F. Gaborit

Novel scheme for simple label-swapping employing XOR logic in an integrated interferometric wavelength converter

We present a novel scheme for all-optical label swapping that relies on logic exclusive-OR (XOR) in an integrated SOA-based Michelson interferometer. The scheme allows simple, efficient and mechanically stable operation, while relaxing the requirements on packet format and simplifying switch management. Furthermore, the label-swapping scheme does not require a guard band between the header and payload to perform alterations in the header. The method, which incorporates simultaneous wavelength conversion, is demonstrated at 10 Gb/s with negligible penalty and a high output signal-to-ASE ratio of /spl sim/35 dB.

1-mW CW-RT monolithic VCSEL at 1.55 μm

In this letter, we demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 /spl mu/m using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two original approaches. The first originality consists in the growth of a metamorphic GaAs-AlAs Bragg mirror directly on an InP-based cavity. The second novel idea is to use a tunnel junction for current injection. Moreover by using these two approaches the processing is very simple and, therefore, fulfills the goal for low-cost laser production in access and interconnections applications.

Design optimization of all-active Mach-Zehnder wavelength converters

An integrated all-active Mach-Zehnder wavelength converter, optimized for 10-Gb/s counterpropagative operation, is described. The various active sections of the device were separately designed, taking into account their required functions as well as the constraints imposed by the all-active integration. The resulting optimizations are discussed, and the predicted performance parameters confirmed by experimental results.

High quality InP and In1-xGaxAsyP1-y grown by gas source MBE

The growth of high quality InP and In1−xGaxAsyP1−y by gas source molecular beam epitaxy is reported. 77 K mobilities up to 112,000 cm2/V⋯s for high purity InP have been measured. Fe-doped semi-insulating InP has been grown using an iron effusion dell, and resistivities as high as 109 Ω cm have been obtained. Selective epitaxy of InP on Si3N4-patterned substrates is also presented.

Experimental investigation at 10 Gb/s of the noise suppression capabilities in a pass-through configuration in SOA-based interferometric structures

We experimentally investigate a pass-through scheme for all-optical noise suppression in a SOA-based interferometric structure at 10 Gb/s. An input power dynamic range of /spl sim/8 dB as well as a noise suppression capability of /spl sim/4.5 dB has been demonstrated. Furthermore, the transmission properties have been investigated showing a small pre-amplified penalty of /spl sim/0.3 dB after transmission over 31 km of standard single mode fiber.

Ridge laser with spot-size converter in a single epitaxial step for high coupling efficiency to single-mode fibers

We report on a 1.55-/spl mu/m InGaAsP MQW laser diode with an integrated spot-size converter fabricated in a single epitaxial step using conventional photolithography. The laser structure uses a conventional ridge guide for the active layers and a second larger ridge for the passive waveguide. Low-beam divergence of typically 9/spl deg//spl times/9/spl deg/ results in about 3-dB coupling losses, with a cleaved optical fiber.

First array of 8 CG-SOA gates for large-scale WDM space switches

We report here on an 8 CG-SOA gate array with uniform characteristics for WDM large-scale space switches operating at 1550 nm. The mean fiber-to-fiber gain and noise figure n/sub sp//C/sub 1/ yield 19 dB and 6.6 dB at 200 mA, respectively.

All-active dual-order mode Mach-Zehnder wavelength converter for power-efficient, co-propagative operation

Power-efficient wavelength conversion in the co-propagative configuration, with high input signal rejection, is reported using a novel all-active dual-order mode Mach-Zehnder wavelength converter. A dual-order mode Mach-Zehnder wavelength converter has been realised for the first time using exclusively active waveguides. Such an all-active implementation is highly advantageous from a fabrication effort point of view. Almost penalty-free conversion was obtained at 2.5Gb/s in the co-propagative mode, with high input signal rejection.

Growth of semi-insulating InP by GSMBE

Abstract Fe doped semi-insulating InP layers have been grown by gas source MBE with a solid iron source. Structure as n-i-n, p-i-n and p-n-i-n were characterized by I ( V ) measurements and secondary ion mass spectroscopy profiling (SIMS). As shown by SIMS, uniform Fe doping and abrupt transitions are achieved for the different structures studied. Resistivities as high as 1.5×10 9 Ω cm are determined from I ( V ) curves for Fe concentrations in the 10 17 cm -3 range. Lasers with semi-insulating layers have been realized for the first time by gas source MBE. Preliminary results show power emission of 43 mW, without antireflecting coating, comparable to state-of-the-art characteristics.

Low-penalty 10 Gbit/s operation of polarization-insensitive Mach-Zehnder wavelength converters based on bulk-tensile active material

Summary form only given. Interferometric structures based on semiconductor optical amplifiers (SOAs) have emerged as promising candidates for all-optical wavelength conversion applications, because they can deliver strong extinction ratio enhancement for both wavelength down- and up-conversion. Here we believe we report the first demonstration of nearly penalty-free 10 Gbit/s wavelength conversion using all-active bulk-tensile Mach-Zehnder wavelength converters.