Guru Subramanyam

Design and development of ferroelectric tunable microwave components for Kuand K-band satellite communication systems

Integration of a high-temperature superconductor with a nonlinear dielectric ferroelectric such as strontium titanate, i.e., SrTiO/sub 2/ (STO), has created a new class of electrically tunable low-loss microwave components. We have designed and fabricated frequency and phase agile components using a conductor/ferroelectric/dielectric two-layered microstrip configuration. Some examples of these components are: microstrip ring resonators, local oscillators, edge coupled filters, and phase-shifter circuits. These structures have been fabricated using YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// or gold conductor-based microstrip lines fabricated on lanthanum aluminate (LaAlO/sub 3/) or magnesium oxide (MgO) substrates coated with an STO thin film. Frequency and phase agility are achieved using the nonlinear dc electric-field dependence of the relative dielectric constant of STO ferroelectric thin him (E/sub rSTO/). In this paper, we will present an assessment of the progress that our group has achieved thus far toward integration of this technology into wireless and satellite communication systems.

Large dielectric tunability and microwave properties of Mn-doped (Ba,Sr)TiO3 thin films

Ferroelectric Ba0.6Sr0.4TiO3 thin films with 2% Mn additional doping were grown on (001) MgO by pulsed laser deposition. The microstructural studies from x-ray diffraction and transmission electron microscopy indicate that the films are highly epitaxial with c-axis oriented and atomic sharp interface. Dielectric property measurements at 1 MHz and room temperature reveal that the as-grown films have outstanding dielectric properties with large tunability of 80% at 40KV∕cm, very large dielectric constant value of 3800, and extra low dielectric loss of only 0.001. The high frequency (10–30 GHz) dielectric measurements demonstrate that the films are excellent in both dielectric property and very low dielectric insertion loss. Compared with the pure BSTO films or traditional doping, the additional doping of Mn in BSTO thin films can significantly improve the dielectric property of the as-grown films.

Challenges and Opportunities for Multi-functional Oxide Thin Films for Voltage Tunable Radio Frequency/Microwave Components

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

Highly Efficient Quantum-Dot Light-Emitting Diodes with DNA−CTMA as a Combined Hole-Transporting and Electron-Blocking Layer

Owing to their narrow bright emission band, broad size-tunable emission wavelength, superior photostability, and excellent flexible-substrate compatibility, light-emitting diodes based on quantum dots (QD-LEDs) are currently under intensive research and development for multiple consumer applications including flat-panel displays and flat lighting. However, their commercialization is still precluded by the slow development to date of efficient QD-LEDs as even the highest reported efficiency of 2.0% cannot favorably compete with their organic counterparts. Here, we report QD-LEDs with a record high efficiency (approximately 4%), high brightness (approximately 6580 cd/m(2)), low turn-on voltage (approximately 2.6 V), and significantly improved color purity by simply using deoxyribonucleic acid (DNA) complexed with cetyltrimetylammonium (CTMA) (DNA-CTMA) as a combined hole transporting and electron-blocking layer (HTL/EBL). This, together with controlled thermal decomposition of ligand molecules from the QD shell, represents a novel combined, but simple and very effective, approach toward the development of highly efficient QD-LEDs with a high color purity.

Generalized Memristive Device SPICE Model and its Application in Circuit Design

This paper presents a SPICE model for memristive devices. It builds on existing models and is correlated against several published device characterization data with an average error of 6.04%. When compared to existing alternatives, the proposed model can more accurately simulate a wide range of published memristors. The model is also tested in large circuits with up to 256 memristors, and was less likely to cause convergence errors when compared to other models. We show that the model can be used to study the impact of memristive device variation within a circuit. We examine the impact of nonuniformity in device state variable dynamics and conductivity on individual memristors as well as a four memristor read/write circuit. These studies show that the model can be used to predict how variation in a memristor wafer may impact circuit performance.

A Si MMIC compatible ferroelectric varactor shunt switch for microwave applications

This letter describes a ferroelectric thin-film based varactor shunt switch, for microwave and millimeterwave switching applications. Our implementation is based on a coplanar waveguide transmission line shunted by a ferroelectric varactor. The concept of switching ON and OFF is based on the dielectric tunability of the ferroelectric barium strontium titanium oxide (BST) thin-films. From experimental verification, the isolation of a switch with a varactor area of 75/spl mu/m/sup 2/ was approximately 20dB at 35GHz and the insertion loss was below 4.5dB up to 35GHz. This letter addresses the design and experimental verification of the first ferroelectric varactor shunt switch with an Si monolithic microwave integrated circuit compatible process.

A K-band-frequency agile microstrip bandpass filter using a thin-film HTS/ferroelectric/dielectric multilayer configuration

In this paper, we report on YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) thin-film/SrTiO/sub 3/ (STO) thin-film K-band tunable bandpass filters on LaAlO/sub 3/ (LAO) dielectric substrates. The two-pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the nonlinear DC electric-field dependence of the relative dielectric constant of STO (/spl epsi//sub r STO/). A large tunability (/spl Delta/f/f/sub 0/=(f/sub V max/-f/sub 0/)/f/sub 0/, where f/sub 0/ is the center frequency of the filter at no bias and f/sub V max/ is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar DC bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication, and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.

Memristor SPICE model and crossbar simulation based on devices with nanosecond switching time

This paper presents a memristor SPICE model that is able to reproduce current-voltage relationships of previously published memristor devices. This SPICE model shows a stronger correlation to various published device data when compared to existing SPICE models. Furthermore, switching characteristics of published memristor devices with switching times in the nanosecond scale were modeled. Therefore, this model can be used to accurately simulate neural systems based on these high-speed memristors. This paper also demonstrates how this model can be used to accurately calculate switching energy of these high-speed devices, leading to more accurate power calculations in memristor based neural systems. Memristor crossbar circuits provide a potential method for developing very high density neural classifiers. This model was able to simulate crossbar circuits containing up to 256 memristors. It is significantly less likely to cause convergence errors when operating in the nanosecond switching regime with a large number of devices when compared with existing SPICE models.

Structural investigations and magnetic properties of sol-gel Ni0.5Zn0.5Fe2O4 thin films for microwave heating

Nanocrystalline Ni0.5Zn0.5Fe2O4 thin films have been synthesized with various grain sizes by a sol-gel method on polycrystalline silicon substrates. The morphology, magnetic, and microwave absorption properties of the films calcined in the 673–1073 K range were studied with x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, vibrating sample magnetometry, and evanescent microwave microscopy. All films were uniform without microcracks. Increasing the calcination temperature from 873 to 1073 K and time from 1 to 3 h resulted in an increase of the grain size from 12 to 27 nm. The saturation and remnant magnetization increased with increasing the grain size, while the coercivity demonstrated a maximum near a critical grain size of 21 nm due to the transition from monodomain to multidomain behavior. The complex permittivity of the Ni–Zn ferrite films was measured in the frequency range of 2–15 GHz. The heating behavior was studied in a multimode microwave cavity at 2.4 GHz. The highest microwave heating rate in the temperature range of 315–355 K was observed in the film close to the critical grain size.

Synthesis and Characterization of Nanostructured BSTO Thin-Films for Microwave Applications

Nanophase synthesis of ferroelectric thin-films of Ba0.6Sr0.4TiO3 (BSTO) was studied systematically for applications in tunable microwave components. Synthesis of nanostructured BSTO was performed using a pulsed-laser deposition system with real-time in-situ process control. The main research goal was to utilize the pulsed laser deposition parameters to control the grain growth for low microwave loss nanostructured BSTO thin-films on crystalline substrates such as LaAlO3. These parameters include the energy density of the laser pulses, wavelength, oxygen partial pressure, distance between the target and the substrate, and the substrate temperature. The nanostructural characterization was performed using XRD, SEM and AFM. Microwave characterization was done using coplanar waveguide lines to characterize the frequency dependent dielectric properties (ϵr and tan δ). BSTO films were grown at the same measured temperature and energy density but in different oxygen ambient pressures from 19 mTorr through 300 mTorr. Using contact mode AFM, the grain size was found to decrease as the oxygen ambient pressure was reduced from 150 mTorr to 38 mTorr. The growth process changed when the pressure was increased above 150 mTorr. Nanocluster structures rather than nanoparticles were found at 225 mTorr. Average grain sizes less than 100 nm were obtained to oxygen pressures below 75 mTorr. The XRD spectra indicate the highly crystalline nature of the film. Microwave measurements, performed between 9–18 GHz, suggest the nano-structured BSTO thin-films on LaAlO3 (LAO) substrates are highly tunable (up to 25%).