Eyal En Gad

Constant-Weight Gray Codes for Local Rank Modulation

We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. The local rank-modulation, as a generalization of the rank-modulation scheme, has been recently suggested as a way of storing information in flash memory. We study constant-weight Gray codes for the local rank-modulation scheme in order to simulate conventional multilevel flash cells while retaining the benefits of rank modulation. We describe a construction for a codes of rate tending to 1.

Joint rewriting and error correction in write-once memories

Both rewriting and error correction are important technologies for non-volatile memories, especially flash memories. However, coding schemes that combine them have been limited. This paper presents a new coding scheme that combines rewriting and error correction for the write-once memory model. Its construction is based on polar codes, and it supports any number of rewrites and corrects a substantial number of errors. The code is analyzed for the binary symmetric channel, and experimental results verify its performance. The results can be extended to multi-level cells and more general noise models.

Rank-modulation rewriting codes for flash memories

Current flash memory technology is focused on cost minimization of the stored capacity. However, the resulting approach supports a relatively small number of write-erase cycles. This technology is effective for consumer devices (smart-phones and cameras) where the number of write-erase cycles is small, however, it is not economical for enterprise storage systems that require a large number of lifetime writes. Our proposed approach for alleviating this problem consists of the efficient integration of two key ideas: (i) improving reliability and endurance by representing the information using relative values via the rank modulation scheme and (ii) increasing the overall (lifetime) capacity of the flash device via rewriting codes, namely, performing multiple writes per cell before erasure. We propose a new scheme that combines rank-modulation with rewriting. The key benefits of the new scheme include: (i) the ability to store close to 2 bits per cell on each write, and rewrite the memory close to q times, where q is the number of levels in each cell, and (ii) efficient encoding and decoding algorithms that use the recently proposed polar WOM codes.

Compressed encoding for rank modulation

Rank modulation has been recently proposed as a scheme for storing information in flash memories. While rank modulation has advantages in improving write speed and endurance, the current encoding approach is based on the “push to the top” operation that is not efficient in the general case. We propose a new encoding procedure where a cell level is raised to be higher than the minimal necessary subset -instead of all - of the other cell levels. This new procedure leads to a significantly more compressed (lower charge levels) encoding. We derive an upper bound for a family of codes that utilize the proposed encoding procedure, and consider code constructions that achieve that bound for several special cases.

Repair-optimal MDS array codes over GF(2)

Maximum-distance separable (MDS) array codes with high rate and an optimal repair property were introduced recently. These codes could be applied in distributed storage systems, where they minimize the communication and disk access required for the recovery of failed nodes. However, the encoding and decoding algorithms of the proposed codes use arithmetic over finite fields of order greater than 2, which could result in a complex implementation. In this work, we present a construction of 2-parity MDS array codes, that allow for optimal repair of a failed information node using XOR operations only. The reduction of the field order is achieved by allowing more parity bits to be updated when a single information bit is being changed by the user.

Trade-offs between instantaneous and total capacity in multi-cell flash memories

The limited endurance of flash memories is a major design concern for enterprise storage systems. We propose a method to increase it by using relative (as opposed to fixed) cell levels and by representing the information with Write Asymmetric Memory (WAM) codes. Overall, our new method enables faster writes, improved reliability as well as improved endurance by allowing multiple writes between block erasures. We study the capacity of the new WAM codes with relative levels, where the information is represented by multiset permutations induced by the charge levels, and show that it achieves the capacity of any other WAM codes with the same number of writes. Specifically, we prove that it has the potential to double the total capacity of the memory. Since capacity can be achieved only with cells that have a large number of levels, we propose a new architecture that consists of multi-cells - each an aggregation of a number of floating gate transistors.

Rewriting flash memories by message passing

This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory.We consider a rewriting model that is of practical interest to flash applications where only the second write uses WOM codes. Our WOM code construction is based on binary erasure quantization with LDGM codes, where the rewriting uses message passing and has potential to share the efficient hardware implementations with LDPC codes in practice. We show that the coding scheme achieves the capacity of the rewriting model. Extensive simulations show that the rewriting performance of our scheme compares favorably with that of polar WOM code in the rate region where high rewriting success probability is desired. We further augment our coding schemes with error correction capability. By drawing a connection to the conjugate code pairs studied in the context of quantum error correction, we develop a general framework for constructing error-correction WOM codes. Under this framework, we give an explicit construction of WOM codes whose codewords are contained in BCH codes.

Polar coding for noisy write-once memories

We consider the noisy write-once memory (WOM) model to capture the behavior of data-storage devices such as flash memories. The noisy WOM is an asymmetric channel model with non-causal state information at the encoder. We show that a nesting of non-linear polar codes achieves the corresponding Gelfand-Pinsker bound with polynomial complexity.

On a construction for constant-weight Gray codes for local rank modulation

We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. The local rank-modulation, as a generalization of the rank-modulation scheme, has been recently suggested as a way of storing information in flash memory. We study constant-weight Gray codes for the local rank-modulation scheme in order to simulate conventional multilevel flash cells while retaining the benefits of rank modulation. We describe a construction for a codes of rate tending to 1.

Asymmetric Error Correction and Flash-Memory Rewriting Using Polar Codes

We propose efficient coding schemes for two communication settings: 1) asymmetric channels and 2) channels with an informed encoder. These settings are important in non-volatile memories, as well as optical and broadcast communication. The schemes are based on non-linear polar codes, and they build on and improve recent work on these settings. In asymmetric channels, we tackle the exponential storage requirement of previously known schemes that resulted from the use of large Boolean functions. We propose an improved scheme that achieves the capacity of asymmetric channels with polynomial computational complexity and storage requirement. The proposed non-linear scheme is then generalized to the setting of channel coding with an informed encoder using a multicoding technique. We consider specific instances of the scheme for flash memories that incorporate error-correction capabilities together with rewriting. Since the considered codes are non-linear, they eliminate the requirement of previously known schemes (called polar write-once-memory codes) for shared randomness between the encoder and the decoder. Finally, we mention that the multicoding scheme is also useful for broadcast communication in Martons region, improving upon previous schemes for this setting.