Fausto Piazza

High performance Flash memory for 65 nm embedded automotive application

In this paper the results obtained for a new process flow that integrates a high performance flash cell for automotive application with a state of the art 65nm CMOS have been presented. Despite the several specific process steps introduced for the first time on embedded technologies, the MOS performances have not been impacted by the integration of the Flash cell and the related HV MOS and the results obtained on a 4Mbit Flash array are very promising.

Evaluation of ONO compatibility with high-k metal gate stacks for future embedded flash products

Embedded flash memories having high-k metal gate-based logic devices will require modifications to the flash cells in order to remain economically feasible. One potential integration scheme is to keep the traditional ONO layer as the flash cells inter-gate dielectric and replace its poly-Si control gate with the same high-k metal gate stack used for the logic devices. Preliminary electrical tests show that an HfSiON/TiN/a-Si gate stack does not significantly impact the EOT or leakage properties of the ONO layer. This stack is more robust than the traditional ONO with a poly-Si gate.