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Featured researches published by G. Paasch.


Solid State Communications | 1987

Subband structure calculation for inversion layers in InAs and InP

H. Übensee; G. Paasch; G. Gobsch

Abstract The complete electronic subband structure of n-inversion layers of InAs- and InP-MIS systems is calculated using a new approximate self-consistent method. Remarkable agreement with recently published experimental results is obtained if the non-parabolicity of the conduction band is taken into account. Landau levels are calculated also for InP accounting for the non-parabolicity.


Solid State Communications | 1988

Theoretical analyses of the Shubnikov-de Haas oscillation in InSb inversion layers

G. Gobsch; G. Paasch; D. Schulze; S. Handschack; T. Fiedler

Abstract A calculation is presented of the subband and Landau energy levels in inversion layers adjacent to grain boundaries in InSb bicrystals. Within a rather simplified model the transverse magnetoresistance is calculated and compared with recent experiments. Some unexpected new features in the Shubnikov-de Haas oscillations are related to the occupation of several electric subbands.


Physica Status Solidi B-basic Solid State Physics | 1983

Carrier Density near the Semiconductor-Insulator Interface. Local Density Approximation for Non-Isotropic Effective Mass

G. Paasch; H. Übensee


Physica Status Solidi B-basic Solid State Physics | 1983

Quasi‐Classical Quantization for Potentials with an Infinite Surface Barrier. Subbands in Inversion Layers

G. Paasch; T. Fiedler; M. Klář; I. Bartoš


Physica Status Solidi B-basic Solid State Physics | 1985

Self-Consistent Theory of the Electronic Structure of Inversion Layers. I. A New Method Using the Modified Local Density Approximation

H. Übensee; G. Paasch; J.‐P. Zöllner; Th. Fiedler; G. Gobsch


Physica Status Solidi B-basic Solid State Physics | 1986

A novel self-consistent theory of the electronic structure of inversion layers in InSb MIS structures

J.‐P. Zöllner; H. Übensee; G. Paasch; T. Fiedler; G. Gobsch


Physica Status Solidi B-basic Solid State Physics | 1986

Self-consistent calculation of the electronic structure of n-inversion layers adjacent to the grain boundary in InSb bicrystals

G. Gobsch; G. Paasch; H. Übensee


Physical Review B | 1989

Modified Thomas-Fermi theory for depletion and accumulation layers in n-type GaAs.

H. Übensee; G. Paasch; J.‐P. Zöllner


Physica Status Solidi B-basic Solid State Physics | 1988

Modified Thomas‐Fermi Approximation for Accumulation Layers in MIS Structures

H. Übensee; G. Paasch; J.‐P. Zöllner; S. Handschack


Physica Status Solidi B-basic Solid State Physics | 1986

Self‐consistent theory of the electronic structure of inversion layers. II. Quantum effects and the electronic properties of MIS structures

H. Übensee; G. Paasch; J.‐P. Zöllner

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G. Gobsch

Technische Hochschule

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R. Herrmann

Humboldt University of Berlin

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W. Kraak

Humboldt University of Berlin

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I. Bartoš

Czechoslovak Academy of Sciences

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G. Nachtwei

Humboldt University of Berlin

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H. Krüger

Humboldt University of Berlin

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