F. Thuselt

Radiative recombination from electron-hole drops in n-doped GaP

Abstract The observation of an isoelectronic impurity induced radiative no-phonon transition from electron-hole drops in strongly excited N-doped GaP is reported. The binding energy and carrier density within the drops are compared with theoretical values.

Luminescence from electron-hole liquid in gallium phosphide influenced by the isoelectronic impurity nitrogen

Abstract Luminescence from highly excited nitrogen-doped GaP has been observed. The spectra can be explained assuming equilibrium between two phases of the excited carrier system: an electron-hole liquid and a coexisting ‘low-density’ phase, the density of the latter being strongly correlated to the nitrogen concentration

Decay kinetics and phase behaviour of a dense carrier system in GaP:N

Abstract The densities and decay times of the two coexisting phases in highly-excited nitrogen-doped GaP are determined. Special attention is directed to a possible alteration of the spectra due to stimulated emission. The time behaviour is influenced by a flow of carriers into the liquid corresponding to a negative pressure. From the decay times the coefficients of the radiative and nonradiative transitions are determined.