Funan Tan

Characterizing the spin orbit torque field-like term in in-plane magnetic system using transverse field

In this work, we present an efficient method for characterizing the spin orbit torque field-like term in an in-plane magnetized system using the harmonic measurement technique. This method does not require a priori knowledge of the planar and anomalous hall resistances and is insensitive to non-uniformity in magnetization, as opposed to the conventional harmonic technique. We theoretically and experimentally demonstrate that the field-like term in the Ta/Co/Pt film stack with in-plane magnetic anisotropy can be obtained by an in-plane transverse field sweep as expected, and magnetization non-uniformity is prevented by the application of fixed magnetic field. The experimental results are in agreement with the analytical calculations.

Oxide-based RRAM materials for neuromorphic computing

In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic computing, followed by a review of a variety of RRAM oxide materials (PCMO, HfOx, TaOx, TiOx, NiOx, etc.) with a focus on their application for neuromorphic computing. Our goal is to give a broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field.

Observation of large planar Hall effect on the current induced spin-orbit effective fields in Ta/MgO/CoFeB/Ta

Current induced spin-orbit effective magnetic fields in metal/ferromagnet/ oxide trilayer provide an alternative switching mechanism that is more efficient than the conventional spin torque transfer.