Evgheni Strelcov

Gas Sensor Based on Metal−Insulator Transition in VO2 Nanowire Thermistor

Using temperature driven sharp metal-insulator phase transition in single crystal VO(2) nanowires, the realization of a novel gas sensing concept has been tested. Varying the temperature of the nanowire close to the transition edge, the conductance of the nanowire becomes extremely responsive to the tiny changes in molecular composition, pressure, and temperature of the ambient gas environment. This gas sensing analog of the transition edge sensor radiometry used in astrophysics opens new opportunities in gas sensorics.

Symmetry relationship and strain-induced transitions between insulating M1 and M2 and metallic R phases of vanadium dioxide.

The ability to synthesize VO2 in the form of single-crystalline nanobeams and nano- and microcrystals uncovered a number of previously unknown aspects of the metal-insulator transition (MIT) in this oxide. In particular, several reports demonstrated that the MIT can proceed through competition between two monoclinic (insulating) phases M1 and M2 and the tetragonal (metallic) R phase under influence of strain. The nature of such phase behavior has been not identified. Here we show that the competition between M1 and M2 phases is purely lattice-symmetry-driven. Within the framework of the Ginzburg-Landau formalism, both M phases correspond to different directions of the same four-component structural order parameter, and as a consequence, the M2 phase can appear under a small perturbation of the M1 structure such as doping or stress. We analyze the strain-controlled phase diagram of VO2 in the vicinity of the R-M2-M1 triple point using the Ginzburg-Landau formalism and identify and experimentally verify the pathways for strain-control of the transition. These insights open the door toward more systematic approaches to synthesis of VO2 nanostructures in desired phase states and to use of external fields in the control of the VO2 phase states. Additionally, we report observation of the triclinic T phase at the heterophase domain boundaries in strained quasi-two-dimensional VO2 nanoplatelets, and theoretically predict phases that have not been previously observed.

Interplay between Ferroelastic and Metal−Insulator Phase Transitions in Strained Quasi-Two-Dimensional VO2 Nanoplatelets

Formation of ferroelastic twin domains in vanadium dioxide (VO(2)) nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline VO(2) quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the 2D geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate the possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and nontrivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that a complete picture of the phase transitions in single-crystalline and disordered VO(2) structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.

Coupling Nanowire Chemiresistors with MEMS Microhotplate Gas Sensing Platforms

Recent advances in nanotechnology have yielded materials and structures that offer great potential for improving the sensitivity, selectivity, stability, and speed of next-generation chemical gas sensors. To fabricate practical devices, the “bottom-up” approach of producing nanoscale sensing elements must be integrated with the “top-down” methodology currently dominating microtechnology. In this letter, the authors illustrate this approach by coupling a single-crystal SnO2 nanowire sensing element with a microhotplate gas sensor platform. The sensing results obtained using this prototype sensor demonstrate encouraging performance aspects including reduced operating temperature, reduced power consumption, good stability, and enhanced sensitivity.

Drop-casted self-assembling graphene oxide membranes for scanning electron microscopy on wet and dense gaseous samples.

Graphene oxide sheets dispersed in water and many other solvents can spontaneously assemble into a surface film covering an evaporating droplet due to their amphiphilicity. Thus, graphene oxide membranes with controllable thickness suspended over an orifice have been directly fabricated using a simple drop-cast approach. Mechanical properties and electron transparency tests of these membranes show their use as electron transparent, but molecularly impenetrable, windows for environmental electron microscopy in liquids and dense gaseous media. The foreseeable, broader application of this drop-cast window methodology is the creation of access spots for electron probes to study isolated microsamples in their natural, undisrupted state within the interior of prefabricated devices (such as microfluidic chips or sealed containers of biological, chemically reactive, toxic, or forensic materials).

Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric

Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.

Doping-Based Stabilization of the M2 Phase in Free-Standing VO2 Nanostructures at Room Temperature

A new high-yield method of doping VO(2) nanostructures with aluminum is proposed, which renders possible stabilization of the monoclinic M2 phase in free-standing nanoplatelets in ambient conditions and opens an opportunity for realization of a purely electronic Mott transition field-effect transistor without an accompanying structural transition. The synthesized free-standing M2-phase nanostructures are shown to have very high crystallinity and an extremely sharp temperature-driven metal-insulator transition. A combination of X-ray microdiffraction, micro-Raman spectroscopy, energy-dispersive X-ray spectroscopy, and four-probe electrical measurements allowed thorough characterization of the doped nanostructures. Light is shed onto some aspects of the nanostructure growth, and the temperature-doping level phase diagram is established.

Band Excitation in Scanning Probe Microscopy: Recognition and Functional Imaging

Field confinement at the junction between a biased scanning probe microscopes tip and solid surface enables local probing of various bias-induced transformations, such as polarization switching, ionic motion, and electrochemical reactions. The nanoscale size of the biased region, smaller or comparable to that of features such as grain boundaries and dislocations, potentially allows for the study of kinetics and thermodynamics at the level of a single defect. In contrast to classical statistically averaged approaches, this approach allows one to link structure to functionality and deterministically decipher associated mesoscopic and atomistic mechanisms. Furthermore, responses measured as a function of frequency and bias can serve as a fingerprint of local material functionality, allowing for local recognition imaging of inorganic and biological systems. This article reviews current progress in multidimensional scanning probe microscopy techniques based on band excitation time and voltage spectroscopies, including discussions on data acquisition, dimensionality reduction, and visualization, along with future challenges and opportunities for the field.

Electromechanical actuation and current-induced metastable states in suspended single-crystalline VO2 nanoplatelets

Current-induced electromechanical actuation enabled by the metal-insulator transition in VO(2) nanoplatelets is demonstrated. The Joule heating by a sufficient current flowing through suspended nanoplatelets results in formation of heterophase domain patterns and is accompanied by nanoplatelet deformation. The actuation action can be achieved in a wide temperature range below the bulk phase transition temperature (68 °C). The observed current-sustained heterophase domain structures should be interpreted as distinct metastable states in free-standing and end-clamped VO(2) samples. We analyze the main prerequisites for the realization of a current-controlled actuator based on the proposed concept.

CH 3 NH 3 PbI 3 perovskites: Ferroelasticity revealed

Evidence and control of ferroelastic (but not ferroelectric) domains in CH3NH3PbI3 perovskite are provided. Ferroelectricity has been proposed as a plausible mechanism to explain the high photovoltaic conversion efficiency in organic-inorganic perovskites; however, convincing experimental evidence in support of this hypothesis is still missing. Identifying and distinguishing ferroelectricity from other properties, such as piezoelectricity, ferroelasticity, etc., is typically nontrivial because these phenomena can coexist in many materials. In this work, a combination of microscopic and nanoscale techniques provides solid evidence for the existence of ferroelastic domains in both CH3NH3PbI3 polycrystalline films and single crystals in the pristine state and under applied stress. Experiments show that the configuration of CH3NH3PbI3 ferroelastic domains in single crystals and polycrystalline films can be controlled with applied stress, suggesting that strain engineering may be used to tune the properties of this material. No evidence of concomitant ferroelectricity was observed. Because grain boundaries have an impact on the long-term stability of organic-inorganic perovskite devices, and because the ferroelastic domain boundaries may differ from regular grain boundaries, the discovery of ferroelasticity provides a new variable to consider in the quest for improving their stability and enabling their widespread adoption.