G. Gerber

Femtosecond laser assisted scanning tunneling microscopy

The excitation of the tunneling junction of a scanning tunneling microscope using ultrashort laser pulses combined with detection of a tunneling current component which depends nonlinearly on the laser intensity allows, in principle, to simultaneously obtain ultimate spatial and temporal resolution. To achieve this goal, a laser system that produces ultrashort laser pulses is combined with an ultrahigh vacuum scanning tunneling microscope. The basic technical considerations are discussed and it is shown that atomic resolution can be achieved under pulsed laser excitation of the tunneling junction. The pulsed illumination gives rise to several contributions to the measured total current. Experimental evidence for signal contributions due to thermal expansion, transient surface potentials and multiphoton photoemission are presented.

Silver nanoparticles on graphite studied by femtosecond time-resolved multiphoton photoemission

Time-resolved multiphoton photoelectron spectroscopy is employed to study collective excitations and their decay dynamics in silver nanoparticles on highly oriented pyrolytic graphite. Resonant excitation of the surface plasmon in the silver nanoparticles with 400 nm femtosecond radiation allows to distinguish between photoemission from the nanoparticles and the substrate. This extends the method of time-resolved two-photon photoemission spectroscopy to inhomogeneous surfaces and permits to probe the dynamics of a confined electron gas. The multiphoton photoelectron spectra, the polarization dependence of the photoelectron yield and the time-resolved measurements reveal the double excitation of the surface plasmon and allow the identification of two different decay channels of the collective excitation. The multiply excited plasmon transfers its total excitation energy to a single photoelectron or decays into at least two single-particle excitations which share the total energy.

Hot electron tunneling in femtosecond laser-assisted scanning tunneling microscopy

The combination of scanning tunneling microscopy with femtosecond laser spectroscopy yields simultaneously ultimate spatial and temporal resolution. One possibility to realize this combination is the direct excitation of the tunnel junction in a pump–probe configuration and the detection of a tunnel current component that depends nonlinearly on the laser intensity. The laser-induced signal is expected to be very small, therefore a suitable sample material and a modulation technique is required. In measurements on a GaP(100) surface evidence for tunneling of hot electrons is obtained giving the possibility for local time-resolved tunneling spectroscopy.

Femtosecond photoemission studies of the transient electron temperature in supported metal nanoparticles

Double excitation of the surface plasmon with 388 nm (3.2 eV) femtosecond radiation allows to distinguish photoemission from silver nanoparticles and substrate . We apply time-resolved photoemission to measure the electron temperature in the nanoparticles subsequent to excitation with a 776 nm (1.6 eV) femtosecond pulse.

Femtosecond multiphoton photoemission of silver nanoparticles on graphite

Time-resolved multiphoton photoelectron spectroscopy using resonant excitation of the surface plasmon in nanoparticles permits the investigation of the electron dynamics in silver nanoparticles grown on graphite. The multiphoton photoelectron spectra, the polarization dependence of the photoelectron yield and the time-resolved measurements reveal the double excitation of the surface plasmon. Time-resolved spectroscopy gives information on the electronic temperature and the electron-phonon coupling in the nanoparticles.

Combination of Scanning Tunneling Microscopy and Ultrafast Laser Spectroscopy

In recent years the application of ultrafast laser spectroscopy in solid state physics has revealed a tremendous amount of information on hot carrier distributions in bulk metals, semiconductors and insulators. Especially the study of relaxation and recombination processes in semiconductors and semiconductor heterostructures is of major importance for optoelectronic applications. In heterostructures it is possible to observe coherent wave packet dynamics over several picoseconds. This indicates that incoherent processes, usually dominant in bulk materials can be suppressed by careful sample design. A major breakthrough in these bulk experiments was achieved due to the elimination of surface effects by the use of heterostructures acting as confinement for the photogenerated carriers. Beside the fact that carrier relaxation and recombination via the surface is an extremely fast and efficient process little is known about the basic mechanisms of surface induced relaxation processes. Time resolved investigations of electronic dynamics at surfaces open therefore a new and exciting field for fundamental and applied research.