F Arrouy

Local electrochemical oxidation/reduction: First step towards a new lithography?

Using c‐axis La2CuO4 thin films, we first demonstrate that the electrochemical oxidation mainly occurs along the c axis. Then we induce oxygen‐rich regions electrochemically into an otherwise oxygen‐deficient matrix. On a microscopic scale the extra oxygen introduced creates metallic and/or superconducting regions in the insulating matrix. Contrary to other lithographic techniques in which large amounts of material are either removed or deposited, this technique does not induce significant height differences.

Growth and electrochemical oxidation of MBE-grown c-axis La2CuO4 thin films on different substrates

Abstract The growth and subsequent electrochemical oxygen intercalation of c -axis La 2 CuO 4 + δ thin films on substrates with different lattice mismatch [SrTiO 1 (001) (+3.03%), NdGaO 1 (001) (+1.90%). LaAlO 3 (001) (−0.05%) and SrLaAlO 4 (001) (−0.95%) substrates] are compared. The films grown on the different substrates can all be oxidized electrochemically, but their structural and transport properties differ vastly. The results can roughly be divided into two categories, i.e., those of films grown with a compressive or a tensile lattice mismatch where the former have a larger c -axis latice parameter and better transport properties.

Schiff base precursor compounds for the chemical beam epitaxy of oxide thin films. I. Deposition of CuO on MgO[001] using copper (II) bis(benzoylacetone)‐ethylendiimine

A new precursor compound for the deposition of copper oxide thin films under molecular beam conditions, copper bis(benzoylacetone)‐ethylenediimine, has been characterized by thermal analysis and in situ mass spectrometry. Its stability and decomposition behavior are reported as well as its use for the deposition of epitaxial copper oxide thin films on MgO.

Transmission electron microscopy investigations of defects in molecular beam epitaxy-grown oxide films

Abstract With a view to increasing the superconductive transition temperature of thin films of La 2 CuO 4 grown by molecular beam epitaxy, films were grown on substrates of lattice parameters such that the film-substrate misfit became small and tensile, or compressive. The microstructure of these films was investigated using transmission electron microscopy and qualitative correlations with physical properties suggested.