J. D. Budai

High critical current density superconducting tapes by epitaxial deposition of YBa2Cu3Ox thick films on biaxially textured metals

A method to obtain long lengths of flexible, biaxially oriented substrates with smooth, chemically compatible surfaces for epitaxial growth of high‐temperature superconductors is reported. The technique uses well established, industrially scalable, thermomechanical processes to impart a strong biaxial texture to a base metal. This is followed by vapor deposition of epitaxial buffer layers (metal and/or ceramic) to yield chemically compatible surfaces. Epitaxial YBa2Cu3Ox films grown on such substrates have critical current densities exceeding 105 A/cm2 at 77 K in zero field and have field dependencies similar to epitaxial films on single crystal ceramic substrates. Deposited conductors made using this technique offer a potential route for the fabrication of long lengths of high‐Jc wire capable of carrying high currents in high magnetic fields and at elevated temperatures.

Epitaxial YBa2Cu3O7 on Biaxially Textured Nickel (001): An Approach to Superconducting Tapes with High Critical Current Density

In-plane—aligned, c axis—oriented YBa2Cu3O7 (YBCO) films with superconducting critical current densities Jc as high as 700,000 amperes per square centimeter at 77 kelvin have been grown on thermomechanically rolled-textured nickel (001) tapes by pulsed-laser deposition. Epitaxial growth of oxide buffer layers directly on biaxially textured nickel, formed by recrystallization of cold-rolled pure nickel, made possible the growth of YBCO films 1.5 micrometers thick with superconducting properties that are comparable to those observed for epitaxial films on single-crystal oxide substrates. This result represents a viable approach for the production of long superconducting tapes for high-current, high-field applications at 77 kelvin.

Advances in wide bandgap materials for semiconductor spintronics

Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission. The relatively new field of semiconductor spintronics seeks, in addition, to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. The ability to control of spin injection, transport and detection leads to the potential for new classes of ultra-low power, high speed memory, logic and photonic devices. The utility of such devices depends on the availability of materials with practical (>300 K) magnetic ordering temperatures. In this paper, we summarize recent progress in dilute magnetic semiconductors (DMS) such as (Ga, Mn)N, (Ga, Mn)P, (Zn, Mn)O and (Zn, Mn)SiGeN2 exhibiting room temperature ferromagnetism, the origins of the magnetism and its potential applications in novel devices such as spin-polarized light emitters and spin field effect transistors. # 2003 Elsevier Science B.V. All rights reserved.

Effect of oxygen pressure on the synthesis of YBa2Cu3O7−x thin films by post‐deposition annealing

The effect of ambient oxygen pressure on the synthesis of epitaxial YBa2Cu3O7−x films on (100) SrTiO3 substrates by post‐deposition annealing of amorphous precursor films was studied for oxygen partial pressures pO2 between 1.0 and 8.0×10−5 atm and annealing temperatures between 890 and 650 °C. A pO2−1/T diagram containing recent literature data regarding YBa2Cu3O7−x oxygen stoichiometry, phase stability, and liquid‐phase formation was compiled to provide guidance for the selection and interpretation of annealing conditions. The results evidence a strong dependency of growth properties on the oxygen pressure with enhanced c‐oriented epitaxy at lower pO2 values. A particularly interesting result is the formation of predominantly c‐oriented films at 740 °C and pO2=2.6×10−4 atm (0.2 Torr). Similar to YBa2Cu3O7−x films produced by in situ laser ablation at the same temperature and oxygen pressure, the films exhibited low ion channeling yields (χmin<0.1) and a dense (smooth) surface morphology, while critical currents at 77 K were well in excess of 1 MA/cm2. From the observed systematic variation of structural film properties with synthesis conditions, annealing lines were derived indicating (T‐pO2) combinations for either c‐ or a‐oriented epitaxial growth. A comparison is made between these lines and synthesis conditions for in situ film growth as compiled recently by Hammond and Bormann [Physica C 162–169, 703 (1989)].The effect of ambient oxygen pressure on the synthesis of epitaxial YBa2Cu3O7−x films on (100) SrTiO3 substrates by post‐deposition annealing of amorphous precursor films was studied for oxygen partial pressures pO2 between 1.0 and 8.0×10−5 atm and annealing temperatures between 890 and 650 °C. A pO2−1/T diagram containing recent literature data regarding YBa2Cu3O7−x oxygen stoichiometry, phase stability, and liquid‐phase formation was compiled to provide guidance for the selection and interpretation of annealing conditions. The results evidence a strong dependency of growth properties on the oxygen pressure with enhanced c‐oriented epitaxy at lower pO2 values. A particularly interesting result is the formation of predominantly c‐oriented films at 740 °C and pO2=2.6×10−4 atm (0.2 Torr). Similar to YBa2Cu3O7−x films produced by in situ laser ablation at the same temperature and oxygen pressure, the films exhibited low ion channeling yields (χmin<0.1) and a dense (smooth) surface morphology, while critical ...

Ferromagnetism in cobalt-implanted ZnO

The magnetic and structural properties of cobalt-implanted ZnO single crystals are reported. High-quality, (110)-oriented single-crystal Sn-doped ZnO substrates were implanted at ∼350 °C with Co to yield transition metal concentrations of 3–5 at. % in the near-surface (∼2000 A) region. After implantation, the samples were subject to a 5 min rapid thermal annealing at 700 °C. Magnetization measurements indicate ferromagnetic behavior, with hysteresis observed in the M vs H behavior at T=5 K. Coercive fields were ⩽100 Oe at this measurement temperature. Temperature-dependent magnetization measurements showed evidence for ordering temperatures of >300 K, although hysteresis in the M vs H behavior was not observed at room temperature. Four-circle x-ray diffraction results indicate the presence of (110)-oriented hexagonal phase Co in the ZnO matrix. From the 2θ full width at half maximum (FWHM) of the Co (110) peak, the nanocrystal size is estimated to be ∼3.5 nm, which is below the superparamagnetic limit at ...

Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition

ZnO films were synthesized on GaAs substrates at different growth conditions by pulse laser deposition. High-purity (99.999%) oxygen was used as the ambient gas. The pressure of the ambient oxygen gas for ZnO film growth was varied from 20 to 50 mTorr, and the growth temperature from 300 to 450 °C. ZnO films showed very strong bound exciton peaks located between 3.37 and 3.35 eV. The full width at half maximum of the bound exciton peak is less than 5 meV. These results indicate ZnO films on GaAs substrates can be used for optical devices such as light-emitting diodes. The other significant properties of textured ZnO films on GaAs substrates are described.

Spectroscopic ellipsometry of thin film and bulk anatase (TiO2)

Spectroscopic ellipsometry (SE) measurements were made on thin-film and single-crystal TiO2 anatase using a two-modulator generalized ellipsometer. The TiO2 films were epitaxially stabilized on a LaAlO3 substrate in the anatase crystal structure using reactive sputter deposition. The films were highly crystalline, possessing a “stepped surface” morphology indicative of atomic layer-by-layer growth. The SE results for the anatase film indicate that the material is essentially oriented with the c axis perpendicular to the substrate, but there is some anisotropy near the interface and the surface. Corrugations of the film surface, as observed using atomic force microscopy, are consistent with a surface structure needed to create cross polarization. Accurate values of the optical functions of crystalline anatase were obtained above and below the band edge using SE. Above the band edge, both the ordinary and extraordinary complex dielectric functions exhibited two critical points.

Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation

Abstract This paper describes the development of two buffer layer architectures on rolled-Ni substrates using an electron beam evaporation technique. The first buffer layer architecture consists of an epitaxial laminate of CeO 2 /Pd/Ni. The second alternative buffer layer consistes of an epitaxial laminate of YSZ/CeO 2 /Ni. The cube (100) texture in the Ni was produced by cold-rolling followed by recrystallization. The CeO 2 films were grown epitaxially on both Pd-buffered and textured-Ni substrates. The YSZ films were grown epitaxially on CeO 2 -buffered Ni substrates. The crystallographic orientation of the Pd, CeO 2 , and YSZ films were all (100). We also studied the effect of CeO 2 layer thickness and crack formation on textured-Ni substrates. The layer thickness was found to be critical. For some thickness, cracks formed in the CeO 2 layer. The presence of YSZ layers on the CeO 2 layers seem alleviate the cracks that are formed underneath. Our SEM studies showed that both CeO 2 (3–10 nm thick underlayer) and YSZ layers were smooth and continuous.

The Race to X-ray Microbeam and Nanobeam Science

X-ray microbeams are an emerging characterization tool with broad implications for science, ranging from materials structure and dynamics, to geophysics and environmental science, to biophysics and protein crystallography. We describe how submicrometer hard x-ray beams with the ability to penetrate tens to hundreds of micrometers into most materials and with the ability to determine local composition, chemistry, and (crystal) structure can characterize buried sample volumes and small samples in their natural or extreme environments. Beams less than 10 nanometers have already been demonstrated, and the practical limit for hard x-ray beam size, the limit to trace-element sensitivity, and the ultimate limitations associated with near-atomic structure determinations are the subject of ongoing research.

Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices

Nanocrystals of group‐IV semiconductor materials (Si, Ge, and SiGe) have been fabricated in SiO2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystals has been studied by transmission electron microscopy. Critical influences of the annealing temperatures and implantation doses on the nanocrystal size distributions are demonstrated with the Ge‐implanted systems. Significant roughening of the nanocrystals occurs when the annealing temperature is raised above the melting temperature of the implanted semiconductor material.