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Dive into the research topics where Fred W. Van Keuls is active.

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Featured researches published by Fred W. Van Keuls.


Integrated Ferroelectrics | 2003

Synthesis and Characterization of Nanostructured BSTO Thin-Films for Microwave Applications

Bonnie Riehl; Guru Subramanyam; Rand Biggers; Angela Campbell; Fred W. Van Keuls; Felix A. Miranda; David Tomlin

Nanophase synthesis of ferroelectric thin-films of Ba0.6Sr0.4TiO3 (BSTO) was studied systematically for applications in tunable microwave components. Synthesis of nanostructured BSTO was performed using a pulsed-laser deposition system with real-time in-situ process control. The main research goal was to utilize the pulsed laser deposition parameters to control the grain growth for low microwave loss nanostructured BSTO thin-films on crystalline substrates such as LaAlO3. These parameters include the energy density of the laser pulses, wavelength, oxygen partial pressure, distance between the target and the substrate, and the substrate temperature. The nanostructural characterization was performed using XRD, SEM and AFM. Microwave characterization was done using coplanar waveguide lines to characterize the frequency dependent dielectric properties (ϵr and tan δ). BSTO films were grown at the same measured temperature and energy density but in different oxygen ambient pressures from 19 mTorr through 300 mTorr. Using contact mode AFM, the grain size was found to decrease as the oxygen ambient pressure was reduced from 150 mTorr to 38 mTorr. The growth process changed when the pressure was increased above 150 mTorr. Nanocluster structures rather than nanoparticles were found at 225 mTorr. Average grain sizes less than 100 nm were obtained to oxygen pressures below 75 mTorr. The XRD spectra indicate the highly crystalline nature of the film. Microwave measurements, performed between 9–18 GHz, suggest the nano-structured BSTO thin-films on LaAlO3 (LAO) substrates are highly tunable (up to 25%).


Integrated Ferroelectrics | 1999

Correlation of Electric Field and Critical Design Parameters for Ferroelectric Tunable Microwave Filters

Guru Subramanyam; Fred W. Van Keuls; Felix A. Miranda; C. L. Canedy; Sanjeev Aggarwal; T. Venkatesan; R. Ramesh

Abstract The correlation of electric field and critical design parameters such as the insertion loss, frequency tunability, return loss, and bandwidth of conductor/ferroelectric/dielectric microstrip tunable K-band microwave filters is discussed in this work. This work is based primarily on barium strontium titanate (BSTO) ferroelectric thin film based tunable microstrip filters for room temperature applications. Two new parameters which we believe will simplify the evaluation of ferroelectric thin films for tunable microwave filters, are defined. The first of these, called the sensitivity parameter, is defined as the incremental change in center frequency with incremental change in maximum applied electric field (EPEAK) in the filter. The other, the loss parameter, is defined as the incremental or decremental change in insertion loss of the filter with incremental change in maximum applied electric field. At room temperature, the Au/BSTO/LAO microstrip filters exhibited a sensitivity parameter value betw...


Integrated Ferroelectrics | 2010

Ba0.60Sr0.40TiO3 THIN FILMS FOR MICROWAVE PHASE SHIFTER DEVICES: THE INFLUENCE OF CRYSTALLIZATION TEMPERATURE ON THE ELECTRIC FIELD DEPENDENT PHASE SHIFT RESPONSE

M. W. Cole; Ryan C. Toonen; S. G. Hirsch; E. Ngo; Robert R. Romanofsky; Fred W. Van Keuls; C. Hubbard; M. Ivill; D. J. Demaree

ABSTRACT We present the correlation between film fabrication conditions (crystallization temperatures), microstructure, and dielectric phase shift of Ba1−xSrxTiO3 (BST) thin films synthesized by metal organic solution deposition (MOSD) on sapphire substrates. The structure, microstructure, surface morphology, and composition of the films were assessed by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), and Rutherford backscattering spectroscopy (RBS). The dielectric phase shift measurements were carried out using coplanar waveguide (CPW) test circuits over a frequency range of 2–18 GHz. Our results indicate that BST processed at 950°C achieved large relative phase shift response with low attenuation of the microwave signal.


Integrated Ferroelectrics | 2000

Thin films of CCVD Ba0.5Sr0.5TiO3 and SrTiO3 for electrically tunable coupled microstripline phase shifters

Wen-Yi Lin; Hai Huang; Fang Yang; Jerome Schmitt; Andrew T. Hunt; Robert R. Romanofsky; Fred W. Van Keuls; Felix A. Miranda; Carl H. Mueller

Abstract Epitaxial barium strontium titanate and strontium titanate thin films were deposited on (100) MgO single-crystal substrates, utilizing Combustion Chemical Vapor Deposition. The as-deposited films were patterned with gold electrodes to form interdigitated structure to function as electrically tunable devices, namely, coupled microstripline phase shifters (CMPS). Microwave dielectric properties were characterized at 11–20 GHz with an applied electric field up to ±35 V/μm. A maximum figure of merit of 53°/dB at 20 GHz and 23°C was measured. The demonstrated high degree of tunability and relatively low loss showed great potential of these films for the targeted frequency agile device applications. Characterization, using SEM, EDS, and XRD, is presented in addition to microwave performance as a function of dc bias and frequency.


Integrated Ferroelectrics | 2002

Performance Enhancement of Tunable Bandpass Filters Using Selective Etched Ferroelectric Thin Films

Felix A. Miranda; Carl H. Mueller; Fred W. Van Keuls

The inclusion of voltage-tunable barium strontium titanate (BSTO) thin films into planar band pass filters offers tremendous potential to increase their versatility. The ability to tune the passband so as to correct for minor deviations in manufacturing tolerances, or to completely reconfigure the operating frequencies of a microwave communication system, are highly sought-after goals. However, use of ferroelectric films in these devices results in higher dielectric losses, which in turn increase the insertion loss and decrease the quality factors of the filters. This study explores the use of patterned ferroelectric layers to minimize dielectric losses without degrading tunability. Patterning the ferroelectric layers enables us to constrict the width of the ferroelectric layers between the coupled microstrip lines, and minimize losses due to ferroelectric layers. Coupled one-pole microstrip bandpass filters with fundamental resonaces at ∼7.2 GHz and well-defined harmonic resonances at ∼14.4 and ∼21.6 GHz, were designed, simulated and tested. For one of the filters, experimental results verified that its center frequency was tunable by 528 MHz at a center frequency of 21.957 GHz, with insertion losses varying from 4.3 to 2.5 dB, at 0 and 3.5 V/ w m, respectively. These data demonstrate that the tuning-to-loss figure of merit of tunable microstrip filters can be greatly improved using patterned ferroelectric thin films as the tuning element, and tuning can be controlled by engineering the ferroelectric constriction in the coupled sections.


Integrated Ferroelectrics | 2000

Effect of dc biasing on YBCO/STO/LAO tunable microstrip filters

Guru Subramanyam; Fred W. Van Keuls; Felix A. Miranda

Abstract One of the critical design aspects in ferroelectric tunable microstrip filters is choosing the right bias configuration, for large tunability as well as to maintain the filters passband characteristics. This work is based on strontium titanate (STO) ferroelectric thin-film based tunable microstrip filters for cryogenic temperature applications. Large tunability factors have been demonstrated in YBCO/STO/LAO two-layered microstrip filters when operated at or below 77 K. The effect of the dc electric field (primarily responsible for tuning) and critical design parameters such as the insertion loss, frequency tunability, return loss, and bandwidth of superconductor/ferroelectric/dielectric microstrip tunable K-band microwave filters is discussed in this work.


Integrated Ferroelectrics | 1999

Correlation between material properties of ferroelectric thin films and design parameters for microwave device applications: Modeling examples and experimental verification

Felix A. Miranda; Fred W. Van Keuls; Guru Subramanyam; Carl H. Mueller; Robert R. Romanofsky; G. Rosado

Abstract The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film “flip-chip” technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip...


Integrated Ferroelectrics | 2001

Life cycle testing of BaxSr1−xTiO3 ferroelectric thin films in a tlinable microwave device

Felix A. Miranda; Fred W. Van Keuls; Robert R. Romanofsky; Carl H. Mueller; Joseph D. Warner

Abstract Thin film ferroelectrics are being studied as candidates for novel tunable microwave components such as tunable filters, tunable oscillators, and phase shifters for applications in phased array antennas. Much work has been done optimizing the ferroelectric material and in producing proof-of-concepts of these components. However, little attention has been given to their reliability. In this study we present our results on the reliability of high quality K-band phase shifters made of BaxSr1−xTiO3 (BSTO) ferroelectric thin films (0.5–0.75 μm thick) on MgO and LAO. The phase shift and insertion loss were measured at 300 K over 104 operation cycles within a 0–400 V dc bias range (0–40 V/μm) at 15, 18, and 22 GHz. Results for these phase shifters indicate that in general there were no appreciable changes in phase shift after 4×104 cycles, suggesting that these phase shifters are robust enough to sustain optimal performance under the operating mode typical of fast tracking phased arrays.


Integrated Ferroelectrics | 2002

Design and Development of Ferroelectric Tunable Coplanar Waveguide Components for Ku- and K-Band Applications

Guru Subramanyam; Nazme Mohsina; Abdullah Zaman; Fred W. Van Keuls; Felix A. Miranda; Robert R. Romanofsky; Joseph D. Warner; Chonglin Chen

In the past several years, we have demonstrated electrically tunable microstrip components such as resonators, filters, diplexers, and couplers based on conductor/ferroelectrics/dielectric two-layered structure. Recently, we are focusing our efforts on tunable coplanar waveguide (CPW) components in collaboration with NASA Glenn Research Center, Cleveland, OH. The advantages of CPW components include higher dielectric tunability compared to microstrip structure, ease of shunt connections, and ease of testing. To date, we have modeled several CPW structures with ferroelectric thin-film to study the effect of inserting the ferroelectric thin-film on electric tunability, attenuation and dispersion. Also, we have designed and fabricated devices such as resonators, and filters. The ferroelectric tunable CPW filters were tunable by more than 3% at bias voltage levels of - 100V. The BSTO based CPW filters offer higher sensitivity parameter as well as lower loss parameter compared to BSTO tunable 2-pole microstrip filters.


Integrated Ferroelectrics | 2001

Ferroelectric tunable coplanar waveguide components for Ku- and K-band and applications

Guru Subramanyam; Abdullah Zaman; Nazme Mohsina; Fred W. Van Keuls; Felix A. Miranda; Robert R. Romanofsky; Joseph D. Warner; P. Boolchand

Abstract The main objective of this research is to study the effect of inserting a Barium Strontium Titanate (BSTO) ferroelectric tuning layer in coplanar waveguide (CPW) and conductor-backed CPW (CBCPW) components. The modeled components include CPW and CBCPW transmission lines (with and without a dielectric filling between the center conductor and the ground planes). We have modeled the characteristic impedance (Z0), effective dielectric constant (ϵeff), attenuation and dispersion as a function of circuit geometry and the ferroelectric thin-films dielectric properties over the 10–20 GHz frequency range. We found that the presence of a ferroelectric layer between the transmission line and the ground planes improves the percentage change in ϵeff by almost two-fold with respect to a CPW deprived of this layer. This result is significant, as one could obtain larger frequency tunability with relatively lower applied fields compared to regular CPW or microstrip lines.

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Angela Campbell

Air Force Research Laboratory

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