Felipe Vallini

Nonreciprocal lasing in topological cavities of arbitrary geometries

Topological lasing Resonant cavities that confine light are crucial components of lasers. Typically, these cavities are designed to high specification to get the best possible output. That, however, can limit their integration into photonic devices and optical circuits. Bahari et al. fabricated resonant cavities of arbitrary shape within a hybrid photonic crystal structure. The confinement of light to topologically protected edge states resulted in lasing at communication wavelengths. Relaxing the resonant cavity design criteria should be useful in designing photonic devices. Science, this issue p. 636 Resonant cavities of arbitrary shape can be designed to provide lasing into topically protected edge states. Resonant cavities are essential building blocks governing many wave-based phenomena, but their geometry and reciprocity fundamentally limit the integration of optical devices. We report, at telecommunication wavelengths, geometry-independent and integrated nonreciprocal topological cavities that couple stimulated emission from one-way photonic edge states to a selected waveguide output with an isolation ratio in excess of 10 decibels. Nonreciprocity originates from unidirectional edge states at the boundary between photonic structures with distinct topological invariants. Our experimental demonstration of lasing from topological cavities provides the opportunity to develop complex topological circuitry of arbitrary geometries for the integrated and robust generation and transport of photons in classical and quantum regimes.

Purcell effect in sub-wavelength semiconductor lasers.

We present a formal treatment of the modification of spontaneous emission rate by a cavity (Purcell effect) in sub-wavelength semiconductor lasers. To explicitly express the assumptions upon which our formalism builds, we summarize the results of non-relativistic quantum electrodynamics (QED) and the emitter-field-reservoir model in the quantum theory of damping. Within this model, the emitter-field interaction is modified to the extent that the field mode is modified by its environment. We show that the Purcell factor expressions frequently encountered in the literature are recovered only in the hypothetical condition when the gain medium is replaced by a transparent medium. Further, we argue that to accurately evaluate the Purcell effect, both the passive cavity boundary and the collective effect of all emitters must be included as part of the mode environment.

Modal amplification in active waveguides with hyperbolic dispersion at telecommunication frequencies

We present a method for studying amplification of electromagnetic modes in active, circularly symmetric waveguides with hyperbolic dispersion. Using this method, we obtain a closed-form expression for the modal threshold condition. We find that modal amplification is possible in a region of the radius-wavelength phase-space with small enough radius so that propagation of the mode is permitted while modal energy and phase counter-propagate. At telecommunication frequencies, such a situation is achievable only when the absolute value of the real metal permittivity exceeds that of the active dielectric. We validate our theoretical conclusions with numerical simulations that explain the threshold condition in terms of an energy balance between the longitudinal and radial components of the electric field.

Characterizing the effects of free carriers in fully etched, dielectric-clad silicon waveguides

We theoretically characterize the free-carrier plasma dispersion effect in fully etched silicon waveguides, with various dielectric material claddings, due to fixed interface charges and trap states at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

Embedded coupled microrings with high-finesse and close-spaced resonances for optical signal processing

Single microring resonators have been used in applications such as wavelength multicasting and microwave photonics, but the dependence of the free spectral range with ring radius imposes a trade-off between the required GHz optical channel spacing, footprint and power consumption. We demonstrate four-channel all-optical wavelength multicasting using only 1 mW of control power, with converted channel spacing of 40-60 GHz. Our device is based on a compact embedded microring design fabricated on a scalable SOI platform. The coexistence of close resonance spacing and high finesse (205) in a compact footprint is possible due to enhanced quality factors (30,000) resulting from the embedded configuration and the coupling-strength dependence of resonance spacing, instead of ring size. In addition, we discuss the possibility of achieving continuously mode splitting from a single-notch resonance up to 40 GHz.

Amorphous Al 2 O 3 Shield for Thermal Management in Electrically Pumped Metallo-Dielectric Nanolasers

We analyze amorphous Al2O3 (α-Al2O3) for use as a thick thermally conductive shield in metallo-dielectric semiconductor nanolasers, and show that the use of α-Al2O3 allows a laser to efficiently dissipate heat through its shield. This new mechanism for thermal management leads to a significantly lower operating temperature within the laser, compared with lasers with less thermally conductive shields, such as SiO2. We implement the shield in a continuous wave electrically pumped cavity, and analyze its experimental performance by jointly investigating its optical, electrical, thermal, and material gain properties. Our analysis shows that the primary obstacle to room temperature lasing was the devices high threshold gain. At the high pump levels required to achieve the gain threshold, particularly at room temperature, the gain spectrum broadened and shifted, leading to detrimental mode competition. Further simulations predict that an increase in the pedestal undercut depth should enable room temperature lasing in a device with the same footprint and gain volume. Through the integrated treatment of various physical effects, this analysis shows the promise of α-Al2O3 for nanolaser thermal management, and enables better understanding of nanolaser behavior, as well as more informed design of reliable nanolasers.

Effects of Ga+ milling on InGaAsP quantum well laser with mirrors milled by focused ion beam

InGaAsP/InP quantum well ridge waveguide lasers were fabricated for the evaluation of Ga+ focused ion beam milling of mirrors. Electrical and optical properties were investigated. A 7% increment in the threshold current, a 17% reduction in the external quantum efficiency, and a 15 nm blueshift in the emission spectrum were observed after milling as compared to the as-cleaved facet result. Annealing in inert atmosphere partially reverts these effects, resulting in a 4% increment in the threshold current, an 11% reduction in the external efficiency, and a 13 nm blueshift with the as-cleaved result. The current-voltage behavior after milling and annealing shows a very small increase in leakage current, indicating that optical damage is the main effect of the milling process.

Luminescent hyperbolic metasurfaces

When engineered on scales much smaller than the operating wavelength, metal-semiconductor nanostructures exhibit properties unobtainable in nature. Namely, a uniaxial optical metamaterial described by a hyperbolic dispersion relation can simultaneously behave as a reflective metal and an absorptive or emissive semiconductor for electromagnetic waves with orthogonal linear polarization states. Using an unconventional multilayer architecture, we demonstrate luminescent hyperbolic metasurfaces, wherein distributed semiconducting quantum wells display extreme absorption and emission polarization anisotropy. Through normally incident micro-photoluminescence measurements, we observe absorption anisotropies greater than a factor of 10 and degree-of-linear polarization of emission >0.9. We observe the modification of emission spectra and, by incorporating wavelength-scale gratings, show a controlled reduction of polarization anisotropy. We verify hyperbolic dispersion with numerical simulations that model the metasurface as a composite nanoscale structure and according to the effective medium approximation. Finally, we experimentally demonstrate >350% emission intensity enhancement relative to the bare semiconducting quantum wells.

Gain-enhanced high-k transmission through metal-semiconductor hyperbolic metamaterials

We analyze the steady-state transmission of high-momentum (high-k) electromagnetic waves through metal-semiconductor multilayer systems with loss and gain in the near-infrared (NIR). Using a semi-classical optical gain model in conjunction with the scattering matrix method (SMM), we study indium gallium arsenide phosphide (InGaAsP) quantum wells as the active semiconductor, in combination with the metals, aluminum-doped zinc oxide (AZO) and silver (Ag). Under moderate external pumping levels, we find that NIR transmission through Ag/InGaAsP systems may be enhanced by several orders of magnitude relative to the unpumped case, over a large angular and frequency bandwidth. Conversely, transmission enhancement through AZO/InGaAsP systems is orders of magnitude smaller, and has a strong frequency dependence. We discuss the relative importance of Purcell enhancement on our results and validate analytical calculations based on the SMM with numerical finite-difference time domain simulations.

Silicon technology compatible photonic molecules for compact optical signal processing

Photonic molecules (PMs) based on multiple inner coupled microring resonators allow to surpass the fundamental constraint between the total quality factor (QT), free spectral range (FSR), and resonator size. In this work, we use a PM that presents doublets and triplets resonance splitting, all with high QT. We demonstrate the use of the doublet splitting for 34.2 GHz signal extraction by filtering the sidebands of a modulated optical signal. We also demonstrate that very compact optical modulators operating 2.75 times beyond its resonator linewidth limit may be obtained using the PM triplet splitting, with separation of ∼55 GHz.