F. Mattioli

Waveguide superconducting single-photon detectors for integrated quantum photonic circuits

The monolithic integration of single-photon sources, passive optical circuits, and single-photon detectors enables complex and scalable quantum photonic integrated circuits, for application in linear-optics quantum computing and quantum communications. Here, we demonstrate a key component of such a circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (∼20%) at telecom wavelengths, high timing accuracy (∼60 ps), and response time in the ns range and are fully compatible with the integration of single-photon sources, passive networks, and modulators.

A cascade switching superconducting single photon detector

We have realized superconducting single photon detectors with reduced inductance and increased signal pulse amplitude. The detectors are based on a parallel connection of ultrathin NbN nanowires with a common bias inductance. When properly biased, an absorbed photon induces a cascade switch of all the parallel wires generating a signal pulse amplitude of 2mV. The parallel wire configuration lowers the detector inductance and reduces the response time well below 1ns.

Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ=1300 nm and T=4.2 K.

Characterization of parallel superconducting nanowire single photon detectors

Superconducting nanowire single photon detectors (SNSPDs) have been realized using an innovative parallel wire configuration. This configuration allows, at the same time, a large detection area and a fast response, with the additional advantage of large signal amplitudes. The detectors have been thoroughly characterized in terms of signal properties (amplitude, risetime and falltime), detector operation (latching and not latching) and quantum efficiency (at 850 nm). It has been shown that the parallel SNSPD is able to provide significantly higher maximum count rates for large area SNSPDs than meandered SNSPDs. Through a proper parallel wire configuration the increase in maximum count rate can be obtained without latching problems.

High efficiency NbN nanowire superconducting single photon detectors fabricated on MgO substrates from a low temperature process

We demonstrate high-performance nanowire superconducting single photon detectors (SSPDs) on bN thin films grown at a temperature compatible with monolithic integration. NbN films ranging from 150 nm to 3 nm in thickness were deposited by dc magnetron sputtering on MgO substrates at 400 degrees C SSPDs were fabricated on high quality NbN films of different thickness (7 to 3 nm) deposited under optimal conditions. Electrical and optical characterizations were performed on the SSPDs. The highest QE value measured at 4.2K is 20% at 1300 nm.High sensitivity ultrafast nanowire superconducting single photon detectors (SSPD) in the near infrared wavelength range have been fabricated with ultrathin (3.5nm) NbN films grown on R-plane sapphire substrates by dc reactive magnetron sputtering in Ar+N2 mixture. These results show for the first time that high performance NbN SSPDs can be realized on different substrates and at lower deposition temperature than previously reported, and opens the way to integration with advanced solid state optical structures. SSPDs have been fabricated by a two mask process using electron beam lithography and reactive ion etching on 3.5nm thick NbN films deposited under optimal conditions on MgO.

Photon-number resolving detector based on a series array of superconducting nanowires

We present the experimental demonstration of a superconducting photon number resolving detector. It is based on the series connection of N superconducting nanowires, each connected in parallel to an integrated resistor. The device provides a single voltage readout, proportional to the number of photons detected in distinct nanowires. Clearly separated output levels corresponding to the detection of n = 1−4 photons are observed in a 4-element detector fabricated from an NbN film on GaAs substrate, with a single-photon system quantum efficiency of 2.6% at λ = 1.3 μm. The series-nanowire structure is promising in view of its scalability to large photon numbers and high efficiencies.

Physics and application of photon number resolving detectors based on superconducting parallel nanowires

The parallel nanowire detector (PND) is a photon number resolving (PNR) detector that uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (?100?nm wide, a few nm thick), folded in a meander pattern. PNDs were fabricated on 3?4?nm thick NbN films grown on MgO?(TS = 400??C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. PNDs showed a counting rate of 80?MHz and a pulse duration as low as 660?ps full-width at half-maximum (FWHM). Building the histograms of the photoresponse peak, no multiplication noise buildup is observable. Electrical and optical equivalent models of the device were developed in order to study its working principle, define design guidelines and develop an algorithm to estimate the photon number statistics of an unknown light. In particular, the modeling provides novel insight into the physical limit to the detection efficiency and to the reset time of these detectors. The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed and multiplication noise.

Waveguide photon-number-resolving detectors for quantum photonic integrated circuits

Quantum photonic integration circuits are a promising approach to scalable quantum processing with photons. Waveguide single-photon-detectors (WSPDs) based on superconducting nanowires have been recently shown to be compatible with single-photon sources for a monolithic integration. While standard WSPDs offer single-photon sensitivity, more complex superconducting nanowire structures can be configured to have photon-number-resolving capability. In this work, we present waveguide photon-number-resolving detectors (WPNRDs) on GaAs/Al0.75Ga0.25As ridge waveguides based on a series connection of nanowires. The detection of 0–4 photons has been demonstrated with a four-wire WPNRD, having a single electrical read-out. A device quantum efficiency of ∼24% is reported at 1310 nm for the transverse electric polarization.

Electrical characterization of superconducting single-photon detectors

Superconducting meanders of NbN thin films have applications as single-photon detectors with high sensitivity in the infrared region. We report here a detailed analysis of the electrical characteristics of such meanders, by studying structures where each wire of the meander is separately contacted. The effect of heating on the superconducting-normal transition of adjacent stripes is evidenced. Moreover, the analysis of the switching current distribution of each wire highlights the high-critical current uniformity achieved by our meander process.

Waveguide Nanowire Superconducting Single-Photon Detectors Fabricated on GaAs and the Study of Their Optical Properties

Quantum photonic integration is one of the leading approaches for enabling the implementation of quantum simulation and computing at the scale of tens to hundreds of photons. Quantum photonic integrated circuits require the monolithic integration of single-photon sources and passive circuit elements, such as waveguides and couplers, with single-photon detectors. A promising approach for on-chip single-photon detection is the use of superconducting nanowires on top of semiconductor waveguides. Here, we present state-of-the-art NbN films on GaAs for the realization of waveguide superconducting single-photon detectors, suitable for integration with sources and linear optical circuits. Based on the measured optical properties, we propose a new design which allows high absorptance for short nanowires in order to increase the integration density in a quantum photonic chip. Finally, we review recent results on integrated single-photon and photon-number-resolving detectors, and integrated autocorrelators.