F. Devaux

Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz

A single-mode modulator was realized from an AP-MOCVD grown structure. The multiple-quantum-well electroabsorptive material is made of shallow InGaAsP wells separated by InGaAsP barriers. It exhibits at 1.54 mu m (TE) a 17 dB extinction ratio for a 3 V drive voltage, a 2.7 dB on-state loss and a small-signal bandwidth over 20 GHz with 1-2 mW of coupled optical power. >

Extinction ratio of cross-gain modulated multistage wavelength converters: model and experiments

Extinction ratio conservation, wide dynamic range, and large operating wavelength window are important features for all-optical wavelength converters. Practical converters may probably be multistage devices and have to be precisely modeled. We present an experimental analysis and phenomenological modeling of single- and multistage wavelength converters using cross-gain modulation in polarization insensitive multiquantum-well optical amplifiers. One of the studied double-stage converters is able to produce a large extinction ratio improvement with a regeneration factor higher than 1.5 for any conversion in the 1.53-1.56-/spl mu/m window. The phenomenological model yields a very good agreement with the experimental results.

High-speed tandem of MQW modulators for coded pulse generation with 14-dB fiber-to-fiber gain

We report on a tandem of electroabsorption modulators integrated with an amplifier by the identical active layer (IAL) approach. A 14 dB fiber-to-fiber is obtained by the use of constant As-P ratio MQW active layer and operation at 10 Gb/s is demonstrated. A record modulator saturation power of 35 mW is also reported.

Electroabsorption modulator based on Wannier–Stark localization with 20 GHz/V efficiency

We report on a ridge‐waveguide modulator based on Wannier–Stark localization in an InGaAs/InAlAs superlattice. Anisotropic absorption is measured and efficient modulation is obtained in the low‐field domain and in the high‐field domain with TE‐polarized light. The device exhibits outstanding HF characteristics: in terms of bandwidth‐to‐drive‐voltage ratio, we find that the Wannier–Stark localization is far more efficient than the quantum Stark effect.

20 Gbit/s high-performance integrated MQW TANDEM modulators and amplifier for soliton generation and coding

We report on the integration of two InGaAsP-InGaAsP MQW electroabsorption ridge modulators and an amplifier on the same active layer. The two modulators are separated by a 500-/spl mu/m ridge waveguide optical amplifier, in order to prevent electrical crosstalk, and to compensate for optical losses. The first modulator is used as a soliton generator, and the second codes the generated pulses. The amplifier showed 8.2-dB gain for 120-mA injected current. This allowed a low fiber to fiber insertion loss of 9 dB for the tandem. We present here for the first time to our knowledge, a 20 Gbit/s operation for a tandem-amplifier device, together with transmission experiments.<<ETX>>

Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser

We present the technical approach and the preliminary device results on the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer consists of a lattice matched InGaAs-InAlAs superlattice (SL) grown by solid source MBE. It is butt-coupled to a laser grown by AP-MOVPE whose active layer includes a strained InGaAsP-InGaAsP MQW stack. Device results cover static performances of integrated lasers and modulators, and measurements of high frequency characteristics (small signal bandwidth and 10 Gb/s eye diagram).<<ETX>>

Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer

Summary form only given. A novel and very simple approach is demonstrated for strained layer InGaAsP MQW distributed feedback laser-electroabsorption modulator monolithic integration with very high performance at 1.5 /spl mu/m (13.6 dB extinction ratio at 1.5 V operating voltage for a 70 /spl mu/m long modulator).