G. Kamler

High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy

We report on the InGaN multi-quantum well laser diodes (LDs) made by RF plasma-assisted molecular beam epitaxy (PAMBE). The laser operation was demonstrated in a temperature range from 297 K up to 360 K with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for these LDs were 9 kA cm−2 (680 mA) and 8.2 V respectively at 297 K. The slope efficiency is 0.35–0.47 W A−1. A high output power of 1.1 W was obtained during pulse operation for 3.6 A and 8.7 V. We compare parameters of laser diodes with two and five InGaN/InGaN quantum wells. The new, low temperature growth mechanism which enhances surface adatom kinetics, together with bulk GaN low dislocation density substrates allowed us to grow high quality laser diode structures. Our result indicates that there are no intrinsic limitations in the growth of nitride-based optoelectronic devices by PAMBE.

Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is described. The initial growth conditions for HVPE are determined and applied for further bulk growth. Smooth GaN layers up to 1.1 mm thick and of excellent crystalline quality, without cracks, and with low dislocation density are obtained. Preparation of the free-standing HVPE-GaN crystal by slicing and structural and optical quality of the resulting wafer are presented.

Free and bound excitons in GaN∕AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (112¯0) direction

Nonpolar multiple quantum wells (MQWs) have been grown by plasma assisted molecular beam epitaxy on bulk GaN crystals oriented along the (112¯0) direction. The photoluminescence intensity of the nonpolar MQWs was significantly higher than that found for the polar samples, both at low (10 K) and room temperature. This is a consequence of the lack of built-in electric field in samples grown along the (112¯0) direction. Clearly resolved spectra of the excitons have been observed in the studied MQWs. Studies of these excitonic structures, by means of polarization and temperature measurements enabled us to assign the observed lines to free and bound excitons in GaN quantum wells.

Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices

One of the most important problems in III-nitride violet laser diode technology is the lattice mismatch between the AlGaN cladding layers and the rest of the epitaxial structure. For efficiently working devices, it is necessary to have both a high Al content and thick claddings. This leads, however, to severe sample bowing and even cracking of the upper layer. In this work, we propose a cladding structure of strain-compensated AlGaN∕GaN∕InGaN superlattice grown by metal-organic vapor phase epitaxy on bulk GaN substrates. Various thicknesses and compositions of the layers were employed. We measured the radius of bowing, lattice mismatches, aluminum and indium contents, and densities of threading dislocations. The proposed cladding structures suppress bowing and cracking, which are the two parasitic effects commonly experienced in laser diodes with bulk AlGaN claddings. The suppression of cracking and bowing is shown to occur due to modified strain energy distribution of the superlattices structure.

Optically pumped GaN∕AlGaN separate-confinement heterostructure laser grown along the (112¯0) nonpolar direction

This letter concerns experiments on optically pumped GaN∕AlGaN separate-confinement heterostructure laser structures grown by plasma assisted molecular beam epitaxy. The structures were grown along the (112¯0) nonpolar crystallographic direction on a bulk GaN substrate. Different widths of GaN quantum wells were applied in the studied structures. Laser action is clearly demonstrated by the spontaneous emission saturation, abrupt line narrowing, and strong TE polarization of output light. A lasing threshold was reached at an excitation power density of 260kW∕cm2 for a 700-μm-long cavity at room temperature.

Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds

Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is overviewed. Morphology of the crystal growing surface at the beginning of the crystallization process and at the end of it is presented. Based on these results a rough growth model is proposed. Smooth GaN layers up to 1 mm thick and of a high purity, excellent crystalline quality, without any cracks, and with a low dislocation density are grown. Preparation of the free-standing HVPE-GaN crystals by slicing as well as structural, electrical and optical qualities of the resulting wafers are reported and discussed.

HVPE-GaN growth on ammonothermal GaN crystals

HVPE crystallization on ammonothermaly grown GaN crystals (A-GaN) is described. Preparation of the (0001) surface of the A-GaN crystals to the epi-ready state is presented. The HVPE initial growth conditions are determined and demonstrated. An influence of a thickness and a free carrier concentration in the initial substrate on quality and mode of growth by the HVPE is examined. Smooth GaN layers of excellent crystalline quality, without cracks, and with low dislocation density are obtained.

Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds

In this chapter, the problems related to bulk crystallization of GaN by HVPE are discussed. High quality small single crystalline GaN seeds grown under high pressure and large, flat, free standing GaN substrates grown by HVPE were used in long duration HVPE experiments. The characterization results of the obtained bulk crystals suggest that strong dependence of physical properties (mostly oxygen content) on the orientation of the crystallization front is the main reason for strain and structural defects generation in the new grown material.

Low dislocation density, high power InGaN laser diodes

We used single crystals of GaN, obtained from high-pressure synthesis, as substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV laser diodes. The use of high-quality bulk GaN leads to the decrease of the dislocation density to the low level of 10 5 cm −2 , i.e. two orders of magnitude better than typical for the Epitaxial Lateral Overgrowth laser structures fabricated on sapphire. The low density and homogeneous distribution of defects in our structures enables the realization of broad stripe laser diodes. We demonstrate that our laser diodes, having 15 μm wide stripes, are able to emit 1.3-1.9 W per facet (50% reflectivity) in 30 ns long pulses. This result, which is among the best ever reported for nitride lasers, opens the path for the development of a new generation of high power laser diodes.

Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy

One of the most promising methods of obtaining nonpolar GaN substrates is regrowth of thick GaN crystals using hydride vapor phase epitaxy (HVPE). The multistep growth was performed along the c polar direction. After HVPE depositions, the crystal was sliced along (1120) nonpolar planes. On such samples, we performed structural high-resolution X-ray characterization. The full width at half maximum of the X-ray rocking curves for the 1120 reflection achieved 27 arcsec. The interfaces between each regrowth step were clearly visible in cathodoluminescence (CL), due to different concentrations of residual dopants before and after a regrowth step.