H. Wang

High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodology

High-performance W-band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured noise figure of 5.1 dB with an associated gain of 7 dB from 92 to 95 GHz, and the two-stage amplifier has a measured small signal gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz with a noise figure of 5.5 dB from 91 to 95 GHz. An eight-stage LNA built by cascading four of these monolithic two-stage LNA chips demonstrates 49 dB gain and 6.5 dB noise figure at 94 GHz. A rigorous analysis procedure was incorporated in the design, including accurate active device modeling and full-wave EM analysis of passive structures. The first pass success of these LNA chip designs indicates the importance of a rigorous design/analysis methodology in millimeter-wave monolithic IC development. >

Broadband monolithic passive baluns and monolithic double-balanced mixer

The design and fabrication of four broadband monolithic passive baluns including CPW Marchand, multilayer MS Marchand, planar-transformer and broadside-coupled line baluns are presented. Operational frequencies range from 1.5 GHz to 24 GHz. Maximum relative bandwidths in excess of 3:1 are achieved. Simulated performances using full wave electromagnetic analysis are shown to agree with the measured results. Two accurate equivalent circuit models constructed from either electromagnetic simulated or measured S-parameters are developed for the MS Marchand and transformer baluns making the optimization of baluns and circuit design using the baluns much more efficient. The design of monolithic double-balanced diode mixer using two planar-transformer baluns is also presented. Without DC bias, the mixer shows a minimum conversion loss of 6 dB with the RF at 5 GHz and a LO drive of 15 dBm at 4 GHz. The measured input IP/sub 3/ of this mixer is better than 15 dBm over the 4 to 5.75 GHz frequency band. >

Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology

A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC dielectric resonator oscillator (DRO) in conjunction with a GaAs-based high electron mobility transistor (HEMT) MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBT MMICs.

A W-band single-chip transceiver for FMCW radar

A monolithic microwave integrated circuit (MMIC) chip containing a W-band voltage controlled oscillator (VCO). transmit amplifiers, a receiver low noise amplifier and a mixer is discussed. It is used as the front-end of a homodyne FMCW radar for target range and range rate sensing applications. The 6.9-mm*3.6-mm monolithic chip was fabricated using 0.1- mu m pseudomorphic InGaAs-AlGaAs-GaAs HEMT process technology. The transmitter output power is more than 10 dBm for frequencies in the range 90-94 GHz, and maximum tuning bandwidth is 500 MHz for the VO. The receiver channel has 6-dB conversion gain when the output transmitting power is 10 dBm. A compete radar system has been tested based on the single-chip MMIC front-end. The calculated range and range rate are in good agreement with the measurement data.<<ETX>>

A 140-GHz monolithic low noise amplifier

This paper presents the development of a 140-GHz monolithic low noise amplifier (LNA) using 0.1-/spl mu/m pseudomorphic InAlAs-InGaAs-InP low noise HEMT technology. A two-stage single-ended 140-GHz monolithic LNA has been designed, fabricated and tested. It exhibits a measured small signal gain of 9 dB at 142 GHz, and more than 5-dB gain from 138-145 GHz. This is the highest frequency monolithic amplifier ever reported using three terminal devices. >

A W-band monolithic downconverter

The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The monolithic downconverter consists of a two-stage low-noise amplifier and a single-balanced mixer. The single-balanced mixer has been designed using the HEMT gate Schottky diodes inherent to the process. Measured results of the complete downconverter show conversion gain of 5.5 dB and a double-sideband noise figure of 6.7 dB at 94 GHz. Also presented is the downconverter performance characterized over the -35 degrees C to +65 degrees C temperature range. The downconverter design was a first pass success and has a high circuit yield. >

An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz

We present the highest frequency performance of any solid-state monolithic microwave integrated circuit (MMIC) amplifier. A 2-stage 80-nm gate length InGaAs/InAlAs/InP HEMT MMIC balanced amplifier has a measured on-wafer peak gain of 7.2 dB at 190 GHz and greater than 5 dB gain from 170 to 194 GHz. The circuit was fabricated using a pseudomorphic 20-nm In/sub 0.65/Ga/sub 0.35/As channel HEMT structure grown on a 3-in InP substrate by MBE. Based on the measured circuit results, the intrinsic exhibits an F/sub max/ greater than 400 GHz.

A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

The authors have designed and fabricated monolithic power amplifiers using pseudomorphic InGaAs power HEMTs (high-electron-mobility transistors) with record power and gain performance at W-band frequency. The two-stage amplifier has a small-signal gain of 9 dB and can deliver 0.1-W output power with 5.9-dB associated gain and 6.6% power-added efficiency at 93.5 GHz. The successful first pass design of the W-band MMIC (monolithic microwave integrated circuit) power amplifier is due to the superior device performance and the millimeter-wave monolithic power amplifier design techniques.<<ETX>>

A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technology

We report the design and performance of state-of-the-art V-band MMIC LNAs using 0.1- mu m gate length pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP HEMTs. The three-stage V-band LNA demonstrated an average of 3.0 dB noise figure between 56-64 GHz with 24-25.5 dB associated gain with a noise figure of 2.7 dB measured at 62 GHz. Furthermore, the DC power dissipation of this circuit was only 19.5 mW which is less than one-third the DC power dissipation of InGaAs/AlGaAs/GaAs HEMT versions. These results demonstrate the excellent potential of InP HEMT technology for millimeter-wave and low DC power applications.<<ETX>>

A high-performance monolithic Q-band InP-based HEMT low-noise amplifier

The authors report a Q-band two-stage MMIC low-noise amplifier based on 0.1- mu m pseudomorphic InAlAs-InGaAs-InP HEMT technology. The amplifier has achieved an average noise figure of 2.3 dB with associated gain of 25 dB over the band from 43 to 46 GHz. This noise figure is the best result ever reported for a monolithic amplifier at this frequency range. In addition, this InP-based amplifier consumes only 12 mW, which is at least three times lower than a GaAs-based counterpart, indicating that InP-based pseudomorphic HEMTs are well suited for very high density monolithic integration or an application where ultra-low-power consumption is required.<<ETX>>