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Franz Auerbach

Infineon Technologies

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Publication

Featured researches published by Franz Auerbach.

Archive | 2001

Compensation component with improved robustness

Franz Auerbach; Gerald Deboy; Hans Weber

Archive | 2000

Compensation component with improved robustness has nested regions doped so point of maximum electric strength of field resulting from two perpendicular fields is displaced

Hans Weber; Franz Auerbach; Gerald Deboy

Archive | 2008

SiC SEMICONDUCTOR DEVICE WITH SELF-ALIGNED CONTACTS, INTEGRATED CIRCUIT AND MANUFACTURING METHOD

Michael Treu; Kathrin Rueschenschmidt; Oliver Haeberlen; Franz Auerbach

Archive | 2005

Solid state half bridge circuit having switching stages coupled to diodes and operated in a delayed mode

Franz Auerbach; Reinhold Bayerer

Archive | 2008

Power semiconductor module operating method, involves carrying out switching operation phase for switching component between conducting and locking conditions, and injecting electrons into dielectric during injection operation phase

Gerald Josef Sölkner; Hans-Joachim Schulze; Franz Auerbach

Archive | 2003

Semiconductor element especially a non punch through field stop IGBT or p IGBT has highly doped layer in region near back surface of semiconductor but separated from rear electrode

Franz Auerbach; Frank Pfirsch; Jenö Tihanyi

Archive | 2001

Semiconductor element used as a MOSFET or IGBT arranged in a semiconductor body comprises a source and a drain zone of first conductivity, a body zone arranged between the source and drain zones, and a gate electrode

Frank Pfirsch; Armin Willmeroth; Franz Auerbach; Gerald Deboy; Dirk Ahlers; Hans Weber

Archive | 2010

Halbleitervorrichtung mit selbstjustierten Kontakten, integrierte Schaltung und Herstellungsverfahren

Michael Treu; Kathrin Rüschenschmidt; Oliver Häberlen; Franz Auerbach

Archive | 2009

Halbleitervorrichtung mit selbstjustierten Kontakten, integrierte Schaltung und Herstellungsverfahren A semiconductor device with self-aligned contacts, integrated circuit, and manufacturing method

Franz Auerbach; Oliver Häberlen; Kathrin Rüschenschmidt; Michael Treu

Archive | 2006

Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls mit wenigstens einem durch Feldeffekt steuerbaren Halbleiterbauelement The power semiconductor module and method of operating a power semiconductor module with at least one field-effect-controllable semiconductor component

Franz Auerbach; Hans-Joachim Schulze; Gerald Sölkner

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Gerald Deboy

Infineon Technologies

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Hans Weber

Infineon Technologies

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Frank Pfirsch

Infineon Technologies

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Michael Treu

Infineon Technologies

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Armin Willmeroth

Infineon Technologies

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Dirk Ahlers

Infineon Technologies

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Hans-Joachim Schulze

Infineon Technologies

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Kathrin Rüschenschmidt

Infineon Technologies

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Oliver Häberlen

Infineon Technologies

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Gerald Josef Sölkner

Infineon Technologies

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