Haijun Bu
Nanjing University
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Publication
Featured researches published by Haijun Bu.
Nature Communications | 2016
Ilya Belopolski; Daniel S. Sanchez; Y. Ishida; Xingchen Pan; Peng Yu; Su Yang Xu; Guoqing Chang; Tay-Rong Chang; Hao Zheng; Nasser Alidoust; Guang Bian; Madhab Neupane; Shin-Ming Huang; Chi Cheng Lee; You Song; Haijun Bu; Guanghou Wang; Shisheng Li; Goki Eda; Horng-Tay Jeng; Takeshi Kondo; Hsin Lin; Zheng Liu; Fengqi Song; Shik Shin; M. Zahid Hasan
The recent discovery of a Weyl semimetal in TaAs offers the first Weyl fermion observed in nature and dramatically broadens the classification of topological phases. However, in TaAs it has proven challenging to study the rich transport phenomena arising from emergent Weyl fermions. The series MoxW1−xTe2 are inversion-breaking, layered, tunable semimetals already under study as a promising platform for new electronics and recently proposed to host Type II, or strongly Lorentz-violating, Weyl fermions. Here we report the discovery of a Weyl semimetal in MoxW1−xTe2 at x=25%. We use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe a topological Fermi arc above the Fermi level, demonstrating a Weyl semimetal. The excellent agreement with calculation suggests that MoxW1−xTe2 is a Type II Weyl semimetal. We also find that certain Weyl points are at the Fermi level, making MoxW1−xTe2 a promising platform for transport and optics experiments on Weyl semimetals.
Applied Physics Letters | 1999
Weiping Li; R. Zhang; Yuming Zhou; J. Yin; Haijun Bu; Z. Y. Luo; B. G. Shen; Y. Shi; R. L. Jiang; S. L. Gu; Z. G. Liu; Y. D. Zheng; Z.C. Huang
A GaN-based metal–insulator–semiconductor (MIS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 instead of conventional oxides as insulator gate. Because of the polarization field provided by ferroelectric and the high dielectric constant of ferroelectric insulator, the capacitance–voltage characteristics of GaN-based metal–ferroelectric–semiconductor (MFS) structures are markedly improved compared to those of other previously studied GaN MIS structures. The GaN active layer in MFS structures can reach inversion just under the bias of smaller than 5 V, which is the generally applied voltage used in semiconductor-based integrated circuits. The surface carrier concentration of the GaN layer in the MFS structure is decreased by one order compared with the background carrier concentration. The GaN MFS structures look promising for the practical application of GaN-based field effect transistors.
Physical Review B | 2017
Fucong Fei; Xiangyan Bo; R.Z. Wang; Bin Wu; Juan Jiang; Dongzhi Fu; Ming Gao; Hao Zheng; Yulin Chen; Xuefeng Wang; Haijun Bu; Fengqi Song; Xiangang Wan; Baigeng Wang; Guanghou Wang
Recently, the picture of type-II energy dispersion with broken Lorentz invariance has been adapted from Weyl to Dirac fermions. It is demonstrated in PdTe
Applied Physics Letters | 2000
Haijun Bu; Y. Shi; X.L. Yuan; Juefei Wu; S. L. Gu; Y. D. Zheng; H. Majima; Hiroki Ishikuro; Toshiro Hiramoto
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Solid-state Electronics | 2001
H.G. Yang; Y. Shi; Haijun Bu; Juefei Wu; B. Zhao; X.L. Yuan; B. G. Shen; P. Han; R. Zhang; Y. D. Zheng
in this paper by extensive evidence from electrical transport, de Haas--van Alphen oscillations, first-principles calculations, and angle-resolved photoemission spectroscopy. The type-II Dirac cone looks like a pinnacle in momentum space. It may be cut by the Fermi level with the result of a pair of Dirac pockets (of
arXiv: Mesoscale and Nanoscale Physics | 2017
Yuze Meng; Chongyi Ling; Run Xin; Peng Wang; You Song; Haijun Bu; Si Gao; Xuefeng Wang; Fengqi Song; Jinlan Wang; Xinran Wang; Baigeng Wang; Guanghou Wang
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Applied Physics Letters | 2016
Yuyuan Qin; S. M. Wang; Rui Wang; Haijun Bu; Xuefeng Wang; Xinran Wang; Fengqi Song; Baigeng Wang; Guanghou Wang
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Journal of Physics D | 2008
Fengqi Song; Feng Zhou; Haijun Bu; Xiaoshu Wang; Longbing He; Min Han; Jianguo Wan; Jianfeng Zhou; Guanghou Wang
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Semiconductor Science and Technology | 2001
Y. Shi; Haijun Bu; X.L. Yuan; S. L. Gu; B. Shen; P. Han; R. Zhang; Y. D. Zheng
type), whose sizes change dramatically with the Fermi level. The nontrivial Berry phase of the hole pocket is also displayed. This also means a nonvanishing density of states in the whole Dirac cones, which makes PdTe
Advanced Materials | 2018
Fucong Fei; Xiangyan Bo; Pengdong Wang; Jianghua Ying; Jian Li; Ke Chen; Qing Dai; Bo Chen; Zhe Sun; Minhao Zhang; Fanming Qu; Yi Zhang; Qianghua Wang; Xuefeng Wang; Lu Cao; Haijun Bu; Fengqi Song; Xiangang Wan; Baigeng Wang
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