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Dive into the research topics where R. Bindemann is active.

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Featured researches published by R. Bindemann.


Journal of Luminescence | 1979

Luminescence from electron-hole liquid in gallium phosphide influenced by the isoelectronic impurity nitrogen

R. Schwabe; F. Thuselt; H. Weinert; R. Bindemann

Abstract Luminescence from highly excited nitrogen-doped GaP has been observed. The spectra can be explained assuming equilibrium between two phases of the excited carrier system: an electron-hole liquid and a coexisting ‘low-density’ phase, the density of the latter being strongly correlated to the nitrogen concentration


Journal of Luminescence | 1981

Decay kinetics and phase behaviour of a dense carrier system in GaP:N

H. Weinert; R. Bindemann; R. Schwabe; F. Thuselt; K. Unger

Abstract The densities and decay times of the two coexisting phases in highly-excited nitrogen-doped GaP are determined. Special attention is directed to a possible alteration of the spectra due to stimulated emission. The time behaviour is influenced by a flow of carriers into the liquid corresponding to a negative pressure. From the decay times the coefficients of the radiative and nonradiative transitions are determined.


Physica Status Solidi B-basic Solid State Physics | 1974

On the Spectral Intensity Distribution of Donor–Acceptor Pair Recombination in GaP

R. Bindemann; K. Unger


Physica Status Solidi B-basic Solid State Physics | 1978

Luminescence from Electron–Hole Drops in Undoped GaP

R. Schwabe; F. Thuselt; H. Weinert; R. Bindemann; K. Unger


Physica Status Solidi B-basic Solid State Physics | 1979

Electron–hole liquid in GaP the influence of the isoelectronic impurity nitrogen

R. Schwabe; F. Thuselt; H. Weinert; R. Bindemann


Physica Status Solidi (a) | 1979

DLTS capacitance studies on deep level centres in VPE GaP: N

O. Breitenstein; B. Rheinländer; R. Bindemann


Physica Status Solidi B-basic Solid State Physics | 1978

The “Quasidirect” Radiative Recombination of Free Holes at Neutral Shallow Donors in GaP

R. Bindemann; R. Schwabe; T. Hänsel


Physica Status Solidi (a) | 1981

Minority carrier lifetime in VPE‐GaP:N, Te at various excitation levels

K. Wandel; G. Wurbs; R. Bindemann; A. Kiksch; R. Schwabe


Crystal Research and Technology | 1979

Determination of Nitrogen Concentration in GaP Epitaxial Layers by Two Independent Methods

T. Hänsel; H.‐G. Brühl; R. Bindemann; W. Seifert; K. Jacobs


Crystal Research and Technology | 1973

Herstellung und physikalische Grundcharakterisierung von Al1–xGaxAs‐Kristallen

P. Fischer; G. Kühn; R. Bindemann; B. Rheinländer; W. Hörig

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K. Wandel

Humboldt University of Berlin

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