Franz Auerbach

Compensation component with improved robustness

Compensation component with improved robustness has nested regions doped so point of maximum electric strength of field resulting from two perpendicular fields is displaced

SiC SEMICONDUCTOR DEVICE WITH SELF-ALIGNED CONTACTS, INTEGRATED CIRCUIT AND MANUFACTURING METHOD

Solid state half bridge circuit having switching stages coupled to diodes and operated in a delayed mode

Power semiconductor module operating method, involves carrying out switching operation phase for switching component between conducting and locking conditions, and injecting electrons into dielectric during injection operation phase

Semiconductor element especially a non punch through field stop IGBT or p IGBT has highly doped layer in region near back surface of semiconductor but separated from rear electrode

Semiconductor element used as a MOSFET or IGBT arranged in a semiconductor body comprises a source and a drain zone of first conductivity, a body zone arranged between the source and drain zones, and a gate electrode

Halbleitervorrichtung mit selbstjustierten Kontakten, integrierte Schaltung und Herstellungsverfahren

Halbleitervorrichtung mit selbstjustierten Kontakten, integrierte Schaltung und Herstellungsverfahren A semiconductor device with self-aligned contacts, integrated circuit, and manufacturing method

Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls mit wenigstens einem durch Feldeffekt steuerbaren Halbleiterbauelement The power semiconductor module and method of operating a power semiconductor module with at least one field-effect-controllable semiconductor component