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Dive into the research topics where Frank Jessen is active.

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Featured researches published by Frank Jessen.


Applied Physics Letters | 2009

Highly efficient yellow organic light emitting diode based on a layer-cross faded emission layer allowing easy color tuning

Florian Lindla; Manuel Boesing; Christoph Zimmermann; Frank Jessen; Philipp van Gemmern; Dietrich Bertram; Dietmar Keiper; Nico Meyer; Michael Heuken; H. Kalisch; R. H. Jansen

An easy way to adjust the color of yellow organic light emitting diodes (OLED) is realized by basing the emission layer on a cross-fading zone of two unipolar-conducting host materials doping parts of it either with a red or green phosphorescent emitter at varying thickness ratios. At color coordinates of 0.47/0.50, a current efficacy of 42.2 cd/A (16.2% external quantum efficiency) and a power efficacy of 32.9 lm/W (1000 cd/m2) are measured without light extraction enhancement. Mixed-host emission layer OLED without cross-fading are processed for comparison. Exciton distributions are studied. The concept is suggested to be useful for white OLED.


MRS Proceedings | 2009

Layer Cross-Fading at Organic/Organic Interfaces in OVPD-Processed Red Phosphorescent Organic Light Emitting Diodes as a New Concept to Increase Current and Luminous Efficacy

Florian Lindla; Manuel Boesing; Christoph Zimmermann; Frank Jessen; Philipp van Gemmern; Dietrich Bertram; Dietmar Keiper; Nico Meyer; M. Heuken; H. Kalisch; R. H. Jansen

The current and luminous efficacy of a red phosphorescent organic light emitting diode (OLED) with sharp interfaces between each of the organic layers can be increased from 18.8 cd/A and 14.1 lm/W (at 1,000 cd/m 2 ) to 36.5 cd/A (+94%, 18% EQE) and 33.7 lm/W (+139%) by the introduction of a layer cross-fading zone at the hole transport layer (HTL) to emission layer (EL) interface. Layer cross-fading describes a procedure of linearly decreasing the fraction in growth rate of an organic layer during deposition over a certain thickness while simultaneously increasing the fraction in growth rate of the following layer. For OLED processing and layer cross-fading organic vapor phase deposition (OVPD) is used. The typical observation of a roll-off in current efficacy of phosphorescent OLED to higher luminance can be reduced significantly. An interpenetrating network of a prevailing hole and a prevailing electron conducting material is created in the cross-fading zone. This broadens the recombination zone and furthermore lowers the driving voltage. The concept of layer cross-fading to increase the efficacies is suggested to be useful in multi-colored OLED stacks as well.


Physica Status Solidi (c) | 2005

Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates

M. Fieger; Y. Dikme; Frank Jessen; H. Kalisch; Achim Noculak; A. Szymakowski; Philipp van Gemmern; B. Faure; C. Richtarch; F. Letertre; Michael Heuken; R. H. Jansen


Thin Solid Films | 2007

Influence of thermal annealing on photoluminescence and structural properties of N,N′-diphenyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) organic thin films

K.A. Osipov; V.N. Pavlovskii; E.V. Lutsenko; A.L. Gurskii; G.P. Yablonskii; S. Hartmann; A. Janssen; H.-H. Johannes; R. Caspary; Wolfgang Kowalsky; Nico Meyer; M. Gersdorff; M. Heuken; P. van Gemmern; Christoph Zimmermann; Frank Jessen; H. Kalisch; R. H. Jansen


MRS Proceedings | 2009

Introduction of Innovative Dopant Concentration Profiles to Broaden the Recombination Zone of Phosphorescent OVPD-Processed Organic Light Emitting Diodes

Manuel Bösing; Christoph Zimmermann; Florian Lindla; Frank Jessen; Philipp van Gemmern; Dietrich Bertram; Nico Meyer; Dietmar Keiper; M. Heuken; H. Kalisch; R. H. Jansen


Physica Status Solidi (c) | 2006

Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates

Y. Dikme; M. Fieger; M. Eickelkamp; C. Giesen; E. V. Lutsenko; G. P. Yablonskii; A. Szymakowski; Frank Jessen; Andrei Vescan; H. Kalisch; M. Heuken; R. H. Jansen


Physica Status Solidi (c) | 2003

Si(111) as alternative substrate for AlGaN/GaN HEMT

Y. Dikme; M. Fieger; Frank Jessen; A. Szymakowski; H. Kalisch; J.F. Woitok; P. van Gemmern; P. Javorka; Michel Marso; N. Kaluza; R. H. Jansen; Michael Heuken


2008 MRS Fall Meetin | 2008

Influence of Substrate Temperature on Multilayer Thin Film Growth, Charge Carrier Injection and Efficiency of OVPD-processed Organic Light Emitting Diodes

Manuel Boesing; Alaa Abdellah; Christoph Zimmermann; Frank Jessen; Florian Lindla; Philipp van Gemmern; Dietrich Bertram; Nico Meyer; Dietmar Keiper; M. Heuken; H. Kalisch; Klaus Meerholz; R. H. Jansen


2008 MRS Fall Meetin | 2008

Measurement and Modeling of Hole Transport in Blends of N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) and the Hole-conducting Material HIM

Christoph Zimmermann; Manuel Bösing; Florian Lindla; Alaa Abdellah; Frank Jessen; Philipp van Gemmern; Hans-Peter Löbl; M. Heuken; H. Kalisch; R. H. Jansen


Archive | 2011

Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

Martin E. Bluhm; James Coffey; Roman Y. Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Sören Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

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H. Kalisch

RWTH Aachen University

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M. Heuken

RWTH Aachen University

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M. Fieger

RWTH Aachen University

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