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Isamu Akasaki

Agilent Technologies

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Publication

Featured researches published by Isamu Akasaki.

Archive | 1998

Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency

T. Takeuchi; Norihide Yamada; Hiroshi Amano; Isamu Akasaki

Archive | 1991

Vapor growth device for compound semiconductor

Isamu Akasaki; Hiroshi Amano; Kazumasa Hiramatsu; Atsushi Watanabe; 浩 天野; 和政 平松; 温 渡辺

Journal of the Japanese Association of Crystal Growth | 1989

Effects of Buffer Layer in MOVPE Growth of GaN Film on Sapphire Substrate

Kazumasa Hiramatsu; Hiroshi Amano; Norikatsu Koide; Isamu Akasaki

Archive | 2005

Herstellungsverfahren für ein halbleiter-lichtemissionselement und halbleiter-lichtemissionselement

Satoshi Kamiyama; Hiroshi Amano; Motoaki Iwaya; Isamu Akasaki; Hideki Kasugai

Archive | 1999

Epitaxial aluminum-gallium-nitride semiconductor substrate and method of manufacture therefor

Nobuaki Hayashi; T. Takeuchi; Hiroshi Amano; Isamu Akasaki

Japanese journal of applied physics. Pt. 1, Regular papers & short notes | 1991

Raman Scattering in ZnS_xSe_ Alloys

Kouji Hayashi; Nobuhiko Sawaki; Isamu Akasaki

Archive | 1990

MOVPE-Verfahren zur Erzeugung einer Pufferschicht mit einer Mischung aus einkristallinem und amorphem Zustand MOVPE method of producing a buffer layer comprising a mixture of single crystal and amorphous state

Katsuhide Manabe; Hisaki Kato; Isamu Akasaki; Kazumasa Hiramatsu; Hiroshi Amano

Archive | 1990

Substrat zum wachsenlassen eines galliumnitridverbindung-halbleiterbauelements und lichtemitterdiode Substrate for growing gallium nitride leave a semiconductor element and light emitter diode

Katsuhide Manabe; Hisaki Kato; Isamu Akasaki; Kazumasa Hiramatsu; Hiroshi Amano

Archive | 1988

Gallium-Nitrid Halbleiter-Lumisneszenzdiode sowie Verfahren zu deren Herstellung. Gallium nitride semiconductor Lumisneszenzdiode as well as methods for their preparation.

Katsuhide Manabe; Nobuo Okazaki; Isamu Akasaki; Kazumasa Hiramatsu; Hiroshi Amano

Japanese journal of applied physics. Pt. 1, Regular papers & short notes | 1988

Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices

Kouji Hayashi; Hideo Goto; Nobuhiko Sawaki; Isamu Akasaki

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Hiroshi Amano

Agilent Technologies

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Kazumasa Hiramatsu

Mitsubishi

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Nobuhiko Sawaki

Mie University

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Katsuhide Manabe

Mie University

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T. Takeuchi

Agilent Technologies

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Hisaki Kato

Meijo University

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Kouji Hayashi

Nagoya University

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Y. Koide

Nagoya University

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Nobuaki Hayashi

Agilent Technologies

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Norihide Yamada

Agilent Technologies

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