G. Pirio

Uniform patterned growth of carbon nanotubes without surface carbon

In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition (PECVD) of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform arrays of nanotubes and single free-standing aligned nanotubes at precise locations. In the PECVD process, however, detrimental amorphous carbon (a-C) is also deposited over regions of the substrate surface where the catalyst is absent. Here, we show, using depth-resolved Auger electron spectroscopy, that by employing a suitable deposition (acetylene, C2H2) to etching (ammonia, NH3) gas ratio, it is possible to obtain nanotube growth without the presence of a-C on the substrate surface.

Field emission from dense, sparse, and patterned arrays of carbon nanofibers

We compare the field emission characteristics of dense (109 nanofibers/cm2), sparse (107 nanofibers/cm2), and patterned arrays (106 nanofibers/cm2) of vertically aligned carbon nanofibers on silicon substrates. The carbon nanofibers were prepared using plasma-enhanced chemical vapor deposition of acetylene and ammonia gases in the presence of a nickel catalyst. We demonstrate how the density of carbon nanofibers can be varied by reducing the deposition yield through nickel interaction with a diffusion layer or by direct lithographic patterning of the nickel catalyst to precisely position each nanofiber. The patterned array of individual vertically aligned nanofibers had the most desirable field emission characteristics, highest apparent field enhancement factor, and emission site density.

Plasma enhanced chemical vapour deposition carbon nanotubes/nanofibres - How uniform do they grow?

The ability to grow carbon nanotubes/nanofibres (CNs) with a high degree of uniformity is desirable in many applications. In this paper, the structural uniformity of CNs produced by plasma enhanced chemical vapour deposition is evaluated for field emission applications. When single isolated CNs were deposited using this technology, the structures exhibited remarkable uniformity in terms of diameter and height (standard deviations were 4.1 and 6.3% respectively of the average diameter and height). The lithographic conditions to achieve a high yield of single CNs are also discussed. Using the height and diameter uniformity statistics, we show that it is indeed possible to accurately predict the average field enhancement factor and the distribution of enhancement factors of the structures, which was confirmed by electrical emission measurements on individual CNs in an array.

Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode

We report on the fabrication of field emission microcathodes which use carbon nanotubes as the field emission source. The devices incorporated an integrated gate electrode in order to achieve truly low-voltage field emission. A single-mask, self-aligned technique was used to pattern the gate, insulator and catalyst for nanotube growth. Vertically-aligned carbon nanotubes were then grown inside the gated structure by plasma-enhanced chemical vapour deposition. Our self-aligned fabrication process ensured that the nanotubes were always centred with respect to the gate apertures (2 µm diameter) over the entire device. In order to obtain reproducible emission characteristics and to avoid degradation of the device, it was necessary to operate the gate in a pulsed voltage mode with a low duty cycle. The field emission device exhibited an initial turn-on voltage of 9 V. After the first measurements, the turn-on voltage shifted to 15 V, and a peak current density of 0.6 mA cm-2 at 40 V was achieved, using a duty cycle of 0.5%.

Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system

This article presents an overview of the “Nanolith” parallel electron-beam (e-beam) lithography approach. The e-beam writing head consists of an array of microguns independently driven by an active matrix complementary metal–oxide–semiconductor circuit. At the heart of each microgun is a field-emission microcathode comprised of an extraction gate and vertical carbon nanotube emitter, whose mutual alignment is critical in order to achieve highly focused electron beams. Thus, in this work, a single-mask, self-aligned technique is developed to pattern the extraction gate, insulator, and nanotubes in the microcathode. The microcathode examined here (150×150 gates, 2 μm gate diameter, with multiple nanotubes per gate) exhibited a peak current of 10.5 μA at 48 V when operated with a duty cycle of 0.5%. The self-aligned process was extended to demonstrate the fabrication of single nanotube-based microcathodes with submicron gates.

Characterization of plasma-enhanced chemical vapor deposition carbon nanotubes by Auger electron spectroscopy

Plasma-enhanced chemical vapor deposition (PECVD) is a versatile technique for growing well-aligned, precisely patterned, multiwalled carbon nanotubes directly on substrates. We report on the characterization of PECVD deposited nanotubes using Auger Electron Spectroscopy (AES); we believe that this is the first comprehensive AES study of nanotubes and the effect of the deposition process on the substrate. The nanotubes contained well-crystallized graphitic carbon, in contrast to the amorphous/disordered carbon byproduct which is condensed on the substrate surface. By adjusting the deposition gas ratios, we show, using depth-profiled composition analysis, that it is possible to eliminate the unwanted amorphous carbon on the substrate surface. However, a 5 nm interfacial layer, which contained the plasma species, was always present on the substrate surface due to its exposure to the plasma. We could prevent the formation of this interfacial layer by shielding areas of the substrate from the plasma to achiev...

Electron emission from arrays of carbon nanotubes/fibres ☆

Abstract The overall aim of this work is to produce arrays of field emitting microguns, based on carbon nanotubes, which can be utilised in the manufacture of large area field emitting displays, parallel e-beam lithography systems and electron sources for high frequency amplifiers. This paper will describe the work carried out to produce patterned arrays of aligned multiwall carbon nanotubes (MWCNTs) using a dc plasma technique and a Ni catalyst. We will discuss how the density of the carbon nanotube/fibres can be varied by reducing the deposition yield through nickel interaction with a diffusion layer or by direct lithographic patterning of the Ni catalyst to precisely define the position of each nanotube/fibre. Details of the field emission behaviour of the different arrays of MWCNTS will also be presented.

Investigating carbon materials for use as the electron emission source in a parallel electron-beam lithography system

Abstract A microelectronic parallel electron-beam lithography system using an array of field emitting microguns is currently being developed. This paper investigates the suitability of various carbon based materials for the electron source in this device, namely tetrahedrally bonded amorphous carbon (ta-C), nanoclustered carbon and carbon nanotubes. Ta-C was most easily integrated into a gated field emitter structure and various methods, such as plasma and heavy ion irradiation, were used to induce emission sites in the ta-C. However, the creation of such emission sites at desired locations appeared to be difficult/random in nature and thus the material was unsuitable for this application. In contrast, nanoclustered carbon material readily field emits with a high site density but the by-products from the deposition process create integration issues when using the material in a microelectronic gated structure. Carbon nanotubes are currently the most promising candidate for use as the emission source. We have developed a high yield and clean (amorphous carbon by-product free) PECVD process to deposit single free standing nanotubes at desired locations with exceptional uniformity in terms of nanotube height and diameter. Field emission from an array of nanotubes was also obtained.

Carbon nanotubes/nanofibers for microwave amplifiers and parallel e-beam lithography

In this paper, carbon nanotubes/nanofibers for microwave amplifiers and parallel e-beam lithography have been discussed. Field emission properties of CN arrays will be presented.

Growth of aligned multiwall carbon nanotubes and the effect of adsorbates on the field emission properties

In attempt to decipher the field emission characteristics of multiwall carbon nanotubes (MWCNTs), we have developed a fabrication method based on plasma enhanced chemical vapour deposition (PECVD) to provide utmost control of the nanotube structure such as their alignment, individual position, diameter, length and morphology. We investigated the field emission properties of these nanotubes to elucidate the effect of adsorbates on the nanotubes. Our results show that although the adsorbates cause an apparent lowering of the required turn on voltage/field of the nanotubes, the adsorbates undesirably cause a saturation of the current, large temporal fluctuations in the current, and also a deviation of the emission characteristics from Fowler‐Nordheim like emission. The adsorbates are easily removed by extracting an emission current of 1 uA per nanotube or using a high applied electric field (∼25V/um).