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Featured researches published by Fumiharu Teramae.


Proceedings of SPIE, the International Society for Optical Engineering | 2009

Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate

T. Seko; S. Mabuchi; Fumiharu Teramae; Atushi Suzuki; Y. Kaneko; Ryosuke Kawai; Satoshi Kamiyama; Motoaki Iwaya; Hiroshi Amano; Isamu Akasaki

To realize high-efficiency light-emitting diodes (LEDs), it is indispensable to increase light extraction efficiency. We propose the moth-eye structure on the surface of an LED chip, which consists of periodic cones with a pitch of optical wavelength scale, and enables the significantly enhancement of light extraction efficiency. We have developed a new technique for moth-eye structure fabrication, on the basis of low-energy electron-beam projection lithography (LEEPL), which can be applied to the mass production of LEDs. The moth-eye structure formed at the bottom of a SiC wafer has periodically arranged cones with a 300 nm pitch and a 750 nm height. We also present blue LEDs fabricated on SiC substrates with and without the moth-eye structure, and discuss the effect of the moth-eye structure on the performance of LEDs.


Japanese Journal of Applied Physics | 2006

Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor

Mitsuhiro Mizutani; Fumiharu Teramae; Kazutaka Takeuchi; Tatsunori Murase; Shigeya Naritsuka; Takahiro Maruyama

A vertical-cavity surface-emitting laser (VCSEL) was fabricated using a in situ reflectance monitor by molecular beam epitaxy (MBE). Both the center wavelength of the stop band of the distributed Bragg reflector (DBR) and the resonant wavelength of the optical cavity were successfully controlled using the monitor. However, these wavelengths shifted with decreasing substrate temperature after the growth, which could be reasonably explained by the temperature dependence of refractive index. Therefore, it is necessary to set a target wavelength at a growth temperature, considering the change. The desirable laser performance of the VCSEL fabricated from the wafer indicates marked increases in the controllability and reproducibility of growth with the aid of the in situ reflectance monitor. Since it can directly measure the optical properties of the grown layers, the reflectance monitor greatly helps in the fabrication of a structure with the designed optical performance.


Archive | 2008

Light-emitting device, sapphire substrate for light-emitting device, and method of manufacturing sapphire substrate for light-emitting device

Satoshi Kamiyama; Yukio Kaneko; Toshiyuki Kondo; Atsushi Suzuki; Fumiharu Teramae; 智 上山; 文晴 寺前; 俊行 近藤; 由基夫 金子; 敦 鈴木


Physica Status Solidi (c) | 2010

High efficiency violet to blue light emission in porous SiC produced by anodic method

Takuya Nishimura; K. Miyoshi; Fumiharu Teramae; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki


Archive | 2011

GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

Tsukasa Kitano; Koichi Naniwae; Masayoshi Koike; Fumiharu Teramae; Toshiyuki Kondo; Atsushi Suzuki; Tomohiko Maeda; Midori Mori


Physica Status Solidi (c) | 2006

Precise control of growth of DBR by MBE using in-situ reflectance monitoring system

M. Mizutani; Fumiharu Teramae; O. Kobayashi; Shigeya Naritsuka; Takahiro Maruyama


Archive | 2013

SiC FLUORESCENT MATERIAL, METHOD FOR PRODUCING SAME AND LUMINESCENT ELEMENT

Tomohiko Maeda; Fumiharu Teramae; Koichi Naniwae


Archive | 2012

Method of manufacturing glass substrate with concave-convex flim using dry etching, glass substrate with concave-convex film, solar cell, and method of manufacturing solar cell

Fumiharu Teramae; Koichi Maniwae; Tsukasa Kitano; Toshiyuki Kondo; Atsushi Suzuki; Midori Mori


Archive | 2012

Production method using dry etching of glass substrate having concave-convex film, glass substrate having concave-convex film, solar cell, and production method for solar cell

Fumiharu Teramae; 寺前文晴; Koichi Naniwae; 難波江宏一; Tsukasa Kitano; 北野司; Toshiyuki Kondo; 近藤俊行; Atsushi Suzuki; 鈴木敦志; Midori Mori; 森みどり


Archive | 2011

Group III nitride semiconductor device and method for manufacturing the same

Tsukasa Kitano; Koichi Naniwae; Masayoshi Koike; Fumiharu Teramae; Toshiyuki Kondo; Atsushi Suzuki; Tomohiko Maeda; Midori Mori

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Satoshi Kamiyama

National Institute for Materials Science

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