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Publication
Featured researches published by Fangfei Ming.
Nature Communications | 2017
Fangfei Ming; Daniel Mulugeta; Weisong Tu; Tyler S. Smith; P. Vilmercati; Geunseop Lee; Ying-Tzu Huang; Renee D. Diehl; Paul C. Snijders; Hanno H. Weitering
Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.
Physical Review B | 2015
Sun-Woo Kim; Hyunjung Kim; Fangfei Ming; Yu Jia; Changgan Zeng; Jun-Hyung Cho; Zhenyu Zhang
It was recently proposed that the stress state of a material can also be altered via electron or hole doping, a concept termed electronic stress (ES), which is different from the traditional mechanical stress (MS) due to lattice contraction or expansion. Here we demonstrate the equivalence of ES and MS in structural stabilization, using In wires on Si(111) as a prototypical example. Our systematic density-functional theory calculations reveal that, first, for the same degrees of carrier doping into the In wires, the ES of the high-temperature metallic 4x1 structure is only slightly compressive, while that of the low-temperature insulating 8x2 structure is much larger and highly anisotropic. As a consequence, the intrinsic energy difference between the two phases is significantly reduced towards electronically phase-separated ground states. Our calculations further demonstrate quantitatively that such intriguing phase tunabilities can be achieved equivalently via lattice-contraction induced MS in the absence of charge doping. We also validate the equivalence through our detailed scanning tunneling microscopy experiments. The present findings have important implications in understanding the underlying driving forces involved in various phase transitions of simple and complex systems alike.
Physical Review Letters | 2014
Hui Zhang; Fangfei Ming; Hyunjung Kim; Hongbin Zhu; Qiang Zhang; Hanno H. Weitering; Xudong Xiao; Changgan Zeng; Jun-Hyung Cho; Zhenyu Zhang
Physical Review Letters | 2017
Fangfei Ming; Steve Johnston; Daniel Mulugeta; Tyler S. Smith; Paolo Vilmercati; Geunseop Lee; Thomas A. Maier; Paul C. Snijders; Hanno H. Weitering
Physical Review B | 2018
Fangfei Ming; Tyler S. Smith; S. Johnston; Paul C. Snijders; Hanno H. Weitering
Physical Review B | 2018
Seho Yi; Fangfei Ming; Ying-Tzu Huang; Tyler S. Smith; Xiyou Peng; Weisong Tu; Daniel Mulugeta; Renee D. Diehl; Paul C. Snijders; Jun-Hyung Cho; Hanno H. Weitering
arXiv: Mesoscale and Nanoscale Physics | 2017
Seho Yi; Fangfei Ming; Ying-Tzu Huang; Tyler S. Smith; Xiyou Peng; Weisong Tu; Daniel Mulugeta; Renee D. Diehl; Paul C. Snijders; Jun-Hyung Cho; Hanno H. Weitering
Bulletin of the American Physical Society | 2017
Fangfei Ming; Daniel Mulugeta; Weisong Tu; Tyler S. Smith; P. Vilmercati; Geunseop Lee; Ying-Tzu Huang; Renee D. Diehl; Paul C. Snijders; Hanno H. Weitering
Bulletin of the American Physical Society | 2015
Fangfei Ming; Daniel Mulugeta; Paolo Vilmercati; Hanno H. Weitering; Paul C. Snijders
Bulletin of the American Physical Society | 2015
Paul C. Snijders; Ying-Tzu Huang; Fangfei Ming; Daniel Mulugeta; Weisong Tu; Paul R. C. Kent; Renee D. Diehl; Hanno H. Weitering