Felix Schupp

One dimensional transport in silicon nanowire junction-less field effect transistors

Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regime allows excellent gate modulation with near ideal subthreshold slopes, on- to off-current ratios above 108 and high on-currents at room temperature. Universal conductance scaling as a function of voltage and temperature similar to previous reports of Luttinger liquids and Coulomb gap behaviour at low temperatures suggests that many body effects including electron-electron interactions are important in describing the electronic transport. This suggests that modelling of such nanowire devices will require 1D models which include many body interactions to accurately simulate the electronic transport to optimise the technology but also suggest that 1D effects could be used to enhance future transistor performance.

Sensitive Radio-Frequency Measurements of a Quantum Dot by Tuning to Perfect Impedance Matching

Electrical readout of spin qubits requires fast and sensitive measurements, but these are hindered by poor impedance matching to the device. We demonstrate perfect impedance matching in a radio-frequency readout circuit, realized by incorporating voltage-tunable varactors to cancel out parasitic capacitances. In the optimized setup, a capacitance sensitivity of

Single-electron devices in silicon

1.6~\mathrm{aF}/\sqrt{\mathrm{Hz}}

Quantum Interference in Silicon 1D Quasi-Ballistic Junctionless Nanowire Field Effect Transistors

is achieved at a maximum source-drain bias of

Quantum Interference Effects in Degenerately Doped Silicon Nanowire Junction-less Transistors

170~\mu

Many-Body Effects in 1D Degenerately-Doped Silicon Nanowire Devices

V root-mean-square and with bandwidth above

Silicon Transistors in Reduced Dimensions

15~

Top‐Down Fabricated Silicon Nanowire Junctionless Transistors

MHz. Coulomb blockade is measured via both conductance and capacitance in a quantum dot, and the two contributions are found to be proportional, as expected from a quasistatic tunneling model. We benchmark our results against the requirements for single-shot qubit readout using quantum capacitance, a goal that has so far been elusive.

Ultra Scaled Silicon Nanowire Single Electron Transistors

Miniaturisation of silicon microelectronics continues to be a major driving force for the technological progress in computing and electronics. As modern device fabrication is approaching the nanometre scale, quantum effects are dominating device properties. This may set a lower bound for the size of conventional devices, and therefore ultimately limit their performance. On the other hand, quantum effects could enable the development of new types of devices, which might overcome the limitations of classical physics. This review outlines the recent progress in the field of single-electron devices for charge sensing and metrological applications. It illustrates the gap between large-scale commercial fabrication and research prototypes as well as technologies that could close this gap in the future. Any viable roadmap towards commercialisation of single-electron devices is likely to leverage the highly developed silicon-based fabrication methods that have enabled impressive progress in information and communication technology. The scope of this review ranges from random dopant fluctuations in classical devices to single-dopant transistors, and covers electron pumps as well as top-down fabricated single-electron transistors in direct-current and radio-frequency operation. This review was submitted as part of the 2016 Materials Literature Review Prize of the Institute of Materials, Minerals and Mining run by the Editorial Board of MST. Sponsorship of the prize by TWI Ltd is gratefully acknowledged