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Dive into the research topics where Frédéric Dulot is active.

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Featured researches published by Frédéric Dulot.


Applied Physics Letters | 2002

Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001)

Dirk Sander; Wulf Wulfhekel; Margrit Hanbücken; Serge Nitsche; Jean Pierre Palmari; Frédéric Dulot; François Arnaud d’Avitaya; André Leycuras

6H-SiC(0001) samples have been etched in a hot-wall chemical vapor deposition reactor at a hydrogen pressure of 13 mbar at 1800 ° C . The surface morphology and elemental composition have been studied by scanning electron microscopy and micro-Auger analysis. Stoichiometric etching of SiC with equal atomic concentrations of Si and C is found on the flat sections of the surface, but in hexagonal voids of the SiC samples, a selective removal of C, leading to a pure Si surface at the bottom of the voids, is observed. Fast gas diffusion is the main transport mechanism for etching of the flat surface, while Knudsen diffusion becomes important inside the voids. It is proposed that the lower diffusion constant of reaction products containing Si compared to those containing C, leads to a preferential removal of C and a Si enrichment inside the voids.


Applied Surface Science | 2000

STM-TIP induced surface diffusion of copper on copper (100)

Frédéric Dulot; J Eugène; B. Kierren; D. Malterre

Abstract We report various STM observations which demonstrate that a drastic change of the morphology of a metallic surface can be induced by the tip, at room temperature, even using so-called “standard” tunnelling parameters of about 1 V and 0.5 nA. The results on a 0.75-ML deposit of copper on Cu(100) highlight a strong amplification of the surface diffusion at room temperature. The time scale at which this phenomenon takes place excludes the effect of basic thermal activation. More surprisingly, we show that tip scanning can induce nucleation and growth of monoatomic islands from a bare copper (100) surface.


Journal of Vacuum Science & Technology B | 2002

Controlled tuning of periodic morphologies on vicinal Si(111) surfaces

Pierre-David Szkutnik; Dirk Sander; Frédéric Dulot; François Arnaud d’Avitaya; Margrit Hanbücken

Regular hole patterns have been produced on vicinal Si(111) surfaces by optical lithography. Under heat treatment in ultrahigh vacuum, morphological rearrangements of the patterned surfaces occur. In situ light diffraction experiments were carried out during heat treatment to monitor the formation of the desired morphologies by an observation of the diffraction pattern. The surface morphology was characterized by different microscopy techniques after the heat treatment. Structured surfaces with periodic two-dimensional step arrangements and one-dimensional structures of atomically flat terraces uniformly separated by straight steps were obtained. The periodic structures extend over several μm.


Surface Science | 2004

Regular step formation on concave-shaped surfaces on 6H–SiC(0001)

Wulf Wulfhekel; Dirk Sander; Serge Nitsche; Frédéric Dulot; André Leycuras; Margrit Hanbücken


Applied Surface Science | 2002

Structure and morphology of concave-shaped surfaces on 6H–SiC(0 0 0 1) after H2 etching

Frédéric Dulot; Louay Mansour; André Leycuras; Wulf Wulfhekel; Dirk Sander; François Arnaud d’Avitaya; Margrit Hanbücken


Surface Science | 2001

001) V surface structures analysed by RHEED and STM

Frédéric Dulot; P. Turban; B. Kierren; J. Eugène; M. Alnot; S. Andrieu


Surface Science | 2010

(13×13)R13.9° reconstruction of the Co–Si(1 1 1) surface investigated by high-resolution STM and DFT calculations

L. Chaput; Frédéric Dulot; M.C. Hanf; P. Wetzel


Thin Solid Films | 2003

Determination of kinetic parameters in layer-by-layer growth from RHEED profile analysis

Frédéric Dulot; B. Kierren; D. Malterre


Surface Science | 2008

Nanostructures growth on the Co–Si(1 1 1) (7×7)R19.1° surface reconstruction

Frédéric Dulot; M.C. Hanf; P. Wetzel


Surface Science | 2001

Influence of the initial step density on the growth mechanisms of the Fe/Cu(100) interface

Frédéric Dulot; Bertrand Kierren; Daniel Malterre

Collaboration


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Dirk Sander

Centre national de la recherche scientifique

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M.C. Hanf

Centre national de la recherche scientifique

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P. Wetzel

Centre national de la recherche scientifique

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Wulf Wulfhekel

Karlsruhe Institute of Technology

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André Leycuras

Centre national de la recherche scientifique

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B. Kierren

Centre national de la recherche scientifique

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Régis Stephan

Centre national de la recherche scientifique

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François Arnaud d’Avitaya

Centre national de la recherche scientifique

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Serge Nitsche

Centre national de la recherche scientifique

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