F. Giubileo

Field emission from single and few-layer graphene flakes

We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were performed in a scanning electron microscope chamber equipped with nanoprobes which allowed local measurement of the field emission current. We achieved field emission currents up to 1 μA from the flat part of graphene flakes at applied fields of few hundred volt per micrometer. We found that the emission process is stable over a period of several hours and that it is well described by a Fowler–Nordheim model for currents over five orders of magnitude.

Multiwalled carbon nanotube films as small-sized temperature sensors

We present the fabrication of thick and dense carbon nanotube networks in the form of freestanding films (CNTFs) and the study of their electric resistance as a function of the temperature, from 4 to 420 K. A nonmetallic behavior with a monotonic R(T) and a temperature coefficient of resistance around −7×10−4 K−1 is generally observed. A behavioral accordance of the CNTF conductance with the temperature measured by a solid-state thermistor (ZnNO, Si, or Pt) is demonstrated, suggesting the possibility of using CNTFs as temperature small-sized (freely scalable) sensors, besides being confirmed by a wide range of sensitivity, fast response, and good stability and durability. Concerning electric behavior, we also underline that a transition from nonmetal to metal slightly below 273 K has been rarely observed. A model involving regions of highly anisotropic metallic conduction separated by tunneling barrier regions can explain the nonmetallic to metallic crossover based on the competing mechanisms of the metal...

Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors

We discuss the origin of an additional dip other than the charge neutrality point observed in the transfer characteristics of graphene-based field-effect transistors with a Si/SiO2 substrate used as the back-gate. The double dip is proved to arise from charge transfer between the graphene and the metal electrodes, while charge storage at the graphene/SiO2 interface can make it more evident. Considering a different Fermi energy from the neutrality point along the channel and partial charge pinning at the contacts, we propose a model which explains all the features observed in the gate voltage loops. We finally show that the double dip enhanced hysteresis in the transfer characteristics can be exploited to realize graphene-based memory devices.

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics.

We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as and a normalized detectivity higher than in the visible range. It exhibits a photocurrent exceeding the forward current because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. We perform extensive I–V and C-V characterization at different temperatures and we measure a zero-bias Schottky barrier height of 0.52 eV at room temperature, as well as an effective Richardson constant A ** = and an ideality factor , explained by a thin (<1 nm) oxide layer at the Gr/Si interface.

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.

Electrical properties and memory effects of field-effect transistors from networks of single- and double-walled carbon nanotubes

We study field-effect transistors made of single- and double-walled carbon nanotube networks for applications as memory devices. The transfer characteristics of the transistors exhibit a reproducible hysteresis which enables their use as nano-sized memory cells with operations faster than 10 ms, endurance longer than 10(+4) cycles and charge retention of a few hours in air. We propose water enhanced charge trapping at the SiO(2)/air interface close to the nanotubes as the dominant mechanism for charge storage. We show that charge storage can be improved by limiting exposure of the device to air.

Strong coupling and double-gap density of states in superconducting MgB2

Using scanning tunneling spectroscopy at T = 4.2 K, we perform simultaneously the topographic imaging and the quasiparticle density of states (DOS) mapping in granular MgB2. We observe a new type of spectrum, showing a pronounced double gap, with the magnitudes of ΔS = 3.9 meV and ΔL = 7.5 meV, i.e. well below and well above the BCS limit. The largest gap value gives the ratio 2ΔL/kBTC = 4.5, which implies strong electron-phonon coupling. Other superconducting regions are found to have a characteristic BCS-shaped DOS. However, the variation of the spectral shape and lower gap widths, from 2.0 meV to 6.5 meV, indicate the importance of surface inhomogeneity and proximity effects in previously published tunneling data. Our finding gives no evidence for any important gap anisotropy. Instead, it strongly supports the multiple-gap scenario in MgB2 in the clean limit, and the single-gap scenario in the dirty limit.

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 104 s, due to photo-charge trapping at the MoS2/SiO2 interface and in MoS2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of [Formula: see text] ON current as high as [Formula: see text] 105 ON-OFF ratio, mobility of ∼1 cm2 V-1 s-1 and photoresponsivity [Formula: see text].

Leakage and field emission in side-gate graphene field effect transistors

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at high voltages. We report a field-emission current density as high as 1μA/μm between graphene flakes. These findings are essential for the miniaturization of atomically thin devices. * Tel: +39.089.969189. E-mail: dibant@sa.infn.it (Antonio Di Bartolomeo)