP mode field extends much more into the air above the stripe than it does into the conductive stripe material.

Infrared surface plasmons on heavily doped silicon

wavelengths, respectively. The permittivity spectra were used to calculate SPP mode heights above the silicon surface and SPP propagation lengths. Reasonable merit criteria applied to these quantities suggest that only the heaviest doped material has sensor potential, and then mainly within the wavelength range 6 to 10 lm. Photon-to-plasmon coupling resonances, a necessary condition for sensing, were demonstrated near 10 lm wavelength for this material. The shape and position of these resonances agree well with simple analytic calculations based on the theory of Hessel and Oliner (1965). V C 2011 American Institute of Physics. [doi:10.1063/1.3672738]

Laser action in Yb3+:YCOB (Yb3+:YCa4O(BO3)3)

Abstract Infrared laser action in Yb 3+ :YCOB (Yb 3+ :YCa 4 O(BO 3 ) 3 ) is reported for the first time. Maximum output powers of ∼300 mW with a slope efficiency of 35.8% have been obtained. The observation of self-frequency doubling in this material is also reported.

Diode-pumped self-frequency doubling in a Nd3+:YCa4O(BO3)3 laser

We report efficient, diode-pumped, self-frequency doubling (SFD) in the newly developed laser crystal Nd3+:YCa4O(BO3)3. More than 350 mW of fundamental output power at 1060 nm was achieved with a slope efficiency of 51%. With one watt of absorbed pump power, 62 mW of green cw laser emission at 530 nm was observed with proper phase matching. This initial performance, and the good optical properties of the crystalline host, are encouraging for the development of a high power diode-pumped SFD visible light laser source.

IR permittivities for silicides and doped silicon

The complex permittivity for Pt, Pd, Ni, and Ti-silicide films as well as heavily doped p- and n-type silicon were determined by ellipsometry over the energy range 0.031 eV to 4.0 eV. Fits to the Drude model gave bulk plasma and relaxation frequencies. Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy, secondary ion mass spectrometry, and four-point probe measurements complemented the optical characterization. Calculations from measured permittivities of waveguide loss and mode confinement suggest that the considered materials are better suited for long-wavelength surface-plasmon-polariton waveguide applications than metal films.

Investigation of diode-pumped, self-frequency doubled rgb lasers from Nd:YCOB crystals

Abstract As a new self-frequency doubling crystal, Nd:YCOB demonstrates a great potential for diode-pumped cw visible solid state lasers in a simple hemispherical cavity. We previously reported 62 mW cw green output with less than 1 W diode pump power absorbed in the crystal. Now we present more than 16 mW red cw laser at 666 nm from 5% Nd:YCOB crystal. As far as we know, it is the first time that diode-pumped cw red lasing is achieved by self-frequency doubling. Our effort on blue laser is also addressed.

EXAFS study of rare-earth element coordination in calcite

Extended X-ray absorption fine-structure (EXAFS) spectroscopy is used to characterize the local coordination of selected rare-earth elements (Nd3+, Sm3+, Dy3+, Yb3+) coprecipitated with calcite in minor concentrations from room-temperature aqueous solutions. Fitting results confirm substitution in the Ca site, but first-shell Nd-O and Sm-O distances are longer than the Ca-O distance in calcite and longer than what is consistent with ionic radii sums for sixfold coordination in the octahedral Ca site. In contrast, first-shell Dy-O and Yb-O distances are shorter than the Ca-O distance and are consistent with ionic radii sums for sixfold coordination. Comparison of Nd-O and Sm-O bond lengths with those in lanthanide sesquioxides and with ionic radii trends across the lanthanide series suggests that Nd3+ and Sm3+ have sevenfold coordination in a modified Ca site in calcite. This would require some disruption of the local structure, with an expected decrease in stability, and possibly a different charge compensation mechanism between Nd and Sm vs. Yb and Dy. A possible explanation for the increased coordination for the larger rare-earth elements involves bidentate ligation from a CO3 group. Because trivalent actinides such as Am3+ and Cm3+ have ionic radii similar to Nd3+, their incorporation in calcite may result in a similar defect structure.

Neutron transmutation doped far-infrared p-Ge laser

A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping (NTD) is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD significantly improves average gain. The stronger ionized impurity scattering due to high compensation in NTD Ge is shown to have insignificant negative impact on the gain at the moderate doping concentrations sufficient for laser operation. Experimentally, this first NTD laser is found to have lower current-density lasing threshold than the best of a number of melt-doped laser crystals studied for comparison.

Long-wave infrared surface plasmon grating coupler

We present a simplified analytic formula that may be used to design gratings intended to couple long-wave infrared radiation to surface plasmons. It is based on the theory of Hessel and Oliner (1965). The recipe is semiempirical, in that it requires knowledge of a surface-impedance modulation amplitude, which is found here as a function of the grating groove depth and the wavelength for silver lamellar gratings at CO(2) laser wavelengths. The optimum groove depth for photon-to-surface-plasmon energy conversion was found by experiment and calculation to be approximately 10%-15% of the wavelength. This value is about twice what has been reported previously in the visible spectral range for sinusoidal grating profiles.