G.S. Dow

High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodology

High-performance W-band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured noise figure of 5.1 dB with an associated gain of 7 dB from 92 to 95 GHz, and the two-stage amplifier has a measured small signal gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz with a noise figure of 5.5 dB from 91 to 95 GHz. An eight-stage LNA built by cascading four of these monolithic two-stage LNA chips demonstrates 49 dB gain and 6.5 dB noise figure at 94 GHz. A rigorous analysis procedure was incorporated in the design, including accurate active device modeling and full-wave EM analysis of passive structures. The first pass success of these LNA chip designs indicates the importance of a rigorous design/analysis methodology in millimeter-wave monolithic IC development. >

Broadband monolithic passive baluns and monolithic double-balanced mixer

The design and fabrication of four broadband monolithic passive baluns including CPW Marchand, multilayer MS Marchand, planar-transformer and broadside-coupled line baluns are presented. Operational frequencies range from 1.5 GHz to 24 GHz. Maximum relative bandwidths in excess of 3:1 are achieved. Simulated performances using full wave electromagnetic analysis are shown to agree with the measured results. Two accurate equivalent circuit models constructed from either electromagnetic simulated or measured S-parameters are developed for the MS Marchand and transformer baluns making the optimization of baluns and circuit design using the baluns much more efficient. The design of monolithic double-balanced diode mixer using two planar-transformer baluns is also presented. Without DC bias, the mixer shows a minimum conversion loss of 6 dB with the RF at 5 GHz and a LO drive of 15 dBm at 4 GHz. The measured input IP/sub 3/ of this mixer is better than 15 dBm over the 4 to 5.75 GHz frequency band. >

Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology

A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC dielectric resonator oscillator (DRO) in conjunction with a GaAs-based high electron mobility transistor (HEMT) MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBT MMICs.

A W-band single-chip transceiver for FMCW radar

A monolithic microwave integrated circuit (MMIC) chip containing a W-band voltage controlled oscillator (VCO). transmit amplifiers, a receiver low noise amplifier and a mixer is discussed. It is used as the front-end of a homodyne FMCW radar for target range and range rate sensing applications. The 6.9-mm*3.6-mm monolithic chip was fabricated using 0.1- mu m pseudomorphic InGaAs-AlGaAs-GaAs HEMT process technology. The transmitter output power is more than 10 dBm for frequencies in the range 90-94 GHz, and maximum tuning bandwidth is 500 MHz for the VO. The receiver channel has 6-dB conversion gain when the output transmitting power is 10 dBm. A compete radar system has been tested based on the single-chip MMIC front-end. The calculated range and range rate are in good agreement with the measurement data.<<ETX>>

Forward-looking automotive radar using a W-band single-chip transceiver

A prototype W-band all-weather automotive radar based on a single-chip 0.1-/spl mu/m AlGaAs-InGaAs-GaAs HEMT transceiver has been developed. This radar has the features of simple architecture and small size, with adequate performance. Owing to the maturity of HEMT MMIC technology, this radar is potentially low cost to implement in personal vehicles. The prototype radar used for autonomous intelligent cruise control in a passenger car is presented in this paper. The MMIC development, together with the radar system design, is also addressed. >

A W-band monolithic downconverter

The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The monolithic downconverter consists of a two-stage low-noise amplifier and a single-balanced mixer. The single-balanced mixer has been designed using the HEMT gate Schottky diodes inherent to the process. Measured results of the complete downconverter show conversion gain of 5.5 dB and a double-sideband noise figure of 6.7 dB at 94 GHz. Also presented is the downconverter performance characterized over the -35 degrees C to +65 degrees C temperature range. The downconverter design was a first pass success and has a high circuit yield. >

A 62-GHz monolithic InP-based HBT VCO

A monolithic V-band VCO using InP-based HBT technology has been designed, fabricated, and tested. This VCO delivers a peak output power of 4 dBm at a center frequency of 62.4 GHz with a tuning range of 300 MHz. The measured phase noise shows -78 dBc/Hz at 100 kHz offset and -104 dBc/Hz at 1 MHz offset. To our knowledge, this is the highest frequency fundamental-mode oscillator ever reported using bipolar transistors. >

A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

The authors have designed and fabricated monolithic power amplifiers using pseudomorphic InGaAs power HEMTs (high-electron-mobility transistors) with record power and gain performance at W-band frequency. The two-stage amplifier has a small-signal gain of 9 dB and can deliver 0.1-W output power with 5.9-dB associated gain and 6.6% power-added efficiency at 93.5 GHz. The successful first pass design of the W-band MMIC (monolithic microwave integrated circuit) power amplifier is due to the superior device performance and the millimeter-wave monolithic power amplifier design techniques.<<ETX>>

Novel monolithic multifunctional balanced switching low-noise amplifiers

A novel multifunctional balanced switching low-noise amplifier (BSLNA) which can be used as a low-noise amplifier, a low-noise switch, or a broad-band 180/spl deg/ phase shifter is proposed. Two monolithic BSLNAs at Ka- and W-band frequencies are demonstrated using the 0.1 /spl mu/m pseudomorphic (PM) InP- and GaAs-based HEMT technologies, respectively. Potential applications of the novel BSLNA are in on-off keying (OFK) or binary phase-shift keying (BPSK) in communication systems and input switch for Dicke-switched radiometer systems. The extensions of this BSLNA structure to be a single-pole double-throw switch and a crossbar switch to interchange two signal paths are also addressed. >

High-yield W-band monolithic HEMT low-noise amplifier and image rejection downconverter chips

High-yield W-band monolithic microwave integrated circuits (MMICs), namely, a three-stage low-noise amplifier (LNA) and a monolithic image rejection downconverter (IRD), are discussed. The LNA is used as the front end followed by an image rejection mixer (IRM). These MMICs were fabricated in the 0.1- mu m AlGaAs-InGaAs-GaAs HEMT production line. The LNA demonstrated a typical 17-dB gain and 4.5-5.5-dB noise figure at 94 GHz. The complete monolithic IRD has a measured conversion gain of 7-9 dB with a single-side-band noise figure of 6 dB when downconverting a 93-95-GHz RF signal to 50-500 MHz. The downconversion requires an LO power of 9 dBm. The development of these MMICs shows the increasing maturity of GaAs-based HEMT MMIC technology at W-band.<<ETX>>