G. Jnawali

Observation of a Transient Decrease in Terahertz Conductivity of Single-Layer Graphene Induced by Ultrafast Optical Excitation

We have measured the terahertz frequency-dependent sheet conductivity and its transient response following femtosecond optical excitation for single-layer graphene samples grown by chemical vapor deposition. The conductivity of the unexcited graphene sheet, which was spontaneously doped, showed a strong free-carrier response. The THz conductivity matched a Drude model over the available THz spectral range and yielded an average carrier scattering time of 70 fs. Upon photoexcitation, we observed a transient decrease in graphene conductivity. The THz frequency-dependence of the graphene photoresponse differs from that of the unexcited material but remains compatible with a Drude form. We show that the negative photoconductive response arises from an increase in the carrier scattering rate, with a minor offsetting increase in the Drude weight. This behavior, which differs in sign from that reported previously for epitaxial graphene, is expected for samples with relatively high mobilities and doping levels. The photoinduced conductivity transient has a picosecond lifetime and is associated with nonequilibrium excitation conditions in the graphene.

Interplay of Wrinkles, Strain, and Lattice Parameter in Graphene on Iridium

Following graphene growth by thermal decomposition of ethylene on Ir(111) at high temperatures we analyzed the strain state and the wrinkle formation kinetics as function of temperature. Using the moiré spot separation in a low energy electron diffraction pattern as a magnifying mechanism for the difference in the lattice parameters between Ir and graphene, we achieved an unrivaled relative precision of ±0.1 pm for the graphene lattice parameter. Our data reveals a characteristic hysteresis of the graphene lattice parameter that is explained by the interplay of reversible wrinkle formation and film strain. We show that graphene on Ir(111) always exhibits residual compressive strain at room temperature. Our results provide important guidelines for strategies to avoid wrinkling.

Growth temperature dependent graphene alignment on Ir(111)

The morphology of graphene monolayers on Ir(111) prepared by thermal decomposition of ethylene between 1000 and 1530 K was studied with high resolution low energy electron diffraction. In addition to a well-oriented epitaxial phase, randomly oriented domains are observed for growth temperatures between 1255 and 1460 K. For rotational angles of ±3° around 30° these domains lock-in in a 30° oriented epitaxial phase. Below 1200 K the graphene layer exhibits high disorder and structural disintegrity. Above 1500 K the clear moire spots reflect graphene in a single orientation epitaxial incommensurate phase.

Observation of Ground- and Excited-State Charge Transfer at the C60/Graphene Interface.

We examine charge transfer interactions in the hybrid system of a film of C60 molecules deposited on single-layer graphene using Raman spectroscopy and Terahertz (THz) time-domain spectroscopy. In the absence of photoexcitation, we find that the C60 molecules in the deposited film act as electron acceptors for graphene, yielding increased hole doping in the graphene layer. Hole doping of the graphene film by a uniform C60 film at a level of 5.6 × 10(12)/cm(2) or 0.04 holes per interfacial C60 molecule was determined by the use of both Raman and THz spectroscopy. We also investigate transient charge transfer occurring upon photoexcitation by femtosecond laser pulses with a photon energy of 3.1 eV. The C60/graphene hybrid exhibits a short-lived (ps) decrease in THz conductivity, followed by a long-lived increase in conductivity. The initial negative photoconductivity transient, which decays within 2 ps, reflects the intrinsic photoresponse of graphene. The longer-lived positive conductivity transient, with a lifetime on the order of 100 ps, is attributed to photoinduced hole doping of graphene by interfacial charge transfer. We discuss possible microscopic pathways for hot carrier processes in the hybrid system.

Anisotropic scattering of surface state electrons at a point defect on Bi(111)

Scanning tunneling microscopy was applied to study the lateral variation of the local density of electronic states on the Bi(111) surface in the vicinity of a point defect. At an energy close to the Fermi level a characteristic pattern with a threefold symmetry is found. The pattern can be attributed to the scattering between two electronic surface states which are split by spin orbit coupling. The observation is well described by the superposition of three monochromatic waves. The phase of the waves relative to the center of the defect leads to a reduction to a threefold symmetry.

Interplay between forward and backward scattering of spin-orbit split surface states of Bi(111).

The electronic structure at the surface of Bi(111) enables us to study the effect of defects scattering into multiple channels. By performing scanning tunneling spectroscopy near step edges, we analyze the resulting oscillations in the local density of electronic states (LDOS) as function of position. At a given energy, forward and backward scattering not only occur simultaneously but may contribute to the same scattering vector Δk. If the scattering phase of both processes differs by π and the amplitudes are almost equal, the oscillations cancel out. A sharp dip in the magnitude of the Fourier transform of the LDOS marks the crossover between forward and backward scattering channels.

Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction

The precise knowledge of the diffraction condition, i.e., the angle of incidence and electron energy, is crucial for the study of surface morphology through spot profile analysis low-energy electron diffraction (LEED). We demonstrate four different procedures to determine the diffraction condition: employing the distortion of the LEED pattern under large angles of incidence, the layer-by-layer growth oscillations during homoepitaxial growth, a G(S) analysis of a rough surface, and the intersection of facet rods with 3D Bragg conditions.

Stable tungsten disilicide contacts for surface and thin film resistivity measurements

High-temperature stable electric contacts of tungsten disilicide (WSi2) on Si(001) are fabricated by a simple two-step process: vacuum deposition of W on the native Si dioxide and subsequent annealing under ultrahigh-vacuum conditions. Silicidation starts at 1000K, as, it is believed to occur, the Si diffuses to the surface through the defects in the oxide. Flash annealing to 1500K removes the oxide, resulting in stable WSi2 contacts on the surface. Contamination due to migrating W is confined to within a micrometer of the edge of the WSi2 contacts. Beyond this micrometer-sized zone, the surface is free of contamination as confirmed by low-energy electron microscopy and high-resolution low-energy electron diffraction. Reproducible resistance curves during annealing and cooling of the Si(001) sample confirm the reliability of the contacts, which can withstand many flash-annealing cycles without degradation.

Lattice-matching periodic array of misfit dislocations: Heteroepitaxy of Bi(111) on Si(001)

In spite of the large lattice mismatch between Bi and Si, it is possible to grow expitaxial Bi(111) films on Si(001) substrates, which are atomically smooth and almost free of defects. The remaining lattice mismatch of 2.3% is accommodated by the formation of a periodic array of edge-type dislocations confined to the interface. The strain fields surrounding each dislocation cause a weak periodic surface undulation, which results in the splitting of all spots in low-energy electron diffraction (LEED). From a high resolution spot profile analyzing LEED study, an amplitude of 0.66 A and a separation of 200 A were derived. Comparison with elasticity theory gives a full lattice spacing of the Si surface as a Burgers vector b-vector=(1/2)[110] of the misfit dislocation array. With increasing thickness, the Bi film relaxes toward its bulk lattice constant.

Erratum: Epitaxial Growth of Bi(111) on Si(001) [e-J. Surf. Sci. Nanotech. Vol. 7, pp. 441-447 (2009)]

In this article [1], one of the coauthors, B. Krenzer, is missing in the author list by mistake. The correct author list is the same as the one shown in this erratum.