G. Autès
École Polytechnique Fédérale de Lausanne
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Featured researches published by G. Autès.
Nature Communications | 2016
N. Xu; Hongming Weng; B. Q. Lv; C. E. Matt; J. Park; F. Bisti; V. N. Strocov; D. Gawryluk; E. Pomjakushina; K. Conder; N. C. Plumb; M. Radovic; G. Autès; Oleg V. Yazyev; Zhong Fang; X. Dai; T. Qian; J. Mesot; H. Ding; M. Shi
A Weyl semimetal possesses spin-polarized band-crossings, called Weyl nodes, connected by topological surface arcs. The low-energy excitations near the crossing points behave the same as massless Weyl fermions, leading to exotic properties like chiral anomaly. To have the transport properties dominated by Weyl fermions, Weyl nodes need to locate nearly at the chemical potential and enclosed by pairs of individual Fermi surfaces with non-zero Fermi Chern numbers. Combining angle-resolved photoemission spectroscopy and first-principles calculation, here we show that TaP is a Weyl semimetal with only a single type of Weyl fermions, topologically distinguished from TaAs where two types of Weyl fermions contribute to the low-energy physical properties. The simple Weyl fermions in TaP are not only of fundamental interests but also of great potential for future applications. Fermi arcs on the Ta-terminated surface are observed, which appear in a different pattern from that on the As-termination in TaAs and NbAs.
Physical Review Letters | 2012
A. Crepaldi; Luca Moreschini; G. Autès; C. Tournier-Colletta; Simon Moser; Naunidh Virk; H. Berger; Ph. Bugnon; Young Jun Chang; Klaus Kern; E. Rotenberg; Oleg V. Yazyev; M. Grioni
We observe a giant spin-orbit splitting in the bulk and surface states of the noncentrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases, it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics-a large, robust spin splitting and ambipolar conduction-are present in this material.
Physical Review Letters | 2016
G. Autès; Dominik Gresch; Matthias Troyer; Alexey A. Soluyanov; Oleg V. Yazyev
The recently discovered type-II Weyl points appear at the boundary between electron and hole pockets. Type-II Weyl semimetals that host such points are predicted to exhibit a new type of chiral anomaly and possess thermodynamic properties very different from their type-I counterparts. In this Letter, we describe the prediction of a type-II Weyl semimetal phase in the transition metal diphosphides MoP_{2} and WP_{2}. These materials are characterized by relatively simple band structures with four pairs of type-II Weyl points. Neighboring Weyl points have the same chirality, which makes the predicted topological phase robust with respect to small perturbations of the crystalline lattice. In addition, this peculiar arrangement of the Weyl points results in long topological Fermi arcs, thus making them readily accessible in angle-resolved photoemission spectroscopy.
Physical Review B | 2017
Dominik Gresch; G. Autès; Oleg V. Yazyev; Matthias Troyer; David Vanderbilt; B. Andrei Bernevig; Alexey A. Soluyanov
The intense theoretical and experimental interest in topological insulators and semimetals has established band structure topology as a fundamental material property. Consequently, identifying band topologies has become an important, but often challenging, problem, with no exhaustive solution at the present time. In this work we compile a series of techniques, some previously known, that allow for a solution to this problem for a large set of the possible band topologies. The method is based on tracking hybrid Wannier charge centers computed for relevant Bloch states, and it works at all levels of materials modeling: continuous k . p models, tight-binding models, and ab initio calculations. We apply the method to compute and identify Chern, Z(2), and crystalline topological insulators, as well as topological semimetal phases, using real material examples. Moreover, we provide a numerical implementation of this technique (the Z2Pack software package) that is ideally suited for high-throughput screening of materials databases for compounds with nontrivial topologies. We expect that our work will allow researchers to (a) identify topological materials optimal for experimental probes, (b) classify existing compounds, and (c) reveal materials that host novel, not yet described, topological states.
Nature Communications | 2015
Muhammed Malik Benameur; Fernando Gargiulo; Sajedeh Manzeli; G. Autès; Mahmut Tosun; Oleg V. Yazyev; Andras Kis
Nanoelectromechanical systems constitute a class of devices lying at the interface between fundamental research and technological applications. Realizing nanoelectromechanical devices based on novel materials such as graphene allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron–phonon interaction and bandgap engineering. In this work, we realize electromechanical devices using single and bilayer graphene and probe the interplay between their mechanical and electrical properties. We show that the deflection of monolayer graphene nanoribbons results in a linear increase in their electrical resistance. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. The proposed theoretical model suggests that these oscillations arise from quantum mechanical interference in the transition region induced by sliding of individual graphene layers with respect to each other. Our work shows that bilayer graphene conceals unexpectedly rich and novel physics with promising potential in applications based on nanoelectromechanical systems.
Physical Review B | 2008
G. Autès; Cyrille Barreteau; D. Spanjaard; M.C. Desjonquères
We present a theoretical study of spin polarized transport in Fe atomic contacts using a self-consistent tight-binding Hamiltonian in a non-orthogonal
Journal of Physics: Condensed Matter | 2006
G. Autès; Cyrille Barreteau; D. Spanjaard; M.C. Desjonquères
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Physical Review Letters | 2014
Fernando Gargiulo; G. Autès; Naunidh Virk; Stefan Barthel; Malte Rösner; Lisa R. M. Toller; T. O. Wehling; Oleg V. Yazyev
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Physical Review B | 2014
A. Crepaldi; Federico Cilento; M. Zacchigna; M. Zonno; Jens Christian Johannsen; C. Tournier-Colletta; Luca Moreschini; I. Vobornik; F. Bondino; E. Magnano; H. Berger; Arnaud Magrez; Ph. Bugnon; G. Autès; Oleg V. Yazyev; M. Grioni; F. Parmigiani
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Physical Review B | 2014
T. Eelbo; M. Wasniowska; M. Sikora; M. Dobrzański; A. Kozłowski; Artem Pulkin; G. Autès; I. Miotkowski; Oleg V. Yazyev; R. Wiesendanger
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