Fucong Fei

Nontrivial Berry phase and type-II Dirac transport in the layered material PdT e 2

Recently, the picture of type-II energy dispersion with broken Lorentz invariance has been adapted from Weyl to Dirac fermions. It is demonstrated in PdTe

Solvothermal Synthesis of Lateral Heterojunction Sb2Te3/Bi2Te3 Nanoplates

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Anomalous quantization trajectory and parity anomaly in Co cluster decorated BiSbTeSe 2 nanodevices

in this paper by extensive evidence from electrical transport, de Haas--van Alphen oscillations, first-principles calculations, and angle-resolved photoemission spectroscopy. The type-II Dirac cone looks like a pinnacle in momentum space. It may be cut by the Fermi level with the result of a pair of Dirac pockets (of

Tuning the electrical transport of type II Weyl semimetal WTe 2 nanodevices by Ga+ ion implantation

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Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping

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Band Structure Perfection and Superconductivity in Type-II Dirac Semimetal Ir1− x Pt x Te2

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Oscillating planar Hall response in bulk crystal of topological insulator Sn doped Bi1.1Sb0.9Te2S

type), whose sizes change dramatically with the Fermi level. The nontrivial Berry phase of the hole pocket is also displayed. This also means a nonvanishing density of states in the whole Dirac cones, which makes PdTe

Stepwise quantized surface states and delayed Landau level hybridization in Co cluster-decorated BiSbTeSe2 topological insulator devices

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Oscillating planar Hall response from the surface electrons in bulk crystal Sn doped Bi1.1Sb0.9Te2S

an improved platform for possible topological superconductors and Majorana fermions

Quantum oscillations in type-II Dirac semimetal PtTe2

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. The semiconducting temperature-resistance curve and crossjunction rectification were observed, which reveal a staggered-gap lateral heterojunction with a small junction voltage. Quantum correction from the weak antilocalization reveals the well-maintained transport of the topological surface state. This is appealing for a platform for spin filters and one-dimensional topological interface states.